Micro-fluidic devices

• US 6,825,127 B2
• Filed: 07/24/2001
• Issued: 11/30/2004
• Est. Priority Date: 07/24/2001
• Status: Expired due to Term

• Current Assignee: Teledyne Digital Imaging, Inc. (Teledyne Technologies Incorporated)
• Original Assignee: Zarlink Semiconductor Inc. (Microchip Technology Incorporated)
• Inventors: Tyler, Heather, Ouellet, Luc
• Primary Examiner(s): Vinh, Lan
• Application Number:
  US09/910,795
• Publication Number:
  US 20030022505A1
• Time in Patent Office: 1,225 Days
• Field of Search: 438/422, 438/319, 438/700, 438/706, 438/745, 438/750, 438/424, 216/2, 216/11, 216/17
• US Class Current: 438/745
• CPC Class Codes: B81B 2201/058 Microfluidics not provided for in B81B2201/051 - B81B2201/054
• CPC Class Codes: B81B 2203/0315 Cavities
• CPC Class Codes: B81B 2203/0353 Holes
• CPC Class Codes: B81C 1/00119 Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems

Abstract

In a method of fabricating a microstructure for micro-fluidics applications, a mechanically stable support layer is formed over a layer of etchable material. An anisotropic etch is preformed through a mask to form a pattern of holes extending through the support layer into said etchable material. An isotropic etch is performed through each said hole to form a corresponding cavity in the etchable material under each hole and extending under the support layer. A further layer of depositable material is formed over the support layer until portions of the depositable layer overhanging each said hole meet and thereby close the cavity formed under each hole. The invention permits the formation of micro-channels and filters of varying configuration.

Claims

1. A method of fabricating a microstructure for micro-fluidics applications, comprising the steps of:

forming a layer of etchable material on a substrate;

forming a mechanically stable support layer over said etchable material;

performing an anisotropic etch through a mask to form a pattern of holes extending through said support layer to said etchable material and lving along a projected oath of a continuous micro-channel to be formed within said etchable material,

performing an isotropic etch through each said hole to form a corresponding cavity in said etchable material under each said hole, said corresponding cavity extending under said support layer to communicate with an adjacent said cavity whereby a series of said communicating cavities form said micro-channel; and

forming a further layer of depositable material over said support layer until overhanging portions of said depositable layer meet to close each said hole.

2. A method as claimed in claim 1, wherein the distance between neighboring holes lies in the range 0.8 μ

m to 10.0 μ

m.

3. A method as claimed in claim 1, wherein the distance between neighboring holes is about 2.0 μ

m.

4. A method as claimed in claim 1, wherein said pattern is T-shaped and said isotropic etch results in a T-shaped micro-channel.

5. A method as claimed in claim 1, wherein said pattern is cross-shaped and said isotropic etch results in intersecting micro-channels.

6. A method as claimed in claim 1, wherein said pattern is V-shaped and said isotropic etch results in micro-channel splitter.

7. A method as claimed in claim 1, wherein said pattern of holes is in the form of an array with a narrow portion and a wide portion, and said isotropic etch results in micro-channel that widens out from a narrow portion to a wide portion.

8. A method as claimed in claim 1, wherein the hole size lies in the range 0.3 μ

m to 5.0 μ

m.

9. A method as claimed in claim 8, wherein the hole size is about 0.8 μ

m.

10. A method as claimed in claim 1, wherein a sacrificial layer is deposited on top of said support layer prior to performing said anisotropic etch.

11. A method as claimed in claim 10, wherein each said sacrificial layer is removed by etching at least in the vicinity of the micro-channel after formation of said micro-channel.

12. A method as claimed in claim 1, wherein said layer of etchable material is deposited onto a substrate containing an active device.

13. A method as claimed in claim 12, wherein said active device is a CMOS device.

14. A method as claimed in claim 1, wherein said layer of etchable material is SiO₂.

15. A method as claimed in claim 14, wherein said layer of etchable material is deposited by PECVD.

16. A method as claimed in claim 14, wherein said support layer is made of Si₃N₄.

17. A method as claimed in claim 16, wherein a sacrificial layer is deposited under said support layer prior to deposition of said support layer.

18. A method as claimed in claim 16, wherein said depositable material is SiO₂, and said support layer is Si₃N₄.

19. A method of fabricating a microstructure for micro-fluidics applications, comprising the steps of:

forming a layer of etchable material on a substrate;

forming a first sacrificial layer on said etchable material;

forming a mechanically stable support layer on said first sacrificial layer;

forming a second sacrificial layer on said support layer;

providing a mask;

performing an anisotropic etch through said mask to form a pattern of holes extending through said support layer into said etchable material, said holes being separated from each other by a predetermined distance;

performing an isotropic etch through each said hole to form a corresponding cavity in said etchable material under each said hole and extending under said support layer;

removing each of said first and second sacrificial layers to expose said support layer; and

forming a further layer of depositable material over said support layer until portions of said depositable layer overhanging each said hole meet and thereby close the cavity formed under each said hole.

20. A method as claimed in claim 19, wherein said holes are arranged in a pattern along the path of a projected micro-channel and said cavities overlap to form said micro-channel.

21. A method as claimed in claim 19, wherein said predetermined distance is selected such that said cavities do not overlap in order to leave pillars therebetween.

22. A method as claimed in claim 19, wherein said further layer of depositable material is SiO₂.

23. A method as claimed in claim 22, wherein said further layer is deposited by PECVD.

24. A method as claimed in claim 19, wherein a further sacrificial layer is deposited after forming said holes and prior performing said isotropic etch to form sidewall spacers for said holes.

25. A Method as claimed in claim 24, wherein said sacrificial layers are TiN.

26. A method as claimed in claim 25, wherein said TiN is deposited by CRPVD.

27. A method of fabricating a microstructure for micro-fluidics applications, comprising the steps of:

forming a layer of etchable material on a substrate;

forming a mechanically stable support layer over said layer of etchable material;

forming a sacrificial layer over said support layer to protect said support layer during a subsequent isotropic etch;

forming a pattern of holes in said mechanically stable support layer;

performing said isotropic etch through each said hole to form a corresponding cavity in said etchable material under each said hole and extending under said support layer;

removing said sacrificial layer at least in the vicinity of said holes; and

forming a further layer of depositable material over said support layer until portions of said depositable layer overhanging each said hole meet and thereby close the cavity formed under each said hole.

28. A method as claimed in claim 27, wherein said pattern of holes is arranged along a projected path of a micro-channel and said cavities overlap to form said micro-channel.

29. A method as claimed in claim 28, wherein said further layer of depositable material is SiO₂ deposited by PECVD.