Enhanced collimated deposition

• US 6,827,824 B1
• Filed: 04/12/1996
• Issued: 12/07/2004
• Est. Priority Date: 04/12/1996
• Status: Expired due to Fees

• Current Assignee: Conversant Intellectual Property Management Inc (MOSAID Technologies Inc. (f/k/a Conversant Intellectual Property Management))
• Original Assignee: Micron Technology, Inc.
• Inventors: Sandhu, Gurtej S., Blalock, Guy
• Primary Examiner(s): MCDONALD, RODNEY GLENN
• Application Number:
  US08/631,465
• Time in Patent Office: 3,161 Days
• Field of Search: 204/192.12, 204/298.02, 204/298.05, 204/298.06, 204/298.16, 204/298.11, 204/298.26, 427/586, 427/523, 427/298.11, 427/298.26
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/345 using substrate bias
• CPC Class Codes: C23C 14/351 using a magnetic field in close vicinity to the substrate
• CPC Class Codes: C23C 14/354 Introduction of auxiliary energy into the plasma
• CPC Class Codes: H01J 2237/3327 Coating high aspect ratio workpieces
• CPC Class Codes: H01J 37/32339 using electromagnetic radiation

Abstract

An apparatus for film deposition onto a substrate from a source of target particles including a plasma generator creating a plasma that isotropically accelerates the target particles towards the substrate. A secondary ionizer creates a secondary ionization zone between the plasma and the substrate support. The isotropically accelerated target particles are ionized as they pass through the secondary ionization zone. A static field generator creates a static field between the secondary ionization zone and the substrate accelerating the ionized target particles along a substantially collimated trajectory perpendicular to the substrate. Optionally, a collimator is included between the secondary ionization zone and the substrate and biased to focus and accelerate the collimated target particles.

Claims

1. An apparatus for film deposition comprising:

a deposition chamber;

a substrate support within the deposition chamber;

a source of target particles;

a plasma generator creating a plasma for initially ionizing the target particles that accelerates the target particles along a distribution of trajectories;

a secondary ionization zone within said deposition chamber between the source and the substrate, the secondary ionization zone comprised of at least one plane of optical energy to promote ionization of the target particles; and

a magnetic field generator creating a magnetic field between the secondary ionization zone and the substrate support accelerating the ionized target particles along a substantially collimated trajectory perpendicular to the substrate support.

2. The apparatus of claim 1 wherein the source of target particles comprises a sputter target and the plasma generator generates an inert gas plasma that sputters atoms from the sputter target.

3. The apparatus of claim 1 wherein the plasma generator comprises an electron cyclotron resonance heating type plasma generator producing a primary ionization zone adjacent to the source of target particles in which the target particles are ionized.

4. The apparatus of claim 1 wherein the secondary ionization zone is produced by a secondary ionizer which comprises an optical energy source.

5. The apparatus of claim 4 wherein the secondary ionizer comprises a laser.

6. The apparatus of claim 4 wherein the secondary ionizer comprises a laser outputting coherent optical energy into the deposition chamber at a wavelength selected to ionize the target particles preferentially over other components of the plasma.

7. The apparatus of claim 3 wherein the secondary ionization zone is separated from the primary ionization zone by a recombination zone in which the ionized target particles recombime with charged particles to become electrically neutral.

8. The apparatus of claim 1 further comprising a plurality of secondary ionization zones between the source and the substrate support, wherein the target particles are ionized each time they pass through one of the secondary ionization zones.

9. The apparatus of claim 1 wherein the magnetic field generator is positioned between the secondary ionization zone and the substrate support.

10. An apparatus for film deposition comprising:

a deposition chamber;

a source of target particles;

a plasma generator for creating a plasma for initially ionizing the target particles that accelerates the target particles alone a distribution of trajectories;

a secondary ionization zone within the deposition chamber between the source and the substrate support, the secondary ionization zone promoting ionization of the target particles; and

an electrostatic field generator comprising;

a first conductive collimator placed in the target particle trajectories;

a first DC voltage source having a polarity matching that of the ionized target atoms coupled to the first conductive collimator;

a second conductive collimator placed between the firs conductive collimator and the substrate support; and

a second DC voltage source having a polarity opposite that of the ionized target atoms coupled to the second conductive collimator.

11. A method for depositing a film onto a substrate comprising the steps of:

providing a source of target atoms;

accelerating the target atoms from the source towards the substrate, wherein a first plurality of the target atoms are electrically charged to a first polarity,

passing the target atoms through at least one secondary ionization zone positioned between the source and the substrate to electrically charge a second plurality of the target atoms to the first polarity, the second plurality being greater than the first plurality; and

steering the electrically charged target atoms into a collimated stream directed perpendicular to the substrate using an electrostatic field, wherein the step of steering comprises;

providing a conductive collimator grid charged to a second polarity opposite that of the first polarity, the conductive collimator grid located between the source and the substrate; and

generating an electrostatic field having the first polarity between the source and the conductive collimator grid, the electrostatic field having a magnitude and proximity from the conductive collimator grid such that at least some of the electrically charged target atoms are prevented from physical interaction with the conductive collimator grid.

12. The method of claim 11 wherein the step of accelerating comprises sputtering.

13. The method of claim 11 wherein the step of passing comprises the step of:

ionizing the second plurality of target atoms by exposing the target atoms to optical energy at a location spaced from the source of target atoms and spaced from the substrate.

14. The method of claim 13 wherein the optical energy is provided by a laser having a wavelength and power chosen to ionize the target atoms.

15. An apparatus for film deposition comprising:

a deposition chamber;

a substrate support within the deposition chamber;

a source of target particles;

a plasma generator creating a plasma for initially ionizing the target particles that accelerates the target particles along a distribution of trajectories;

a plurality of secondary ionization zones between the source and the substrate support, wherein the accelerated target particles are ionized as they pass through each of the secondary ionization zones; and

a static field generator creating an static field between the secondary ionization zones and the substrate support thereby accelerating the ionized target particles along a substantially collimated trajectory perpendicular to the substrate support, wherein the static field generator comprises;

a first conductive collimator grid placed in the target particle trajectories;

a first DC volt source having a polarity matching that of the ionized target atoms coupled to the first conductive collimator grid;

a second conductive collimator placed between the first conductive collimator grid and the substrate support; and

a second DC voltage source having a polarity opposite that of the ionized target atoms coupled to the second conductive collimator grid.

16. The apparatus of claim 15 wherein the first DC voltage source generates a voltage of lesser magnitude than the second DC voltage source.

17. The apparatus of claim 15 wherein the first DC voltage source generates a voltage in the range of 50-500 volts DC and the second DC voltage source generates a voltage in the range of 500-5000 volts DC.

18. The apparatus of claim 15 wherein the static field generator generates an electrostatic field.

19. The apparatus of claim 15 wherein the static field generator generates a magnetic field.

20. An apparatus for depositing film, said apparatus comprising:

a deposition chamber being adapted to bold a source of target particles and a substrate for receiving said target particles;

a plasma generator for initially ionizing said target particles;

a first secondary optical ionizer for creating a first plane of optical energy positioned to overlie said substrate, said first plane of optical energy ionizing target particles passing through said first plane to said substrate; and

a second secondary optical ionizer for creating a second plane of optical energy positioned to overlie said substrate, said second plane of optical energy ionizing target particles passing through said second plane to said substrate.

21. The apparatus, as set forth in claim 20, wherein said deposition chamber comprises a mirrored inner surface.

22. The apparatus, as set forth in claim 21, wherein said secondary optical ionizer comprises a laser arranged to direct said optical energy onto said mirrored inner surface of said deposition chamber, said mirrored inner surface creating said plane of optical energy.

23. The apparatus, as set forth in claim 20, further comprising:

an electrostatic collimator positioned between said source and said substrate, said collimator directing said target particles toward said substrate.

24. An apparatus for depositing film, said apparatus comprising:

a deposition chamber being adapted to hold a source of target particles and a substrate for receiving said target particles;

a mirror disposed within said deposition chamber;

a plasma generator initially ionizing said target particles; and

a secondary optical ionizer for directing optical energy to said mirror for creating a plane of optical energy positioned to overlie said substrate, said optical energy ionizing target particles passing through said plane to said substrate.

25. The apparatus, as set forth in claim 24, further comprising:

an electrostatic collimator positioned between said source and said substrate, said collimator directing said target particles toward said substrate.

26. An apparatus for depositing film, said apparatus comprising:

a deposition chamber having an inner surface being adapted for reflecting optical energy, said deposition chamber being adapted to hold a source of target particles and a substrate for receiving said target particles;

a plasma generator for initially ionizing said target particles; and

a secondary optical ionizer for directing optical energy to said inner surface of said deposition chamber for creating a plane of optical energy positioned to overlie said substrate, said optical energy ionizing target particles passing through said plane to said substrate.

27. The apparatus, as set forth in claim 26, wherein said inner surface comprises a mirror.

28. The apparatus, as set forth in claim 26, further comprising:

an electrostatic collimator positioned between said source and said substrate, said collimator directing said target particles toward said substrate.

29. An apparatus for depositing film, said apparatus comprising:

a deposition chamber being adapted to hold a source of target particles and a substrate for receiving said target particles;

a plasma generator for initially ionizing said target particles;

a secondary ionizer for creating a secondary ionization zone between said source and said substrate, said secondary ionization zone comprised of at least one plane of optical energy to promote ionization of said target particles prior to reaching said substrate; and

a collimator positioned between said source and said secondary ionization zone, said collimator directing said target particles toward said substrate.

30. The apparatus, as set forth in claim 29, wherein said collimator comprises an electrostatic collimator.

31. An apparatus for depositing film, said apparatus comprising:

a deposition chamber being adapted to hold a source of target particles and a substrate for receiving said target particles;

a plasma generator for initially ionizing said target particles;

a secondary ionizer for creating a secondary ionization zone between said source and said substrate, said secondary ionization zone promoting ionization of said target particles prior to reaching said substrate; and

an electrostatic collimator grid positioned between said secondary ionization zone and said substrate, said electrostatic collimator grid directing said target particles toward said substrate.