Deposition of tungsten films
First Claim
1. A method of forming a composite tungsten film, comprising:
- sequentially depositing tungsten nucleation layers and tungsten bulk layers on a substrate to form a composite tungsten layer, wherein each of the tungsten nucleation layers and the tungsten bulk layers have a thickness less than about 300 Å
.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of forming a composite tungsten film on a substrate is described. The composite tungsten film comprises sequentially deposited tungsten nucleation layers and tungsten bulk layers. Each of the tungsten nucleation layers and the tungsten bulk layers have a thickness less than about 300 Å. The tungsten nucleation layers and the tungsten bulk layers are formed one over the other until a desired thickness for the composite tungsten film is achieved. The resulting composite tungsten film exhibits good film morphology. The tungsten nucleation layers may be formed using a cyclical deposition process by alternately adsorbing a tungsten-containing precursor and a reducing gas on the substrate. The tungsten bulk layers may be formed using a chemical vapor deposition (CVD) process by thermally decomposing a tungsten-containing precursor.
-
Citations
43 Claims
-
1. A method of forming a composite tungsten film, comprising:
sequentially depositing tungsten nucleation layers and tungsten bulk layers on a substrate to form a composite tungsten layer, wherein each of the tungsten nucleation layers and the tungsten bulk layers have a thickness less than about 300 Å
.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
16. A method of forming a composite tungsten film, comprising:
-
sequentially depositing tungsten nucleation layers and tungsten bulk layers on a substrate to form a composite tungsten layer, wherein each of the tungsten nucleation layers is deposited by alternately adsorbing a tungsten-containing precursor and a reducing gas on the substrate and wherein each of the tungsten bulk layers is deposited by thermally decomposing a gas mixture comprising a tungsten-containing precursor. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
depositing a dielectric layer on the substrate surface;
forming at least one aperture within the dielectric layer; and
depositing a barrier layer comprising titanium nitride or tantalum nitride on the dielectric layer prior to the sequentially depositing tungsten.
-
-
29. The method of claim 28 wherein the composite tungsten film has a thickness within a range of about 500 Å
- to about 3000 Å
.
- to about 3000 Å
-
30. A method for forming a composite tungsten film for use in a memory cell, comprising:
-
providing a substrate structure, wherein the substrate structure comprises an insulating material comprising, silicon oxide or silicon nitride, having at least one aperture formed therein; and
sequentially depositing tungsten nucleation layers and tungsten bulk layers, at least partially within the at least one aperture to form a composite tungsten layer, wherein the tungsten nucleation layers are deposited by alternately adsorbing a tungsten-containing precursor and a reducing gas on the substrate structure and wherein the tungsten bulk layers are deposited by thermally decomposing the tungsten-containing precursor. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
-
Specification