Group III nitride based flip-chip intergrated circuit and method for fabricating
First Claim
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1. A flip-chip integrated circuit, comprising:
- a circuit substrate having drive electronics on one surface;
an active semiconductor device comprising a substrate with layers of semiconductor material and a plurality of terminals, each of said terminals in electrical contact with one of said layers of semiconductor material, said active semiconductor device flip-chip mounted on said circuit substrate, at least one of said terminals in electrical contact with said drive electronics; and
at least one conductive vias through said circuit substrate, each of said conductive vias in electrical contact with one of said plurality of terminals.
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Abstract
A flip-chip integrated circuit includes a circuit substrate having electronic components. The circuit substrate typically includes GaAs or Si. Another substrate can include Group III nitride based active semiconductor devices. This substrate typically includes SiC and can be separated to provide individual nitride devices. After separation, one or more of the Group III devices can be flip-chip mounted onto the circuit substrate. The electronic components on the circuit substrate can be coupled to the nitride devices using conductive interconnects and/or vias.
56 Citations
18 Claims
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1. A flip-chip integrated circuit, comprising:
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a circuit substrate having drive electronics on one surface;
an active semiconductor device comprising a substrate with layers of semiconductor material and a plurality of terminals, each of said terminals in electrical contact with one of said layers of semiconductor material, said active semiconductor device flip-chip mounted on said circuit substrate, at least one of said terminals in electrical contact with said drive electronics; and
at least one conductive vias through said circuit substrate, each of said conductive vias in electrical contact with one of said plurality of terminals. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A flip-chip integrated circuit, comprising:
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a circuit substrate having drive electronics on one surface;
an active semiconductor device comprising a substrate with layers of semiconductor material and a plurality of terminals, each of said terminals in electrical contact with one of said layers of semiconductor material, said active semiconductor device flip-chip mounted on said circuit substrate, at least one of said terminals in electrical contact with said drive electronics;
a second layer of conductive material on the surface of said circuit substrate opposite said drive electronics; and
at least one heat sink base plate to help dissipate heat from said active semiconductor device and drive electronics, wherein said at least one heat sink base plate comprises a heat sink base plate arranged adjacent to said second conductive layer. - View Dependent Claims (12)
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13. A flip-chip integrated circuit, comprising:
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a high electron mobility transistor (HEMT) comprising;
a substrate;
a high resistivity semiconductor layer on said substrate;
a barrier semiconductor layer on said high resistivity layer, said barrier layer having a wider bandgap than said high resistivity layer;
a two-dimensional electron gas between said barrier layer and said high resistivity layer;
respective source and drain contacts on said high resistivity layer and contacting said barrier layer;
a gate contact on said barrier semiconductor layer; and
a circuit substrate comprising drive electronics on one surface and a conductive vias, said HEMT flip-chip mounted on said circuit substrate with said source contact in electrical contact with said conductive vias, and said gate and drain contacts in electrical contact with said drive electronics. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification