Anode thin film for lithium secondary battery

• US 6,828,063 B2
• Filed: 11/16/2001
• Issued: 12/07/2004
• Est. Priority Date: 11/18/2000
• Status: Expired due to Fees

• Current Assignee: Samsung SDI Company Limited
• Original Assignee: Samsung SDI Company Limited
• Inventors: Park, Young-sin, Lee, Sung-man, Oh, Joo-yeal, Baik, Hong-koo
• Primary Examiner(s): CHANEY, CAROL DIANE
• Application Number:
  US09/987,939
• Publication Number:
  US 20020048705A1
• Time in Patent Office: 1,117 Days
• Field of Search: 429/218.1, 429/219, 429/231.95, 429/231.9
• US Class Current: 429/219
• CPC Class Codes: H01M 10/0525 Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
• CPC Class Codes: H01M 4/134 Electrodes based on metals, Si or alloys
• CPC Class Codes: H01M 4/38 of elements or alloys
• CPC Class Codes: H01M 4/386 Silicon or alloys based on silicon
• CPC Class Codes: H01M 4/40 Alloys based on alkali metals
• CPC Class Codes: H01M 4/661 Metal or alloys, e.g. alloy coatings H01M4/669 take precedence
• CPC Class Codes: Y02E 60/10 Energy storage using batteries

Abstract

The present invention provides an anode thin film for a lithium secondary battery having a current collector and an anode active material layer formed thereon. Here, the anode active material layer is a multiple-layer thin film comprising a silicon (Si) layer and a silver (Ag) layer or a single-layer thin film comprising silicon (Si) and silver (Ag).

Claims

1. An anode thin film for a lithium secondary battery comprising a current collector and an anode active material layer arranged above the current collector, wherein the anode active material layer is a multiple-layer thin film comprising a silicon (Si) layer and a silver (Ag) layer,

further comprising a buffer layer between the current collector and the anode active material layer, the buffer layer being made of at least one selected from the group consisting of vanadium, nickel, molybdenum and copper.

2. The anode thin film of claim 1, wherein the thickness of the buffer layer is in the range of 50 to 250 Å

.

3. The anode thin film of claim 1, wherein the thickness of the Si layer is in the range of 50 to 250 Å

and the thickness of the Ag layer is in the range of 10 to 70 Å

.

4. The anode thin film of claim 1, wherein the Si layer and the Ag layer are alternately stacked.

5. The anode thin film of claim 4, wherein the Ag layer is formed between Si layers.

6. The anode thin film of claim 1, wherein the topmost layer of the multiple-layer thin film is made of Ag.

7. The anode thin film of claim 1, wherein the silicon layer consists of silicon.

8. The anode thin film of claim 1, wherein the silver layer consists of silver.