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Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element

  • US 6,822,988 B1
  • Filed: 09/11/2000
  • Issued: 11/23/2004
  • Est. Priority Date: 09/10/1999
  • Status: Expired due to Fees
First Claim
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1. A laser apparatus comprising:

  • a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light; and

    a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with said first laser light, and emitting second laser light.

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