Scanning micromirror for optical communication systems and method of manufacturing the same

• US 6,822,776 B2
• Filed: 12/03/2002
• Issued: 11/23/2004
• Est. Priority Date: 08/13/2002
• Status: Active Grant

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Jun, Chi-Hoon, Choi, Chang-Auck, Kim, Youn Tae, Hah, Doo-Young, Ryu, Ho-Jun
• Primary Examiner(s): Phan, James
• Application Number:
  US10/308,137
• Publication Number:
  US 20040032634A1
• Time in Patent Office: 721 Days
• Field of Search: 359/223, 359/224, 359/198-199, 359/900, 310/309, 735/041.2, 735/041.4, 735/041.6
• US Class Current: 359/199.2
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: G02B 6/3518 the reflective optical element being an intrinsic part of a MEMS device, i.e. fabricated together with the MEMS device MEMS devices in general B81B; manufacture of MEM devices in general B81C; micromechanical devices controlling the direction of light G02B26/0833
• CPC Class Codes: G02B 6/3556 NxM switch, i.e. regular arrays of switches elements of matrix type constellation
• CPC Class Codes: G02B 6/357 Electrostatic force electrostatic forces controlling reflecting elements in general G02B26/0841
• CPC Class Codes: G02B 6/3584 constructional details of an associated actuator having a MEMS construction, i.e. constructed using semiconductor technology such as etching MEMS per se B81B, B81C
• CPC Class Codes: Y10S 359/90 Methods

Abstract

The present invention relates to a scanning micromirror for optical communications. The scanning micromirror comprises an outer frame having an aperture therein, an inner frame located within the aperture of the outer frame and having an aperture therein, an optical reflecting means located within the aperture of the inner frame, a plurality of first torsion springs connected between an inner wall of the outer frame and an outer wall of the inner frame, for supporting the inner frame, a plurality of second torsion springs connected between the inner wall of the inner frame and the optical reflecting means, for supporting the optical reflecting means, first comb-type electrostatic actuators for applying electrostatic torque by which the inner frame is rotated about an axis of the first torsion springs, and second comb-type electrostatic actuators for applying electrostatic torque by which the optical reflecting means is rotated about an axis of the second torsion springs. Therefore, as the present invention uses vertical comb-type electrostatic actuators, an available rotation angle can be made large compared to a conventional case using a parallel-plate type electrostatic actuator. As the vertical asymmetry of the fixed combs and the movable combs are large, a large rotation angle can be obtained in non-resonant mode as well as resonant mode.

Claims

1. A scanning micromirror for optical communications, comprising:

an outer frame having an aperture therein;

an inner frame located within the aperture of the outer frame and having an aperture therein;

an optical reflecting means located within the aperture of the inner frame;

a plurality of first torsion springs connected between an inner wall of the outer frame and an outer wall of the inner frame, for supporting the inner frame;

a plurality of second torsion springs connected between the inner wall of the inner frame and the optical reflecting means, for supporting the optical reflecting means;

a pair of first comb-type electrostatic actuators electrically isolated from each other for applying electrostatic torques by which the inner frame is rotated bi-directionally about an axis of the first torsion springs; and

a pair of second comb-type electrostatic actuators electrically isolated from each other for applying electrostatic torques by which the optical reflecting means is rotated bi-directionally about an axis of the second torsion springs.

2. The scanning micromirror for optical communications as claimed in claim 1, wherein the plane of the optical reflecting means is rectangular, hexagonal, octagonal, circular or oval.

3. The scanning micromirror for optical communications as claimed in claim 1, wherein the plurality of first torsion springs and the plurality of second torsion springs have a straight line type, a longitudinal meander type, a transversal meander type, or a mixed type of the longitudinal meander type and the transversal meander type.

4. The scanning micromirror for optical communications as claimed in claim 1, wherein the plurality of the first torsion springs and the plurality of the second torsion springs are positioned perpendicularly to each other.

5. The scanning micromirror for optical communications as claimed in claim 1, wherein the pair of first comb-type electrostatic actuators include first fixed combs of which one ends are connected to the inner wall of the outer frame and the other ends are free, and first movable combs of which one ends are connected to the outer wall of the inner frame and other ends are free, wherein the first movable combs are interdigitated with the first fixed combs.

6. The scanning micromirror for optical communications as claimed in claim 1, wherein the pair of second comb-type electrostatic actuators include second fixed combs of which one ends are connected to the inner wall of the inner frame and the other ends are free, and second movable combs of which one ends are connected to the optical reflecting means and the other ends are free, wherein the second movable combs are interdigitated with the second fixed combs.

7. A method of manufacturing a scanning micromirror for optical communications, comprising the steps of:

(a) forming a first upper silicon dioxide layer and a lower silicon dioxide layer on both sides of a silicon-on-insulator (SOI) wafer comprising a handling silicon layer, a buried silicon dioxide layer and a silicon device layer;

(b) depositing a polysilicon layer on the first upper silicon dioxide layer and then patterning the polysilicon layer using a mask that defines first fixed combs, second fixed combs, first torsion springs, an outer frame and a portion of an inner frame to which the second fixed combs are connected;

(c) depositing a second upper silicon dioxide layer on the entire structure and then patterning the second upper silicon dioxide layer and the first upper silicon dioxide layer using a mask that defines the remaining polysilicon layer, first movable combs, second movable combs, an optical reflecting means, second torsion springs and a portion of the inner frame to which the first movable combs are connected;

(d) patterning the lower silicon dioxide layer using a mask that defines a portion in which the handling layer is thinned down to have a given thickness;

(e) etching the silicon device layer using the first upper silicon dioxide layer as a mask;

(f) removing the second upper silicon dioxide layer, etching the first upper silicon dioxide layer using the remaining polysilicon layer as a mask and then etching the buried silicon dioxide layer using the silicon device layer as a mask;

(g) etching the handling silicon layer using the lower silicon dioxide layer as a mask, so that the handling silicon layer has a given thickness;

(h) removing the polysilicon layer, etching the silicon device layer using the first upper silicon dioxide layer remaining below the polysilicon layer as a mask and then etching the handling silicon layer using the buried silicon dioxide layer as a mask; and

(i) removing the first upper silicon dioxide layer and the lower silicon dioxide layer, removing the buried silicon dioxide layer using the remaining silicon device layer as a mask and then depositing a metal layer on upper surface and lower surface of the entire structure.

8. The method as claimed in claim 7, wherein in the step (a), the thickness of the handling silicon layer is 100 μ

m˜

1000 μ

m, the thickness of the buried silicon dioxide layer is 0.5 μ

m˜

10 μ

m and the thickness of the silicon device layer is 1 μ

m˜

500 μ

m.

9. The method as claimed in claim 7, wherein the thickness of the first upper silicon dioxide layer and the second upper silicon dioxide layer is 0.1 μ

m˜

10 μ

m and the thickness of the polysilicon layer is 0.1 μ

m˜

10 μ

m.

10. The method as claimed in claim 7, wherein in the step (g), a given thickness of the handling silicon layer is 1 μ

m˜

500 μ

m.

11. The method as claimed in claim 7, wherein in the step (i), the metal layer is made of any one of gold, aluminum, copper, platinum, chrome, titanium, titanium-tungsten, and nickel, or a combination of a part of the above metals, and the entire thickness of the metal layer is 10 μ

m˜

5 μ

m.