Magnetoresistive sensor and manufacturing method therefor

• US 6,828,039 B2
• Filed: 03/13/2002
• Issued: 12/07/2004
• Est. Priority Date: 11/05/2001
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Sugawara, Takahiko
• Primary Examiner(s): Bernatz, Kevin M.
• Application Number:
  US10/097,211
• Publication Number:
  US 20030087130A1
• Time in Patent Office: 1,000 Days
• Field of Search: 427/127, 360/313, 360/324, 428/621, 428/313.9, 428/702, 428/632, 428/34.1, 428/156, 428/213, 428/313.3, 428/315.5, 428/315.9, 428/316.6, 428/323, 428/336, 428/367, 428/398, 428/692, 428/698
• US Class Current: 428/621
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/09 Magnetoresistive devices
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: Y10T 428/1107 Magnetoresistive
• CPC Class Codes: Y10T 428/12465 having magnetic properties, or preformed fiber orientation coordinate with shape
• CPC Class Codes: Y10T 428/12535 with additional, spatially distinct nonmetal component
• CPC Class Codes: Y10T 428/12611 Oxide-containing component
• CPC Class Codes: Y10T 428/13 Hollow or container type article [e.g., tube, vase, etc.]
• CPC Class Codes: Y10T 428/249974 Metal- or silicon-containing element
• CPC Class Codes: Y10T 428/25 Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
• CPC Class Codes: Y10T 428/2918 including free carbon or carbide or therewith [not as steel]
• CPC Class Codes: Y10T 428/2964 Artificial fiber or filament
• CPC Class Codes: Y10T 428/2975 Tubular or cellular

Abstract

A magnetoresistive sensor including a lower electrode layer, a nanotube structure film composed of an insulator matrix and a plurality of nanotubes dispersively arranged in the insulator matrix, a magnetoresistive film provided on the nanotube structure film, and an upper electrode layer provided on the magnetoresistive film. Each nanotube is composed of a circular tubular nonmetal and a circular cylindrical metal surrounded by the circular tubular nonmetal. The nanotube structure film is partially etched at its central region to make conduction of the upper electrode layer and the lower electrode layer through the magnetoresistive film and the circular cylindrical metal of each nanotube present at the central region.

Claims

1. A magnetoresistive sensor comprising:

upper and lower electrode layers;

a conducting path layer provided between said upper and lower electrode layers, said conducting path layer being formed by arranging a cylinder in an insulator, said cylinder comprising a tubular nonmetal and a cylindrical metal surrounded by said tubular nonmetal; and

a magnetoresistive film provided between said conducting path layer and one of said upper and lower electrode layers.

3. A magnetoresistive sensor according to claim 1, wherein said tubular nonmetal is formed of a material different from that of said insulator.

4. A magnetoresistive sensor according to claim 3, wherein said tubular nonmetal contains carbon.

5. A magnetoresistive sensor according to claim 1, wherein said cylindrical metal contains chromium.

6. A magnetoresistive sensor according to claim 1, wherein said insulator is formed of SiO₂.

2. A magnetoresistive sensor comprising:

upper and lower electrode layers;

a conducting path layer provided between said upper and lower electrode layers, said conducting path layer being formed by arranging in an insulator matrix at least one cylindrical metal in a tube having high resistivity, said conducting path layer having a first region and a second region smaller in film thickness than said first region; and

a magnetoresistive film provided between said conducting path layer and one of said upper and lower electrode layers.

7. A manufacturing method for a magnetoresistive sensor, comprising the steps of:

depositing a lower electrode layer on a substrate;

forming a cylindrical metal surrounded by a tubular nonmetal on said lower electrode layer;

depositing an insulator on said lower electrode layer after forming said cylindrical metal so that said cylindrical metal is embedded in said insulator to thereby form a conducting path layer;

depositing a magnetoresistive film on said conducting path layer; and

depositing an upper electrode layer on said magnetoresistive film.

8. A manufacturing method according to claim 7, further comprising the steps of forming a resist pattern on said conducting path layer before depositing said magnetoresistive film;

and

partially etching said conducting path layer by using said resist pattern as a mask.

9. A magnetoresistive sensor comprising:

a lower electrode layer;

a nanotube structure film provided on said lower electrode layer, said nanotube structure film comprising an insulator matrix and a plurality of nanotubes dispersively arranged in said insulator matrix;

a magnetoresistive film provided on said nanotube structure film; and

an upper electrode layer provided on said magnetoresistive film;

each of said nanotubes comprising a circular tubular nonmetal and a circular cylindrical metal surrounded by said circular tubular nonmetal;

said nanotube structure film being partially etched at a central on thereof to make conduction of said upper electrode layer and said lower electrode layer through said magnetoresistive film and said circular cylindrical metal of each nanotube present at said central region.

10. A magnetoresistive sensor according to claim 9, wherein said circular tubular nonmetal is formed of carbon, and said circular cylindrical metal is formed of chromium.

11. A magnetoresistive sensor according to claim 10, wherein said insulator matrix is formed of SiO₂.

12. A manufacturing method for a magnetoresistive sensor, comprising the steps of:

depositing a lower electrode layer on a substrate;

forming a first resist pattern on said lower electrode layer;

etching said lower electrode layer by using said first resist pattern as a mask to form said lower electrode layer into a desired shape;

forming a plurality of nanotubes of Cr—

C on said lower electrode layer;

depositing an insulator matrix on said lower electrode layers that said plurality of nanotubes are embedded in said insulator matrix to form nanotube structure film;

forming a second resist pattern on said nanotube structure film;

etching said nanotube structure film by using said second resist pattern as a mask to remove an unwanted portion of said nanotube structure film;

forming a third resist pattern on said nanotube structure film;

etching a central region of said nanotube structure film so that the top of each nanotube present at said central region is exposed, by using said third resist pattern as a mask;

depositing a magnetoresistive film on said nanotube structure film;

depositing an upper electrode layer on said magnetoresistive film;

forming a fourth resist pattern on said upper electrode layer; and

etching said upper electrode layer by using said fourth resist pattern as a mask to form said upper electrode layer into a desired shape.

13. A manufacturing method according to claim 12, wherein each nanotube comprises a circular tube formed of C and a circular cylinder formed of Cr, said circular cylinder being surrounded by said tubular tube.