Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

• US 6,829,161 B2
• Filed: 01/10/2003
• Issued: 12/07/2004
• Est. Priority Date: 01/10/2003
• Status: Active Grant

• Current Assignee: Samsung Semiconductor Incorporated (Samsung Electronics Co. Ltd.)
• Original Assignee: Grandis, Inc. (Samsung Electronics Co. Ltd.)
• Inventors: Albert, Frank, Nguyen, Paul P., Huai, Yiming
• Primary Examiner(s): Hoang, Huan
• Application Number:
  US10/339,962
• Publication Number:
  US 20040136231A1
• Time in Patent Office: 697 Days
• Field of Search: 365/158, 365/171, 365/173, 365/97
• US Class Current: 365/158
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect

Abstract

A method and system for providing a magnetic element capable of being written using the spin-transfer effect and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a spin tunneling junction, a separation layer and a spin valve. In an alternate embodiment, the spin tunneling junction and/or spin valve may be dual. The separation layer is between a first free layer of the spin tunneling junction and a second free layer of the spin valve. The separation layer is configured so that the two free layers are magnetostatically coupled, preferably with their magnetizations antiparallel. In an alternate embodiment, having a dual spin valve and a dual spin tunneling junction, the separation layer may be omitted, and the appropriate distance provided using an antiferromagnetic layer. Another embodiment includes shaping the element such that the spin valve has a smaller lateral dimension than the spin tunneling junction.

Claims

1. A magnetic element comprising:

a spin tunneling junction having a first free layer, a barrier layer and a first pinned layer, the first pinned layer being ferromagnetic and having a first pinned layer magnetization, the first pinned layer magnetization being pinned in a first direction, the first free layer being ferromagnetic and having a first free layer magnetization, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer, the barrier layer also residing between the first pinned layer and the first free layer;

a spin valve having a second pinned layer, a nonmagnetic spacer layer and a second free layer, the second pinned layer being ferromagnetic and having a second pinned layer magnetization, the second pinned layer magnetization being pinned in a second direction, the second free layer being ferromagnetic and having a second free layer magnetization, the nonmagnetic spacer layer being conductive and residing between the second free layer and the second pinned layer;

a separation layer residing between the first free layer of the spin tunneling junction and the second free layer of the spin valve, the separation layer being configured to allow the first free layer and the second free layer to be magnetostatically coupled;

wherein the magnetic element is configured to allow the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

2. The magnetic element of claim 1 wherein the first free layer and the second free layer are magnetostatically coupled such that the first free layer magnetization is antiparallel to the second free layer magnetization.

3. The magnetic element of claim 1 wherein the second pinned layer of the spin valve is a synthetic pinned layer including a first ferromagnetic layer and a second ferromagnetic layer separated by a second nonmagnetic spacer layer, the first ferromagnetic layer and the second ferromagnetic layer being antiferromagnetically coupled.

4. The magnetic element of claim 3 wherein the first pinned layer of the spin tunneling junction is a second synthetic pinned layer including a third ferromagnetic layer and a fourth ferromagnetic layer separated by a third nonmagnetic spacer layer, the third ferromagnetic layer and the fourth ferromagnetic layer being antiferromagnetically coupled.

5. The magnetic element of claim 1 wherein the spin valve further includes a first antiferromagnetic layer adjacent to the second pinned layer, the first antiferromagnetic layer for pinning the second pinned layer magnetization of the second pinned layer.

6. The magnetic element of claim 5 wherein the spin tunneling junction further includes a second antiferromagnetic layer adjacent to the first pinned layer, the second antiferromagnetic layer for pinning the first pinned layer magnetization of the first pinned layer.

7. The magnetic element of claim 1 wherein the spin valve has a first width, a first depth and a first dimension, the first dimension being the first width multiplied by the first depth and the spin tunneling junction has a second width, a second depth and a second dimension, the second dimension being the second width multiplied by the second depth, the first dimension being less than the second dimension.

8. The magnetic element of claim 7 wherein the magnetic element has a top, a bottom and a trapezoidal shape, the spin valve residing at the top of the magnetic element and the spin tunneling junction residing at the bottom of the magnetic element so that the first dimension is less than the second width dimension.

9. The magnetic element of claim 7 wherein the magnetic element has an inverse T-shape having a base and a vertical portion, the base being wider than the vertical portion, the spin valve residing in the vertical potion and the spin tunneling junction residing in the base.

10. The magnetic element of claim 1 further comprising a flux guide and an insulating layer, the flux guide having a first end and a second end, a portion of the first end being in proximity to the first free layer, a portion of the second end being in proximity to the second free layer, the insulating layer residing between the flux guide and the first free layer, the second free layer and the separation layer.

11. The magnetic element of claim 1 wherein the separation layer is sufficiently thick to avoid exchange coupling of the first free layer and the second free layer.

12. The magnetic element of claim 1 wherein the separation layer includes material having a short spin diffusion length.

13. The magnetic element of claim 12 wherein the separation layer includes at least one of Pt, Mn, a Cu/CuPt sandwich or a CuMn/Cu sandwich.

14. The magnetic element of claim 13 wherein the separation layer has a thickness and the short spin diffusion length is less than or equal to the thickness of the separation layer.

15. The magnetic element of claim 1 wherein the spin valve further includes a second nonmagnetic spacer layer, a third pinned layer and an antiferromagnetic layer adjacent to the third pinned layer, the second nonmagnetic spacer layer residing between the third pinned layer and the second free layer such that the second free layer is between the nonmagnetic spacer layer and the second nonmagnetic spacer layer.

16. The magnetic element of claim 1 wherein the spin tunneling junction further includes a second barrier layer, a third pinned layer, and an antiferromagnetic layer adjacent to the third pinned layer, the second barrier layer residing between the third pinned layer and the first free layer such that the first free layer is between the barrier layer and the second barrier layer.

17. A magnetic element comprising:

a dual spin tunneling junction having a first pinned layer, a first barrier layer, a first free layer, a second barrier layer and a second pinned layer, the first barrier layer residing between the first pinned layer and the first free layer, the second barrier layer residing between the first free layer and the second pinned layer, the first pinned layer being ferromagnetic and having a first pinned layer magnetization pinned in a first direction, the second pinned layer being ferromagnetic and having a second pinned layer magnetization pinned in a second direction, the first free layer being ferromagnetic and having a first free layer magnetization, the first barrier layer being an insulator and having a first thickness that allows tunneling through the first barrier layer, the second barrier layer being an insulator and having a second thickness that allows tunneling through the second barrier layer;

a dual spin valve having a third pinned layer, a first nonmagnetic spacer layer, a second free layer, a second nonmagnetic spacer layer and a fourth pinned layer, the first nonmagnetic spacer residing between the third pinned layer and the second free layer, the second nonmagnetic spacer residing between the second free layer and the fourth pinned layer, the third pinned layer being ferromagnetic and having a third pinned layer magnetization pinned in the second direction, the fourth pinned layer being ferromagnetic and having a fourth pinned layer magnetization pinned in the first direction, the second free layer being ferromagnetic and having a second free layer magnetization, the first free layer and the second free layer being magnetostatically coupled, the first nonmagnetic spacer layer and the second nonmagnetic spacer layer being conductive;

an antiferromagnetic layer residing between the second pinned layer of the spin tunneling junction and the third pinned layer of the spin valve, the antiferromagnetic layer being configured to pin the second magnetization in the second direction and the third magnetization in the second direction;

wherein the magnetic element is configured to allow the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

18. The magnetic element of claim 17 wherein the first free layer and the second free layer are magnetostatically coupled such that the first free layer magnetization is antiparallel to the second free layer magnetization.

19. The magnetic element of claim 17 wherein the dual spin valve has a first width, a first depth and a first dimension, the first dimension being the first width multiplied by the first depth and the dual spin tunneling junction has a second width, a second depth and a second dimension, the second dimension being the second width multiplied by the second depth, the first dimension being less than the second dimension.

20. The magnetic element of claim 19 wherein the magnetic element has a top, a bottom and a trapezoidal shape, the dual spin valve residing at the top of the magnetic element and the dual spin tunneling junction residing at the bottom of the magnetic element so that the first dimension is less than the second width dimension.

21. The magnetic element of claim 19 wherein the magnetic element has an inverse T-shape having a base and a vertical portion, the base being wider than the vertical portion, the dual spin valve residing in the vertical potion and the dual spin tunneling junction residing in the base.

22. A magnetic memory device comprising:

a plurality of magnetic cells including a plurality of magnetic elements, each of the plurality of magnetic elements including a spin tunneling junction, a spin valve, and a separation layer, the spin tunneling junction having a first free layer, a barrier layer and a first pinned layer, the first pinned layer being ferromagnetic and having a first pinned layer magnetization, the first pinned layer magnetization being pinned in a first direction, the first free layer being ferromagnetic and having a first free layer magnetization, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer, the barrier layer also residing between the first pinned layer and the first free layer, the spin valve having a second pinned layer, a nonmagnetic spacer layer and a second free layer, the second pinned layer being ferromagnetic and having a second pinned layer magnetization, the second pinned layer magnetization being pinned in a second direction, the second free layer being ferromagnetic and having a second free layer magnetization, the nonmagnetic spacer layer being conductive and residing between the second free layer and the second pinned layer, the separation layer residing between the first free layer of the spin tunneling junction and the second free layer of the spin valve, the separation layer being configured to allow the first free layer and the second free layer to be magnetostatically coupled such that the first free layer magnetization is antiparallel to the second free layer magnetization, wherein the magnetic element is configured to allow the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element;

a plurality of row lines coupled to the plurality of magnetic cells; and

a plurality of column lines coupled with the plurality of cells, the plurality of row lines and the plurality of column lines for selecting a portion of the plurality of magnetic cells for reading and writing.

23. A magnetic memory device comprising:

a plurality of magnetic cells including a plurality of magnetic elements, each of the plurality of magnetic elements including a dual spin tunneling junction, a dual spin valve and an antiferromagnetic layer, the dual spin tunneling junction having a first pinned layer, a first barrier layer, a first free layer, a second barrier layer and a second pinned layer, the first barrier layer residing between the first pinned layer and the first free layer, the second barrier layer residing between the first free layer and the second pinned layer, the first pinned layer being ferromagnetic and having a first pinned layer magnetization pinned in a first direction, the second pinned layer being ferromagnetic and having a second pinned layer magnetization pinned in a second direction, the first free layer being ferromagnetic and having a first free layer magnetization, the first barrier layer being an insulator and having a first thickness that allow tunneling through the first barrier layer, the second barrier layer being an insulator and having a second thickness that allow tunneling through the second barrier layer, the dual spin valve having a third pinned layer, a first nonmagnetic spacer layer, a second free layer, a second nonmagnetic spacer layer and a fourth pinned layer, the first nonmagnetic spacer residing between the third pinned layer and the second free layer, the second nonmagnetic spacer residing between the second free layer and the fourth pinned layer, the third pinned layer being ferromagnetic and having a third pinned layer magnetization pinned in the second direction, the fourth pinned layer being ferromagnetic and having a fourth pinned layer magnetization pinned in the first direction, the second free layer being ferromagnetic and having a second free layer magnetization, the first nonmagnetic spacer layer and the second nonmagnetic spacer layer being conductive, the antiferromagnetic layer residing between the second pinned layer of the spin tunneling junction and the third pinned layer of the spin valve, the antiferromagnetic layer being configured to pin the second magnetization in the second direction and the third magnetization in the second direction, the first free layer and the second free layer being magnetostatically coupled, the magnetic element being configured to allow the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element;

a plurality of row lines coupled to the plurality of magnetic cells; and

a plurality of column lines coupled with the plurality of cells, the plurality of row lines and the plurality of column lines for selecting a portion of the plurality of magnetic cells for reading and writing.

24. A method for utilizing a magnetic memory comprising the steps of:

(a) in a write mode, writing to a first portion of a plurality of magnetic cells by driving a write current in a CPP configuration through the a first portion of a plurality of magnetic elements, each of the magnetic elements a plurality of magnetic cells including a spin tunneling junction, a spin valve, and a separation layer, the spin tunneling junction having a first free layer, a barrier layer and a first pinned layer, the first pinned layer being ferromagnetic and having a first pinned layer magnetization, the first pinned layer magnetization being pinned in a first direction, the first free layer being ferromagnetic and having a first free layer magnetization, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer, the barrier layer also residing between the first pinned layer and the first free layer, the spin valve having a second pinned layer, a nonmagnetic spacer layer and a second free layer, the second pinned layer being ferromagnetic and having a second pinned layer magnetization, the second pinned layer magnetization being pinned in a second direction, the second free layer being ferromagnetic and having a second free layer magnetization, the nonmagnetic spacer layer being conductive and residing between the second free layer and the second pinned layer, the separation layer residing between the first free layer of the spin tunneling junction and the second free layer of the spin valve, the separation layer being configured to allow the first free layer and the second free layer to be magnetostatically coupled, wherein the magnetic element is configured to allow the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element;

(b) in a read mode, reading a signal from a second portion of the plurality of cells.

25. A method for utilizing a magnetic memory comprising the steps of:

(a) in a write mode, writing to a first portion of a plurality of magnetic cells by driving a write current in a CPP configuration through the a first portion of a plurality of magnetic elements, each of the magnetic elements a plurality of magnetic cells including a dual spin tunneling junction, a dual spin valve and an antiferromagnetic layer, the dual spin tunneling junction having a first pinned layer, a first barrier layer, a first free layer, a second barrier layer and a second pinned layer, the first barrier layer residing between the first pinned layer and the first free layer, the second barrier layer residing between the first free layer and the second pinned layer, the first pinned layer being ferromagnetic and having a first pinned layer magnetization pinned in a first direction, the second pinned layer being ferromagnetic and having a second pinned layer magnetization pinned in a second direction, the first free layer being ferromagnetic and having a first free layer magnetization, the first barrier layer being an insulator and having a first thickness that allow tunneling through the first barrier layer, the second barrier layer being an insulator and having a second thickness that allow tunneling through the second barrier layer, the dual spin valve having a third pinned layer, a first nonmagnetic spacer layer, a second free layer, a second nonmagnetic spacer layer and a fourth pinned layer, the first nonmagnetic spacer residing between the third pinned layer and the second free layer, the second nonmagnetic spacer residing between the second free layer and the fourth pinned layer, the third pinned layer being ferromagnetic and having a third pinned layer magnetization pinned in the second direction, the fourth pinned layer being ferromagnetic and having a fourth pinned layer magnetization pinned in the first direction, the second free layer being ferromagnetic and having a second free layer magnetization, the first nonmagnetic spacer layer and the second nonmagnetic spacer layer being conductive, the antiferromagnetic layer residing between the second pinned layer of the spin tunneling junction and the third pinned layer of the spin valve, the antiferromagnetic layer being configured to pin the second magnetization in the second direction and the third magnetization in the second direction, the first free layer and the second free layer being magnetostatically coupled, the magnetic element being configured to allow the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element;

(b) in a read mode, reading a signal from a second portion of the plurality of cells.

26. A method for providing magnetic element comprising the steps of:

(a) providing a first pinned layer, the first pinned layer being ferromagnetic and having a first pinned layer magnetization, the first pinned layer magnetization being pinned in a first direction;

(b) providing a barrier layer, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer;

(c) providing a first free layer, the first free layer being ferromagnetic and having a first free layer magnetization, the barrier layer residing between the first pinned layer and the first free layer, the first pinned layer, the barrier layer and the first free layer being included in a spin tunneling junction;

(d) providing a separation layer;

(e) providing a second free layer, the second free layer being ferromagnetic and having a second free layer magnetization, the separation layer residing between the first free layer and the second free layer and being configured to allow the first free layer and the second free layer to be magnetostatically coupled;

(f) providing a nonmagnetic spacer layer, the nonmagnetic spacer layer being conductive;

(g) providing a second pinned layer, the second pinned layer being ferromagnetic and having a second pinned layer magnetization, the second pinned layer magnetization being pinned in a second direction, the nonmagnetic spacer layer residing between the second pinned layer and the second free layer, the second free layer, the second pinned layer and the nonmagnetic spacer layer being included in a spin valve;

wherein the magnetic element is configured to allow the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

27. The method of claim 26 wherein the first free layer and the second free layer are magnetostatically coupled such that the first free layer magnetization is antiparallel to the second free-layer magnetization.

28. The method of claim 26 wherein the step of providing the second pinned layer (g) includes the step of:

(g1) providing a synthetic pinned layer for the second pinned layer, the synthetic pinned layer including a first ferromagnetic layer and a second ferromagnetic layer separated by a second nonmagnetic spacer layer, the first ferromagnetic layer and the second ferromagnetic layer being antiferromagnetically coupled.

29. The method of claim 28 wherein the step of providing the first pinned layer (a) includes the step of:

(a1) providing a second synthetic pinned layer for the first pinned layer of the spin tunneling junction, the second synthetic pinned layer including a third ferromagnetic layer and a fourth ferromagnetic layer separated by a third nonmagnetic spacer layer, the third ferromagnetic layer and the fourth ferromagnetic layer being antiferromagnetically coupled.

30. The method of claim 26 further comprising the steps of:

(h) providing a first antiferromagnetic layer adjacent to the first pinned layer, the first antiferromagnetic layer for pinning the first pinned layer magnetization of the first pinned layer.

31. The method of claim 30 further comprising the step of

(i) providing a second antiferromagnetic layer adjacent to the second pinned layer, the second antiferromagnetic layer for pinning the second pinned layer magnetization of the second pinned layer.

32. The method of claim 26 wherein the spin valve has a first width, a first depth and a first dimension, the first dimension being the first width multiplied by the first depth and the spin tunneling junction has a second width, a second depth and a second dimension, the second dimension being the second width multiplied by the second depth, method further comprising the step of:

(h) ensuring that the first dimension is less than the second dimension.

33. The method of claim 32 wherein the ensuring step (h) further includes the step of:

(h1) shaping the magnetic element to have a trapezoidal shape such that the magnetic element has a top and a bottom wider than the top, the spin valve at the top of the magnetic element and the spin tunneling junction at the bottom of the magnetic element so that the first dimension is less than the second dimension.

34. The method of claim 33 wherein the shaping step (h1) further includes the steps of:

(h1i) providing a bilayer photoresist structure on the magnetic element;

(h1ii) milling the magnetic element at a first angle and using the bilayer photoresist structure as a mask, the first angle being measured from normal to the magnetic element; and

(h1iii) milling the magnetic element at a second angle, the second angle being measured from normal to the magnetic element and being larger than the first angle.

35. The method of claim 33 wherein the shaping step (h1) further includes the steps of:

(h1i) providing a bilayer photoresist structure on the magnetic element;

(h1ii) milling the magnetic element using the bilayer photoresist structure as a mask;

(h1iii) trimming the bilayer photoresist structure; and

(h1iv) milling the magnetic element after the bilayer photoresist structure has been trimmed.

36. The method of claim 33 wherein the shaping step (h1) further includes the steps of:

p1 (h1i) providing a first bilayer photoresist structure on the magnetic element;

(h1ii) milling the magnetic element using the first bilayer photoresist structure as a mask;

(h1iii) providing a second bilayer photoresist structure that is less wide than the first bilayer photoresist structure; and

(h1iv) milling the magnetic element using the second bilayer photoresist structure as a mask.

37. The method of claim 32 wherein the ensuring step (h) further includes the step of:

(h1) shaping magnetic element into an inverse T-shape having a base and a vertical portion, the base being wider than the vertical portion, the spin valve residing in the vertical potion and the spin tunneling junction residing in the base.

38. The method of claim 26 further comprising the step of:

(h) providing an insulating layer; and

(i) providing a flux guide, the flux guide having a first end and a second end, a portion of the first end being in proximity to the first free layer, a portion of the second end being in proximity to the second free layer, the insulating layer residing between the flux guide and the first free layer, the second free layer and the separation layer.

39. The method of claim 26 wherein the separation layer is sufficiently thick to avoid exchange coupling of the first free layer and the second free layer.

40. The method of claim 26 wherein the separation layer includes material having a short spin diffusion length.

41. The method of claim 40 wherein the separation layer has a thickness and the short diffusion length is less than or equal to the thickness of the separation layer.

42. The method of claim 40 wherein the separation layer includes at least one of Pt, Mn, a Cu/CuPt sandwich or a CuMn/Cu sandwich.

43. The method of claim 26 further comprising the steps of:

(i) providing a second nonmagnetic spacer layer for the spin valve;

(j) providing a third pinned layer for the spin valve, the second nonmagnetic spacer residing between the third pinned layer and the second free layer such that the second free layer is between the nonmagnetic spacer layer and the second nonmagnetic spacer layer; and

(k) providing an antiferromagnetic layer adjacent to the third pinned layer.

44. The method of claim 26 further comprising the steps of:

(i) providing a second barrier layer for the spin tunneling junction;

(j) providing a third pinned layer for the spin tunneling junction, the second barrier layer residing between the third pinned layer and the first free layer such that the first free layer is between the barrier layer and the second barrier layer; and

(k) providing an antiferromagnetic layer adjacent to the third pinned layer.

45. A method for providing magnetic element comprising the steps of:

(a) providing a first pinned layer, the first pinned layer being ferromagnetic and having a first pinned layer magnetization, the first pinned layer magnetization being pinned in a first direction;

(b) providing a first barrier layer, the first barrier layer being insulating and having a first thickness that allows tunneling through the first barrier layer;

(c) providing a first free layer, the first free layer being ferromagnetic and having a first free layer magnetization, the barrier layer residing between the first pinned layer and the first free layer, the first pinned layer;

(d) providing a second barrier layer, the second barrier layer being insulating and having a second thickness that allows tunneling through the second barrier layer;

(e) providing a second pinned layer, the second pinned layer being ferromagnetic and having a second pinned layer magnetization, the second pinned layer magnetization being pinned in a second direction, the first pinned layer, the first barrier layer, the first free layer, the second barrier layer and the second pinned layer being included in a spin tunneling junction;

(f) providing an antiferromagnetic layer;

(g) providing a third pinned layer, the third pinned layer being ferromagnetic and having a third pinned layer magnetization, the antiferromagnetic layer pinning the second magnetization of the second pinned layer and the third pinned layer magnetization in the second direction;

(h) providing a first nonmagnetic spacer layer, the first nonmagnetic spacer layer being conductive;

(i) providing a second free layer, the second free layer being ferromagnetic and having a second free layer magnetization, the first free layer and the second free layer being magnetostatically coupled;

(f) providing a nonmagnetic spacer layer, the nonmagnetic spacer layer being conductive;

(g) providing a second pinned layer, the second pinned layer being ferromagnetic and having a second pinned layer magnetization, the second pinned layer magnetization being pinned in a second direction, the nonmagnetic spacer layer residing between the second pinned layer and the second free layer, the second free layer, the second pinned layer and the nonmagnetic spacer layer being included in a spin valve;

wherein the magnetic element is configured to allow the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.