Radiation-emitting semiconductor component

• US 6,828,597 B2
• Filed: 09/09/2002
• Issued: 12/07/2004
• Est. Priority Date: 09/28/2001
• Status: Expired due to Fees

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Streubel, Klaus, Wegleiter, Walter
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Lee, Eugene
• Application Number:
  US10/237,472
• Publication Number:
  US 20030062821A1
• Time in Patent Office: 820 Days
• Field of Search: 257/99, 257/91, 257/93, 257/98, 438/22
• US Class Current: 257/99
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

In a radiation-emitting semiconductor component having a semiconductor body that comprises a radiation-generating active layer, having a central front-side contact on a front side of the semiconductor body and a back-side contact on a back side of the semiconductor body for impressing a current into the semiconductor body containing the active layer, the back-side contact comprises a plurality of contact locations spaced from one another, whereby the size of the contact locations increases with increasing distance from the central front-side contact.

Claims

1. A radiation-emitting semiconductor component having a semiconductor body, the semiconductor body comprising:

a radiation-generating active layer,

a central front-side contact on a front side of the semiconductor body;

a back-side contact on a back side of the semiconductor body for impressing a current into the semiconductor body containing the active layer, the back-side contact comprises a plurality of contact locations spaced from one another, a size of the contact locations increasing with increasing distance from the central front-side contact.

2. A radiation-emitting semiconductor component according to claim 1, wherein the size of the contact locations and a spacing of the contact locations from one another are selected such that a flow of current through the active layer is essentially homogeneous during operation.

3. A radiation-emitting semiconductor component according to claim 1, wherein the contact locations are formed by circular or rectangular contact points of different diameter or width.

4. A radiation-emitting semiconductor component according to claim 1, wherein a majority of spaced contact locations contain several groups of contact locations of a respectively same size, the contact locations of each group being arranged with essentially the same spacing from the central front-side contact and concentrically around a common mid-point on a back side of the semiconductor body.

5. A radiation-emitting semiconductor component according claim 1, further comprising an insulation layer that separates the spaced contact locations.

6. A radiation-emitting semiconductor component according to claim 1, further comprising trenches introduced in the semiconductor body that separate the spaced contact locations.

7. A radiation-emitting semiconductor component according to claim 6, further comprising a plurality of spaced conical or pyramidal frustums introduced into a back side of the semiconductor body, respective contact locations being arranged on their cover surfaces.

8. A radiation-emitting semiconductor component according to claim 7, wherein a size of the conical or pyramidal frustums is constant and an area of the contact locations arranged on the cover surfaces increases with increasing distance from the central front-side contact.

9. A radiation-emitting semiconductor component according to claim 1, wherein the component is configured such that the contact locations can be electrically contacted via a carrier for eutectic bonding that is provided with bond metal.