Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element

• US 6,825,502 B2
• Filed: 04/17/2003
• Issued: 11/30/2004
• Est. Priority Date: 06/30/2000
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sugawara, Hideto, Okazaki, Haruhiko
• Primary Examiner(s): LIU, I JUNG
• Application Number:
  US10/417,873
• Publication Number:
  US 20030209720A1
• Time in Patent Office: 593 Days
• Field of Search: 257/79, 257/81, 257/85, 257/87, 257/91, 257/98-99
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05023 the whole internal layer protruding from the surface
• CPC Class Codes: H01L 2224/0508 being stacked
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/06102 the bonding areas being at different heights
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/1703 Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/40 : Materials therefor
• CPC Class Codes: H01L 33/405 : Reflective materials

Abstract

An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

Claims

1. A light emitting element comprising:

a substrate;

a light emitting layer formed on said substrate to emit light, wherein said light emitting layer includes a first semiconductor layer of a first conductivity type, active layer formed on said first semiconductor layer to emit the light and a second semiconductor layer of a second conductivity type formed on said active layer;

a first electrode contacting said second semiconductor layer; and

a second electrode contacting said first semiconductor layer, wherein said first electrode comprising;

an ohmic layer in ohmic contact with said second semiconductor layer;

a first barrier layer formed on said ohmic layer;

a light reflecting layer formed on said first barrier layer and comprising in a metal including Ag;

a second barrier layer formed on said light reflecting layer; and

an overcoat electrode for mounting formed on said second barrier layer;

wherein said first barrier layer comprises a material different from that of said ohmic layer and said light reflecting layer comprises a material different from that of said overcoat electrode.

2. A light emitting element comprising:

a substrate;

a light emitting layer formed on said substrate to emit light, wherein said light emitting layer includes a first semiconductor layer of a first conductivity type, active layer formed on said first semiconductor layer to emit the light and a second semiconductor layer of a second conductivity type formed on said active layer;

a first electrode contacting said second semiconductor layer; and

a second electrode contacting said first semiconductor layer, wherein said first electrode comprising;

an ohmic layer in ohmic contact with said second semiconductor layer and comprising a metal including Pt;

a first barrier layer formed on said ohmic layer, comprising a metal including Pt;

a light reflecting layer formed on said first barrier layer;

a second barrier layer formed on said light reflecting layer; and

an overcoat electrode for mounting formed on said second barrier layer,

wherein said light reflecting layer comprises a material different m that of said overcoat electrode.

3. A light emitting element comprising:

a substrate;

a light emitting layer formed on said substrate to emit light, wherein said light emitting layer includes a first semiconductor layer of a first conductivity type, an active layer formed on said first semiconductor layer to emit the light and a second semiconductor layer of a second conductivity type formed on said active layer;

a first electrode contacting said second semiconductor layer; and

a second electrode contacting said substrate, wherein said first electrode comprising;

an ohmic layer in ohmic contact with said second semiconductor layer;

a first barrier layer formed on said ohmic layer;

a light reflecting layer formed on said first barrier layer and comprising a metal including Ag;

a second barrier layer formed on said light reflecting layer; and

an overcoat electrode for mounting formed on said second barrier layer,

wherein said first barrier layer comprises a material different from that of said ohmic layer and said light reflecting layer comprises a material different from that of said overcoat electrode.

4. A light emitting element comprising:

a substrate;

a light emitting layer formed on said substrate to emit light, wherein said light emitting layer includes a first semiconductor layer of a first conductivity type, an active layer formed on said first semiconductor layer to emit the light and a second semiconductor layer of a second conductivity type formed on said active layer;

a first electrode contacting said second semiconductor layer; and

a second electrode contacting said substrate, wherein said first electrode comprising;

an ohmic layer in ohmic contact with said second semiconductor layer and comprising a metal including Pt;

a first barrier layer formed on said ohmic layer, comprising a metal including Pt;

a light reflecting layer formed on said first barrier layer;

a second barrier layer formed on said light reflecting layer; and

an overcoat electrode for mounting formed on said second barrier layer,

wherein said light reflecting layer comprises a material different from that of said overcoat electrode.