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Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component

  • US 6,828,605 B2
  • Filed: 12/11/2001
  • Issued: 12/07/2004
  • Est. Priority Date: 12/11/2000
  • Status: Active Grant
First Claim
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1. A field-effect-controllable semiconductor configuration, comprising:

  • a semiconductor body;

    a source zone and a drain zone of a first conductivity type disposed in said semiconductor body;

    a body zone of a second conductivity type disposed between said source zone and said drain zone;

    a gate electrode having a surface being adjacent said body zone and being configured to form a channel zone in said body zone if a gate potential is applied to said gate electrode, said channel zone having a current flow in a direction substantially parallel to said surface of said gate electrode upon application of the gate potential;

    a dielectric insulating said gate electrode from said semiconductor body;

    at least a first region and a second region of the second conductivity type provided in said channel zone, said first region extending adjacent said surface of said gate electrode into a depth of said semiconductor body and being disposed substantially perpendicular to the direction of current flow in said channel zone;

    said first region having a first doping concentration, said second region having a second doping concentration, said second doping concentration being lower than said first doping concentration;

    said source zone, said drain zone, said body zone, and said gate electrode forming a semiconductor component having a threshold voltage and a given on resistance; and

    said first region and said second region being configured such that a combination of said first region and said second region results in the threshold voltage being greater than zero and in the given on resistance being lower than an on resistance resulting from a channel zone being doped with only one of said first doping concentration and said second doping concentration.

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