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Method of improving the quality of defective semiconductor material

  • US 6,825,102 B1
  • Filed: 09/18/2003
  • Issued: 11/30/2004
  • Est. Priority Date: 09/18/2003
  • Status: Expired due to Fees
First Claim
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1. A method of improving the material quality of a defective semiconductor crystal material comprising the steps of:

  • amorphizing, partially or completely, a region of a defective semiconductor crystal material to form an amorphized region, said defective semiconductor crystal material comprising a heterostructure containing epitaxial growth-related defects and said amorphized region does not extend to a buried insulating layer within said defective semiconductor crystal material; and

    thermally treating the amorphized region to recrystallize said partially or completely amorphized region forming a recrystallized region that has a reduced defect density, in terms of said epitaxial growth-related defects, as compared to the defective semiconductor crystal material.

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