Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element

• US 6,822,988 B1
• Filed: 09/11/2000
• Issued: 11/23/2004
• Est. Priority Date: 09/10/1999
• Status: Expired due to Fees

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Inventors: Fukunaga, Toshiaki, Okazaki, Yoji
• Primary Examiner(s): Jackson, Jerome
• Assistant Examiner(s): NGUYEN, JOSEPH H
• Application Number:
  US09/659,456
• Time in Patent Office: 1,534 Days
• Field of Search: 372/75, 372/50, 372/38.06, 372/43, 372/33, 372/34, 372/45, 372/46, 372/92, 372/12, 372/71, 372/95, 345/89, 257/19
• US Class Current: 372/38.06
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/02326 Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
• CPC Class Codes: H01S 5/028 Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
• CPC Class Codes: H01S 5/041 Optical pumping
• CPC Class Codes: H01S 5/141 using a wavelength selective device, e.g. a grating or etalon H01S5/146 takes precedence
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/2009 by using electron barrier layers
• CPC Class Codes: H01S 5/3086 doping of the active layer
• CPC Class Codes: H01S 5/3216 quantum well or superlattice cladding layers
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A laser apparatus includes a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light; and a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with the first laser light, and emitting second laser light. In addition, the surface-emitting semiconductor element may have a first mirror arranged on one side of the second active layer, and a second mirror may be arranged outside the surface-emitting semiconductor element so that the first and second mirrors form a resonator.

Claims

1. A laser apparatus comprising:

a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light; and

a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with said first laser light, and emitting second laser light.

2. A laser apparatus according to claim 1, wherein said second active layer includes a plurality of quantum wells.

3. A laser apparatus according to claim 2, wherein said second active layer includes twenty or more quantum wells.

4. A laser apparatus according to claim 1, wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.

5. A laser apparatus according to claim 4, wherein said second active layer includes a plurality of quantum wells.

6. A laser apparatus according to claim 5, wherein said second active layer includes twenty or more quantum wells.

7. A laser apparatus according to claim 1, wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.

8. A laser apparatus according to claim 7, wherein said second active layer includes a plurality of quantum wells.

9. A laser apparatus according to claim 8, wherein said second active layer includes twenty or more quantum wells.

10. A laser apparatus according to claim 1, wherein the semiconductor laser element is a broad area type semiconductor laser element having output power substantially in a range of 1 to 10 watts and the laser apparatus generates output power up to several watts in a stable fundamental transverse mode.

11. A laser apparatus according to claim 1, wherein the GaN-based compound in the first active layer of the semiconductor laser element is an InGaN material for emitting an excitation light in the 410 nm band, the surface-emitting semiconductor element further comprises a GaN substrate, and the first laser light is supplied to the surface-emitting semiconductor laser element through the GaN substrate.

12. A laser apparatus comprising:

a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light;

a surface-emitting semiconductor element being excited with said first laser light, emits second laser light, and having a second active layer made of a GaN-based compound and a first mirror arranged on one side of said second active layer; and

a second mirror arranged outside said surface-emitting semiconductor element so that said first and second mirrors form a resonator.

13. A laser apparatus according to claim 12, wherein said second active layer includes a plurality of quantum wells.

14. A laser apparatus according to claim 13, wherein said second active layer includes twenty or more quantum wells.

15. A laser apparatus according to claim 12, wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.

16. A laser apparatus according to claim 15, wherein said second active layer includes a plurality of quantum wells.

17. A laser apparatus according to claim 16, wherein said second active layer includes twenty or more quantum wells.

18. A laser apparatus according to claim 12, wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.

19. A laser apparatus according to claim 18, wherein said second active layer includes a plurality of quantum wells.

20. A laser apparatus according to claim 19, wherein said second active layer includes twenty or more quantum wells.

21. A laser apparatus according to claim 12, wherein the semiconductor laser element is a broad area type semiconductor laser element having output power substantially in a range of 1 to 10 watts and the laser apparatus generates output power up to several watts in a stable fundamental transverse mode.

22. A laser apparatus according to claim 12, wherein the GaN-based compound in the first active layer of the semiconductor laser element is an InGaN material for emitting an excitation light in the 410 nm band, the surface-emitting semiconductor element further comprises a GaN substrate, and the first laser light is supplied to the surface-emitting semiconductor laser element through the GaN substrate.