High-frequency semiconductor device
First Claim
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1. A high-frequency semiconductor device comprising:
- an antenna-ground plane provided above a semiconductor substrate, to be connected to a ground potential;
a patch electrode provided on said antenna-ground plane with an interlayer insulation film therebetween;
an antenna connection provided under said antenna-ground plane and connected to said patch electrode via a through-hole formed passing through said antenna-ground plane; and
a line conductor provided on said antenna-ground plane with an interlayer insulation film therebetween, said line conductor forming a high-frequency transmission line together with said antenna-ground plane, wherein said antenna-ground plane is provided on a substantially entire surface of said semiconductor substrate.
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Abstract
A structure for eliminating the influence of an antenna line connected to the patch electrode on the antenna characteristics of a patch antenna built in an MMIC is disclosed. A through-hole is formed in the antenna ground plane which is provided under the patch electrode with an interlayer insulation film therebetween, the antena line is provided in the side opposite to the patch electrode with respect to the antena ground plane, and the patch electrode and antenna line are connected to each other with a conductor passing through the trough-hole.
20 Citations
21 Claims
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1. A high-frequency semiconductor device comprising:
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an antenna-ground plane provided above a semiconductor substrate, to be connected to a ground potential;
a patch electrode provided on said antenna-ground plane with an interlayer insulation film therebetween;
an antenna connection provided under said antenna-ground plane and connected to said patch electrode via a through-hole formed passing through said antenna-ground plane; and
a line conductor provided on said antenna-ground plane with an interlayer insulation film therebetween, said line conductor forming a high-frequency transmission line together with said antenna-ground plane, wherein said antenna-ground plane is provided on a substantially entire surface of said semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A high-frequency semiconductor device comprising:
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an antenna-ground plane provided above a semiconductor substrate, to be connected to a ground potential;
a patch electrode provided on said antenna-ground plane with an interlayer insulation film therebetween;
an antenna connection provided under said antenna-ground plane and connected to said patch electrode via a through-hole formed passing through said antenna-ground plane; and
a line conductor provided on said antenna-ground plane with an interlayer insulation film therebetween, said line conductor forming a high-frequency transmission line together with said antenna-ground plane, wherein said antenna-ground plane is formed to extend to up to a region in which said antenna-ground plane has no longer any effect for antenna functions, and said line conductor is provided on said antenna-ground plane in said region. - View Dependent Claims (10, 11, 12, 13, 14, 15)
a ground plate provided between said antenna-ground plane and said semiconductor substrate and under said antenna connection, said ground plate being formed to extend over a substantially entire surface of said semiconductor substrate and to be connected to a ground potential; and
another line conductor provided on said ground plate with an interlayer insulation film therebetween, said another line conductor forming a high-frequency transmission line together with said ground plate.
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11. A high-frequency semiconductor device as set forth in claim 9, further comprising a passive device provided under said antenna-ground plane, said passive device being any one of line conductors, capacitors, inductors or resistors.
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12. A high-frequency semiconductor device as set forth in claim 9, wherein said antenna connection is an antenna line of a patterned conductor.
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13. A high-frequency semiconductor device as set forth in claim 9, wherein said interlayer insulation film is composed of a resin insulating material.
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14. A high-frequency semiconductor device as set forth in claim 13, wherein said resin insulating material is a polyimide or benzocyclobutene.
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15. A high-frequency semiconductor device as set forth in claim 9, wherein said patch electrode has a rectangular shape or a circular shape.
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16. A high-frequency semiconductor device comprising:
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an antenna-ground plane provided above a semiconductor substrate, to be connected to a ground potential;
a patch electrode provided on said antenna-ground plane with an interlayer insulation film therebetween;
an antenna connection provided under said antenna-ground plane and connected to said patch electrode via a through-hole formed passing through said antenna-ground plane;
a ground plate provided between said antenna-ground plane and said semiconductor substrate and under said antenna connection, said ground plate being formed to extend over a substantially entire surface of said semiconductor substrate and to be connected to a ground potential; and
a line conductor provided on said ground plate with an interlayer insulation film therebetween, said line conductor forming a high-frequency transmission line together with said ground plate, wherein said antenna-ground plane and said line conductor are formed together on a common surface of said interlayer insulation film intervening between said line conductor and said ground plate. - View Dependent Claims (17, 18, 19, 20, 21)
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Specification