Focusing mirror and lens

• US 6,826,320 B2
• Filed: 02/19/2002
• Issued: 11/30/2004
• Est. Priority Date: 05/17/2001
• Status: Expired due to Term

• Current Assignee: Cisco Technology, Inc. (Cisco Systems, Inc.)
• Original Assignee: Sioptical Inc. (Cisco Systems, Inc.)
• Inventors: Deliwala, Shrenik
• Primary Examiner(s): ULLAH, AKM E
• Application Number:
  US10/078,203
• Publication Number:
  US 20030036265A1
• Time in Patent Office: 1,015 Days
• Field of Search: 385/1-14, 257/434, 257/435, 257/433, 359/248
• US Class Current: 385/14
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 2006/12038 Glass (SiO2 based materials)
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 2006/12097 Ridge, rib or the like
• CPC Class Codes: G02B 2006/12104 Mirror; Reflectors or the like
• CPC Class Codes: G02B 2006/12107 Grating
• CPC Class Codes: G02B 2006/12114 Prism
• CPC Class Codes: G02B 2006/12135 Temperature control
• CPC Class Codes: G02B 2006/12161 Distributed feedback [DFB]
• CPC Class Codes: G02B 2006/12164 Multiplexing; Demultiplexing
• CPC Class Codes: G02B 2006/12176 Etching
• CPC Class Codes: G02B 27/285 comprising arrays of elements, e.g. microprisms
• CPC Class Codes: G02B 5/045 Prism arrays
• CPC Class Codes: G02B 6/10 of the optical waveguide type G02B6/02, G02B6/24 take precedence; devices or arrangements for the control of light by electric, magnetic, electro-magnetic or acoustic means G02F1/00; transferring the modulation of modulated light G02F2/00; optical logic elements G02F3/00; optical analogue/digital converters G02F7/00
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/12007 forming wavelength selective elements, e.g. multiplexer, demultiplexer
• CPC Class Codes: G02B 6/12011 characterised by the arrayed waveguides, e.g. comprising a filled groove in the array section
• CPC Class Codes: G02B 6/12026 characterised by means for reducing the temperature dependence
• CPC Class Codes: G02B 6/12033 characterised by means for configuring the device, e.g. moveable element for wavelength tuning switching G02B6/35; thermo-optic devices G02F1/0147
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: G02B 6/1228 : Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02B 6/124 : Geodesic lenses or integrated gratings
• CPC Class Codes: G02B 6/2861 : using fibre optic delay lines and optical elements associated with them, e.g. for use in signal processing, e.g. filtering delay lines in general H03H, H01P9/00; optical computing devices G06E
• CPC Class Codes: G02B 6/29349 : Michelson or Michelson/Gires-Tournois configuration, i.e. based on splitting and interferometrically combining relatively delayed signals at a single beamsplitter
• CPC Class Codes: G02B 6/29358 : Multiple beam interferometer external to a light guide, e.g. Fabry-Pérot, etalon, VIPA plate, OTDL plate, continuous interferometer, parallel plate resonator G02B6/29347, G02B6/29349, G02B6/2935, G02B6/29361 take precedence; resonator evanescently coupled to light guide G02B6/29335
• CPC Class Codes: G02B 6/34 : utilising prism or grating G02B6/293 takes precedence
• CPC Class Codes: G02B 6/4215 : the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers G02B6/4246 takes precedence
• CPC Class Codes: G02B 6/4232 : using the surface tension of fluid solder to align the elements, e.g. solder bump techniques flip-chip mounting techniques in assembly of semiconductor devices H01L24/81
• CPC Class Codes: G02B 6/43 : Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
• CPC Class Codes: G02F 1/0147 : based on thermo-optic effects G02F1/132 takes precedence
• CPC Class Codes: G02F 1/0152 : using free carrier effects, e.g. plasma effect
• CPC Class Codes: G02F 1/025 : in an optical waveguide structure G02F1/017, G02F1/2257 take precedence
• CPC Class Codes: G02F 1/295 : Analog deflection from or in an optical waveguide structure]
• CPC Class Codes: G02F 2201/20 : delay line
• CPC Class Codes: H01L 27/1203 : the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688

Abstract

A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Claims

1. An optical device formed at least partially in a Silicon-On-Insulator (SOI) wafer comprising a substrate, an insulator layer disposed over said substrate and an upper silicon layer disposed over said insulator layer, the optical device comprising

a waveguide formed in a portion of the upper silicon layer;

and

a waveguide mirror formed in the upper silicon layer, wherein the waveguide mirror is formed at least in part by etching the upper silicon layer of the SOI wafer.

2. The optical device of claim 1, wherein the optical device includes an input/output light coupler, the optical waveguide including a cladding, and the input/output light coupler including an evanescent coupling region that is at least partially formed from the same material as the cladding.

3. The optical device of claim 2, wherein the evanescent coupling region and the cladding portion are at least partially formed of glass.

4. The optical device of claim 2, wherein the evanescent coupling region and the cladding portion are at least partially formed of a polyamide.

5. The optical device of claim 4, wherein the optical device includes a hybrid active electronic and optical circuit, wherein an electric insulator is also sued to partially define an active electronic circuit in a hybrid active electronic and optical circuit.

6. The optical device of claim 1, wherein altering an electric voltage applied to an active electronic circuit on the wafer affects a free carrier distribution associated with the optical device, and thereby changes the effective mode index of the optical device.

7. The optical device of claim 1, further comprising an active electronics portion that is located proximate a channel portion, in which electricity can be selectively applied to a region outside of the channel region to control the electromagnetic state of the channel portion in a manner that can effect light traversing the channel portion.

8. The optical device of claim 7, wherein the active electronics portion combines with the channel portion to act as one from the group of a modulator, a deflector, a diode, and a transistor.

9. The optical device of claim 8, further comprising a passive optical portion, wherein the passive optical portion and the active electronics portion are fabricated simultaneously to form a hybrid active electronic and optical circuit at least partially in the upper silicon layer.

10. The optical device of claim 1, wherein the waveguide mirror is configured to provide total internal reflection.

11. The optical device of claim 1, wherein the waveguide mirror is configured as an off-axis paraboloid.

12. The optical device of claim 1, wherein the waveguide mirror is configured as a beamsplitter to separate a single incident beam into a plurality of output beams.

13. The optical device of claim 1, wherein the optical device includes one from the group of a p-n device a field plated device, a Schottky device, a MOSCAP, and a MOSFET.

14. The optical device of claim 1, further comprising a channel formed in the waveguide, wherein the waveguide mirror focuses light into the channel.

15. The optical device of claim 1, wherein the waveguide mirror is included as a portion of a waveguide Fabry-Perot cavity.

16. The optical device of claim 1, wherein the waveguide mirror is included as a portion of an arrayed waveguide (AWG).

17. The optical device of claim 1, wherein material removed to form the waveguide mirror during said etching does not fully extend through the upper silicon layer.

18. The optical device of claim 1, wherein the upper silicon layer is less than or equal to 10 microns thick.

19. An optical device formed at least partially in a wafer, the optical device comprising:

an upper silicon layer formed in the wafer, the upper silicon layer at least partially forming a waveguide; and

a waveguide mirror formed in the upper silicon layer, wherein the waveguide mirror is formed at least in part by etching the upper silicon layer of the waveguide.

20. An optical device formed at least partially in a Silicon-On-Insulator (SOI) wafer comprising a substrate, an insulator layer disposed over said substrate and an upper silicon layer disposed over said insulator layer, the optical device comprising:

a waveguide formed in a portion of the upper silicon layer; and

a glass layer formed across at least part of the upper silicon layer;

a waveguide mirror disposed in the upper silicon layer and formed at least in part by etching the glass layer.

21. An optical device formed at least partially in a wafer, the optical device comprising:

an upper silicon layer formed on the wafer, the upper silicon layer at least partially forming a waveguide;

a glass layer formed across at least part of the upper silicon layer; and

a waveguide mirror disposed in the upper silicon layer and formed at least in party by etching the glass layer.

22. An optical device formed at least partially in a Silicon-On-Insulator (SOI) wafer comprising a substrate, an insulator layer disposed over said substrate and an upper silicon layer disposed over said insulator layer, the optical device comprising:

a waveguide formed in a portion of the upper silicon layer; and

a waveguide lens formed in the upper silicon layer, wherein the waveguide lens is formed at least in part by etching the upper silicon layer of the SOI wafer.

23. The optical device of claim 22, wherein the optical device includes an input/output light coupler, the optical waveguide including a cladding, and the input/output light coupler including an evanescent coupling region that is at least partially formed from the same material as the cladding.

24. The optical device of claim 23, wherein the evanescent coupling region and the cladding portion are at least partially formed of a glass.

25. The optical device of claim 23, wherein the evanescent coupling region and the cladding portion are at least partially formed of a polyamide.

26. The optical device of claim 25, wherein the optical device includes a hybrid active electronic and optical circuit, wherein an electric insulator is also used to partially define an active electronic circuit in a hybrid electronic and optical circuit.

27. The optical device of claim 22, wherein altering an electric voltage applied to an active electronic circuit on the wafer affects a free carrier distribution associated with the optical device, and thereby changes the effective mode index of the optical device.

28. The optical device of claim 22, further comprising an active electronics portion that is located proximate a channel portion, in which electricity can be selectively applied to a region outside of the channel portion to control the electromagnetic state of the channel portion in a manner that can effect light traversing the channel portion.

29. The optical device of claim 28, wherein the active electronics portion combines with the channel portion to act as one from the group of a modulator, a deflector, a diode, and a transistor.

30. The optical device of claim 29, further comprising a passive optical portion, wherein the passive optical portion and the active electronics portion are fabricated simultaneously to form a hybrid active electronic and optical circuit at least partially in the upper silicon layer.

31. The optical device of claim 22, wherein the waveguide lens is configured to provide total internal reflection.

32. The optical device of claim 22, wherein the waveguide lens is configured as a beamsplitter to separate a single incident beam into a plurality of output beams.

33. The optical device of claim 22, wherein the optical device includes one from the group of a p-n device, a field plated device, a Schottky device, a MOSCAP, and a MOSFET.

34. The optical device of claim 22, further comprising a channel formed in the waveguide, wherein the waveguide lens focuses light into the channel.

35. The optical device of claim 22, wherein material removed to form the waveguide lens during said etching does not fully extend through the upper silicon layer.

36. The optical device of claim 22, wherein the upper silicon layer is less than or equal to 10 microns thick.

37. An optical device formed at least partially in a wafer, the optical device comprising:

an upper silicon layer formed on the wafer, the upper silicon layer at least partially forming a waveguide; and

a waveguide lens formed in the upper silicon layer, wherein the waveguide lens is formed at least in part by etching the upper silicon layer of the wafer.

38. An optical device formed at least partially in a Silicon-On-Insulator (SOI) wafer comprising a substrate, an insulator layer disposed over said substrate and an upper silicon layer disposed over said insulator layer, the optical device comprising

a waveguide formed in a portion of the upper silicon layer;

a glass layer formed across at least part of the upper silicon layer; and

a waveguide lens functioning in the upper silicon layer formed at least in party by etching the glass layer.

39. An optical device formed at least partially in a wafer, the optical device comprising:

an upper silicon layer formed on the wafer, the upper silicon layer at least partially forming a waveguide;

a glass layer formed across at least part of the upper silicon layer; and

a waveguide lens functioning in the upper silicon layer formed at least in party by etching the glass layer.