Method and apparatus for photomixing
First Claim
1. A method of determining the phase and/or amplitude information of an electromagnetic wavein which an electromagnetic wave is radiated onto the surface of a photonic mixing element having at least one pixel, wherein the pixel has at least two light-sensitive modulation photogates Gam and Gbm and associated accumulation gates Ga and Gb, in which there are applied to the modulation photogates Gam and Gbm modulation photogate voltages Uam(t) and Ubm(t) which are in the form of Uam(t)=Uo+Um(t) and Ubm(t)=Uo−
- Um(t), wherein Uo represents a bias voltage of the accumulation gates Ga and Gb, wherein applied to the accumulation gates Ga and Gb is a dc voltage whose magnitude is at least as great as the magnitude of the sum of Uo and the amplitude of the modulation voltage Um(t), in which charge carriers produced in a space charge zone of the modulation photogates Gam and Gbm by the electromagnetic wave are exposed to a potential gradient of a drift field in dependence on the polarity of the modulation photogate voltages Uam(t) and Ubm(t) and drift to the corresponding accumulation gate Ga and Gb, and in which charges qa and qb which have drifted to the respective accumulation gates Ga and Gb are taken off.
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Abstract
A method and corresponding device for determining the phase- and/or amplitude data of an electromagnetic wave. In order to bring about the spatial depth resolution of the image data obtained, the method according to the invention comprises the following steps: an electromagnetic wave is beamed onto the surface of a photonic mixed element comprising at least one pixel, the pixel having at least two light-sensitive modulation light gates Gam and Gbm and associated accumulation gates Ga and Gb; modulation light gate voltages Uam(t) and Ubm(t), which are configured as Uam(t)=Uo+Um(t) and Ubm(t)=Uo−Um(t), are applied to the modulation light gates Gam and Gbm; a direct voltage, whose magnitude is at least the same as that of the total of Uo and the amplitude of the modulation voltage Um(t), is applied to the accumulation gates Ga and Gb; the charge carriers produced in the space charge region of the modulation light gates Gam and Gbm by the incident electromagnetic wave are subjected, as a function of the polarity of the modulation light gate voltages Uam(t) and Ubm(t), to the potential gradient of a drift field and drift to the corresponding accumulation gate Ga or Gb; and the charges qa and qb which have drifted to the accumulation gates Ga and Gb, respectively, are diverted. The corresponding photonic mixed element has at least one pixel which comprises at least two light-sensitive modulation light gates (Gam, Gbm) and accumulation gates (Ga, Gb) which are associated with the modulation light gates and are partitioned with respect to the incident electromagnetic wave. A plurality of photonic mixed elements can be assembled to form an array.
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Citations
43 Claims
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1. A method of determining the phase and/or amplitude information of an electromagnetic wave
in which an electromagnetic wave is radiated onto the surface of a photonic mixing element having at least one pixel, wherein the pixel has at least two light-sensitive modulation photogates Gam and Gbm and associated accumulation gates Ga and Gb, in which there are applied to the modulation photogates Gam and Gbm modulation photogate voltages Uam(t) and Ubm(t) which are in the form of Uam(t)=Uo+Um(t) and Ubm(t)=Uo− - Um(t), wherein Uo represents a bias voltage of the accumulation gates Ga and Gb,
wherein applied to the accumulation gates Ga and Gb is a dc voltage whose magnitude is at least as great as the magnitude of the sum of Uo and the amplitude of the modulation voltage Um(t), in which charge carriers produced in a space charge zone of the modulation photogates Gam and Gbm by the electromagnetic wave are exposed to a potential gradient of a drift field in dependence on the polarity of the modulation photogate voltages Uam(t) and Ubm(t) and drift to the corresponding accumulation gate Ga and Gb, and in which charges qa and qb which have drifted to the respective accumulation gates Ga and Gb are taken off. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
in which the electromagnetic wave is irradiated by a transmitter, in which the electromagnetic wave reflected by an object is radiated onto the surface of the photonic mixing element, in which the modulation photogate voltages Uam(t) and Ubm(t) are in fixed phase relationship with the phase of the electromagnetic wave irradiated by the transmitter, and in which the charge carriers produced are additionally exposed to the potential gradient of a drift field in dependence on the phase of push-pull modulation photogate voltages Uam(t) and Ubm(t). -
3. A method according to claim 2
in which for two different phase shifts Δ - φ
1 and Δ
φ
2 of the modulation photogate voltages Uam(t) and Ubm(t) relative to the phase of the electromagnetic wave irradiated by the transmitter and charges qa1 and qb1 as well as qa2 and qb2 are taken off and the charge differences (qa1−
qb1) and (qa2−
qb2) are formed, andin which in accordance with the equation the pixel phase φ
opt of the electromagnetic wave is determined relative to the phase of the electromagnetic wave irradiated by the transmitter and thus the transit time of the electromagnetic wave received by the pixel is determined.
- φ
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4. A method according to claim 3
in which by means of four modulation photogates Gam, Gbm, Gcm and Gdm and four associated accumulation gates Ga, Gb, Gc and Gd, for two different phase shifts Δ - φ
1 and Δ
φ
2 of the modulation photogate voltages Uam(t)=U0+Um1(t) and Ubm(t)=U0−
Um1(t) and Ucm(t)=U1+Um2(t) and Udm(t)=U1−
Um2(t) relative to the phase of the electromagnetic wave irradiated by the transmitter, at the same time charges qa, qb, qc and qd are separated and taken off, andin accordance with the equation the pixel phase φ
opt of the electromagnetic wave irradiated by the transmitter and therewith the transit time of the electromagnetic wave received by the pixel is determined.
- φ
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5. A method according to claim 2
in which the photonic mixing element has a plurality of pixels, in which at least one pixel is directly radiated with a part of the electromagnetic wave from the transmitter and in which calibration of the phase shift between the electromagnetic wave and modulation photogate voltages Uam(t) and Ubm(t) is implemented from a phase shift measured with said pixel. -
6. A method according to claim 1
in which the electromagnetic wave with independently excited, unknown intensity modulation is radiated onto the surface of the photonic mixing element, in which the modulation photogate voltages Uam(t) and Ubm(t) are produced by a tunable modulation generator, in which the charge carriers produced are additionally exposed to a potential gradient of a drift field in dependence on the phase of push-pull modulation photogate voltages Uam(t) and Ubm(t), and in which the photonic mixing element and the modulation generator form at least one phase-lock loop and the electromagnetic wave is measured in accordance with a lock-in method. -
7. A method according to claim 1 in which a continuous or discontinuous HF-modulation is used as modulation for the electromagnetic wave, and pseudo-noise modulation or chirp modulation is used as modulation for the modulation photogate voltages.
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8. A method according to claim 7 in which the modulation photogate voltage is HF-modulation and the charges qa and qb for the phase shifts Δ
- φ
=0°
/180° and
90°
/270°
are taken off.
- φ
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9. A method according to claim 8 in which the charges qc and qd are taken off.
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10. A method according to claim 1 in which a steady-state modulation is used with modulation photogate voltages Uam=Uo+Um0 and Ubm=U0−
- Um0 with a settable modulation dc voltage Um0 which is constant in respect of time and with which a difference image from the difference of the charges qa and qb is specifically weighted.
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11. A method according to claim 1 in which the charges qa and qb beneath the accumulation gates Ga and Gb are integrated and read out with a multiplex structure.
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12. A method according to claim 11 in which the charges qa and qb beneath the accumulation gates Ga and Gb are integrated and read out with a CCD-structure.
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13. A method according to claim 1 in which the accumulation gates Ga and Gb are in the form of pn-diodes, and in which the charges qa and qb are read out directly as voltage or as current.
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14. A method according to claim 13 in which the charges qc and qd are read out directly as voltage or as current.
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15. A method according to claim 13 in which the pn-diodes are blocked, low-capacitance pn-diodes.
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16. A method according to claim 13, in which the structure is made in CMOS technology.
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17. A method according to claim 13 in which the pixel phase or the pixel transit time and the pixel brightness are ascertained directly by means of an active pixel sensor structure (APS).
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18. A method according to claim 17 in which the pixel phase or the pixel transit time and the pixel brightness are selectively and/or serially read out only way of an on-chip multiplex structure.
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19. A method according to claim 1 in which brightness of the pixel is respectively evaluated as the sum of the charges of the associated accumulation gates as a grey value image.
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20. A method according to one of claims 1 to 19 characterized in that in background lighting or an external, non-modulated additional lighting, a difference between grey value images taken with and without exposure of the photonic mixing element to the electromagnetic wave is used as a correction parameter.
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21. A method according to one of claims 1 to 19 characterised in that the photonic mixing element comprises a plurality of pixels used in a linear, surface or spatial array.
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22. A method according to claim 21 characterised in that at least one of the pixels is directly radiated with a part of an intensity-modulated electromagnetic wave serving as lighting and that the measurement at said at least one pixel is used for calibration of other phases and brightness results, wherein reference pixel or pixels is or are acted upon by a transmitter with different levels of intensity or levels of intensity which can be differently set.
- Um(t), wherein Uo represents a bias voltage of the accumulation gates Ga and Gb,
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23. A photonic mixing element
with at least one pixel (1), which has at least two light-sensitive modulation photogates (Gam, Gbm) comprising terminals for and adapted to receive modulation photogate voltages Uam(t) and Ubm(t) which are in the form of Uam(t)=Uo+Um(t) and Ubm(t)=Uo− - Um(t), and
accumulation gates (Ga, Gb) which are associated with the modulation photogates (Gam, Gbm) and which are shaded relative to an incident electromagnetic wave, wherein Uo represents a bias voltage of the accumulation gates (Ga, Gb). - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
- Um(t), and
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39. Apparatus for determining phase information of an electromagnetic wave
having at least one photonic mixing element comprising: -
at least one pixel (1), which has at least two light-sensitive modulation photogates (Gam, Gbm) comprising terminals for and adapted to receive modulation photogate voltages Uam(t) and Ubm(t) which are in the form of Uam(t)=Uo+Um(t) and Ubm(t)=Uo−
Um(t),accumulation gates (Ga, Gb) which are associated with the modulation photogates (Gam, Gbm) and which are shaded relative to an incident electromagnetic wave, wherein Uo represents a bias voltage of the accumulation gates Ga and Gb, and having a modulation generator (10, 13), and having a transmitter (4) that irradiates the electromagnetic wave which is intensity-modulated by the modulation generator (10, 13) in predetermined manner, wherein the electromagnetic wave which is reflected by an object (6) is radiated onto the surface of the photonic mixing element, and wherein the modulation generator (10, 13) supplies the photonic mixing element with modulation voltages Um(t) which are in a predetermined phase relationship with respect to the phase of the electromagnetic wave that is irradiated from the transmitter. - View Dependent Claims (40, 41, 42, 43)
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Specification