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Semiconductor plasma processing apparatus with first and second processing state monitoring units

  • US 6,828,165 B2
  • Filed: 05/16/2003
  • Issued: 12/07/2004
  • Est. Priority Date: 09/06/2001
  • Status: Expired due to Term
First Claim
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1. A semiconductor plasma processing apparatus for processing a semiconductor wafer, comprising:

  • a sensor for monitoring at least one processing state of said semiconductor plasma processing apparatus;

    first and second processing state monitoring units coupled to said sensor; and

    a selector unit for selecting one of said first and second processing state monitoring units;

    wherein said first processing state monitoring unit includes;

    processing result input means for inputting externally measured values for processing results of a semiconductor wafer processed by said semiconductor processing apparatus in a pre-trial;

    a model equation generation unit which generates a model equation for predicting a processing result using sensed data acquired by said sensor as an explanatory variable, based on said sensed data and said externally measured values;

    a processing result prediction unit for predicting a processing result based on said model equation and said sensed data; and

    a process recipe control unit for comparing said predicted processing result with a pre-set value to control a processing condition of said semiconductor plasma processing apparatus such that a deviation between said predicted processing result and said pre-set value is corrected; and

    wherein said second processing state monitoring includes;

    a principal component extraction unit for extracting a principal component based on sensed data acquired by said sensor; and

    a fault detection unit for detecting a fault in processing based on variations in the principal component extracted by said extraction unit.

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