Error recovery for nonvolatile memory

• US 6,829,167 B2
• Filed: 12/12/2002
• Issued: 12/07/2004
• Est. Priority Date: 12/12/2002
• Status: Expired due to Term

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: SanDisk Corporation (Western Digital Corporation)
• Inventors: Tu, Loc, Chen, Jian
• Primary Examiner(s): Elms, Richard
• Assistant Examiner(s): NGUYEN, HIEN N
• Application Number:
  US10/318,621
• Publication Number:
  US 20040114432A1
• Time in Patent Office: 726 Days
• Field of Search: 365/185.18, 365/185.09, 365/185.24, 365/185.29, 365/185.22
• US Class Current: 365/185.18
• CPC Class Codes: G11C 29/50 Marginal testing, e.g. race, voltage or current testing

Abstract

An error recovery technique is used on marginal nonvolatile memory cells. A marginal memory cell is unreadable because it has a voltage threshold (VT) of less than zero volts. By biasing adjacent memory cells, this will shift the voltage threshold of the marginal memory cells, so that it is a positive value. Then the VT of the marginal memory cell can be determined. The technique is applicable to both binary and multistate memory cells.

Claims

1. A method of operating a memory integrated circuit comprising:

providing a string of a plurality of memory cells connected in series between a source and a drain;

selecting a first memory cell in the string to read data from;

placing a word line voltage on a word line of the first memory cell;

for a memory cell standard read mode, placing a first read voltage on a word line of a second memory cell, adjacent to the first memory cell;

for a memory cell recovery read mode, placing a second read voltage on the word line of the second memory cell, wherein the second read voltage is different from the first read voltage; and

reading data from the first memory cell.

2. The method of claim 1 wherein the second read voltage is above the first read voltage.

3. The method of claim 1 wherein the second read voltage is below the first read voltage.

4. The method of claim 1 wherein the word line voltage is about zero volts.

5. The method of claim 1 wherein the first read voltage is in a voltage range from about 4 volts to about 5 volts.

6. The method of claim 1 wherein the second read voltage is at least about 0.25 volts above the first read voltage.

7. The method of claim 1 further comprising:

for the memory cell recovery read mode, placing the second read voltage on a word line of a third memory cell, also adjacent to the first memory cell, wherein the second read voltage is different from the first read voltage.

8. A storage device comprising:

a memory controller causing selection of a first memory cell in a string of a plurality of memory cells connected in series between a source and a drain to read data from,

causing placement of a word line voltage on a word line of the first memory cell,

causing, for a memory cell standard read mode, placement of a first read voltage on a word line of a second memory cell, adjacent to the first memory cell,

causing, for a memory cell recovery read mode, placement of a second read voltage on the word line of the second memory cell, wherein the second read voltage is different from the first read voltage, and

causing reading of data from the first memory cell.

9. The storage device of claim 8 wherein the second read voltage is above the first read voltage.

10. The storage device of claim 8 wherein the second read voltage is below the first read voltage.

11. The storage device of claim 8 wherein the word line voltage is about zero volts.

12. The storage device of claim 8 wherein the first read voltage is in a voltage range from about 4 volts to about 5 volts.

13. The storage device of claim 8 wherein the second read voltage is at least about 0.25 volts above the first read voltage.

14. A method of reading data stored as levels of charge in a plurality of memory cells including charge storage elements positioned between parallel word lines and a substrate, comprising:

reading the data stored in memory cells along a selected word line by placing a first voltage on the selected word line and a second voltage on at least one other word line neighboring the selected word line,

checking the validity of the data read from the memory cells along the selected word line, and

in response to at least some of the read data being invalid, re-reading the data stored in the memory cells along the selected word line by placing the first voltage on the selected word line and a third voltage on said at least one other word line that is different from the second voltage.

15. The method of claim 14, wherein checking the validity of the read data includes use of an error correction code calculated from the data.

16. The method of claim 14, wherein the second and third voltages are positive.

17. The method of claim 16, wherein the read data is invalid on account of one or more of the memory cells being read having a negative threshold voltage.

18. A method of reading data stored as levels of charge in a plurality of memory cells, comprising:

reading the data stored in a first group of the plurality of memory cells by applying read voltages to the memory cells of the first group,

checking the validity of the data read from the first group of memory cells, and

in response to at least some of the read data being invalid, re-reading the data stored in the memory cells of the first group of memory cells by applying voltages to a second group of the plurality of memory cells adjacent the first group that alter threshold voltages of memory cells of the first group.

19. The method of claim 18, wherein the data are stored in memory cells having charge storage elements and control gates, wherein the data stored in the first group of memory cells are read by applying a first voltage to the control gates of the first group of memory cells and a second voltage to the control gates of the second group of memory cells, and wherein the data stored in the first group of memory cells are re-read by applying a third voltage to the control gates of the second group of memory cells that is different than the second voltage.

20. The method of claim 19, wherein the second and third voltages are positive.

21. The method of claim 20, wherein said at least some of the read data is invalid on account of one or more of the memory cells being read having a negative threshold voltage.

22. The method of claim 18, wherein said at least some of the read data is invalid on account of one or more of the memory cells being read having a negative threshold voltage.

23. The method of claim 18, wherein checking the validity of the read data includes use of an error correction code calculated from the data.