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Error recovery for nonvolatile memory

  • US 6,829,167 B2
  • Filed: 12/12/2002
  • Issued: 12/07/2004
  • Est. Priority Date: 12/12/2002
  • Status: Expired due to Term
First Claim
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1. A method of operating a memory integrated circuit comprising:

  • providing a string of a plurality of memory cells connected in series between a source and a drain;

    selecting a first memory cell in the string to read data from;

    placing a word line voltage on a word line of the first memory cell;

    for a memory cell standard read mode, placing a first read voltage on a word line of a second memory cell, adjacent to the first memory cell;

    for a memory cell recovery read mode, placing a second read voltage on the word line of the second memory cell, wherein the second read voltage is different from the first read voltage; and

    reading data from the first memory cell.

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