Vertical cavity surface emitting laser using photonic crystals

• US 6,829,281 B2
• Filed: 06/19/2002
• Issued: 12/07/2004
• Est. Priority Date: 06/19/2002
• Status: Expired due to Term

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Finisar Corporation (II-VI Incorporated)
• Inventors: Deng, Hongyu, Lipson, Jan, Lenosky, Thomas
• Primary Examiner(s): Harvey, Min Sun
• Assistant Examiner(s): Flores Ruiz, Delma R.
• Application Number:
  US10/175,309
• Publication Number:
  US 20030235229A1
• Time in Patent Office: 902 Days
• Field of Search: 372/92, 372/96, 372/99, 372/43-50
• US Class Current: 372/96
• CPC Class Codes: H01S 5/11 Comprising a photonic bandgap structure
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Abstract

A vertical cavity surface emitting laser (VCSEL) using photonic crystals. Photonic crystals are formed such that the active region of the VCSEL is bounded by the photonic crystals. The photonic crystals have a periodic cavity structure that reflects light of certain wavelengths through the active region of the VCSEL such that laser light at the wavelengths is generated. Additional photonic crystals can be formed to increase the bandwidth of the VCSEL. The photonic crystals can also be combined with distributed bragg reflector layers to form the mirrors of a VCSEL.

Claims

1. A vertical cavity surface emitting laser comprising:

a lower mirror layer formed on a substrate, wherein the lower mirror layer comprises a lower photonic crystal having a cavity structure that includes one or more cavities and at least one distributed bragg reflector layer;

an upper mirror layer; and

an active region formed between the lower mirror layer and the upper mirror layer wherein photons are reflected between the lower mirror layer and the upper mirror layer through the active region.

2. A vertical cavity surface emitting laser as defined in claim 1, wherein the upper mirror layer further comprises an upper photonic crystal that has a cavity structure.

3. A vertical cavity surface emitting laser as defined in claim 2, wherein the cavity structure of the lower photonic crystal and the cavity structure of the upper photonic crystal are periodic.

4. A vertical cavity surface emitting laser as defined in claim 3, wherein the cavity structure of the lower photonic crystal is substantially the same as the cavity structure of the upper photonic crystal.

5. A vertical cavity surface emitting laser as defined in claim 1, wherein the one or more cavities the lower photonic crystal are filled with air, and wherein the one or more cavities of the upper photonic crystal are filled with air.

6. A vertical cavity surface emitting laser as defined in claim 1, wherein the lower mirror layer comprises a plurality of distributed bragg reflector layers.

7. A vertical cavity surface emitting laser as defined in claim 6, wherein the distributed bragg reflector layers are formed between the active region and the lower photonic crystal.

8. A vertical cavity surface emitting laser as defined in claim 6, wherein the distributed bragg reflector layers are formed between the substrate and the lower photonic crystal.

9. A vertical cavity surface emitting laser as defined in claim 1, wherein the upper mirror layer further comprises one or more distributed bragg reflector layers.

10. A vertical cavity surface emitting laser as defined in claim 2, wherein the upper mirror layer further comprises an extra photonic crystal.

11. A vertical cavity surface emitting laser as defined in claim 1, wherein light with a wavelength of at least 1.3 microns is emitted by the vertical cavity surface emitting laser.

12. A vertical cavity surface emitting laser comprising:

a substrate;

a lower mirror layer formed on the substrate, wherein the lower mirror layer includes a plurality of distributed bragg reflector layers;

an active region formed on the lower mirror layer, wherein the active region is lattice matched to the lower mirror layer; and

an upper photonic crystal that is formed and lattice matched to the active region, wherein the upper photonic crystal includes a plurality of cavities, wherein light is reflected through the active region by the lower mirror layer and the upper photonic crystal such that laser light is produced at a wavelength that is related to a cavity structure of the upper photonic crystal.

13. A vertical cavity surface emitting laser as defined in claim 12, wherein the lower mirror layer further comprises a lower photonic crystal that has a periodic cavity structure, wherein the lower photonic crystal is formed from an n-type semiconductor material and wherein the upper photonic crystal is formed from a p-type semiconductor material.

14. A vertical cavity surface emitting laser as defined in claim 12, wherein the active region comprises a plurality of quantum wells or quantum spots.

15. A vertical cavity surface emitting laser as defined in claim 12, wherein the cavity structure of the lower photonic crystal is a periodic structure and wherein each cavity has a shape that affects the wavelength emitted by the vertical cavity surface emitting laser.

16. A vertical cavity surface emitting laser as defined in claim 15, wherein the cavity structure of the upper photonic crystal is a periodic structure and wherein each cavity has a shape that affects the wavelength emitted by the vertical cavity surface emitting laser, and wherein the periodic structure of the upper photonic crystal is the same as the periodic structure of the lower photonic crystal.

17. A vertical cavity surface emitting laser as defined in claim 13, wherein the plurality of cavities of the lower photonic crystal and the plurality of cavities of the upper photonic crystal are filled with air.

18. A vertical cavity surface emitting laser as defined in claim 13, wherein the cavities of the lower photonic crystal and the cavities of the upper photonic crystal are formed by either dry etching or lithography.

19. A vertical cavity surface emitting laser as defined in claim 13, further comprising one or more distributed bragg reflector layers formed between the lower photonic crystal and the active region.

20. A vertical cavity surface emitting laser as defined in claim 13, further comprising a third photonic crystal formed on the upper photonic crystal.

21. A vertical cavity surface emitting laser as defined in claim 12 wherein light with a wavelength of at least 1.3 microns is emitted by the vertical cavity surface emitting laser.

22. A method for fabricating vertical cavity surface emitting laser, the method comprising:

forming a lower mirror layer on a substrate comprising one or more distributed bragg layers;

forming an active region on the first mirror layer; and

forming an upper mirror layer that includes an upper photonic crystal on the active region such that light is reflected through the active region by the lower mirror layer and the upper mirror layer, wherein a periodic cavity structure is formed in the upper photonic crystal.

23. A method as defined in claim 22, wherein the active region is formed on the one or more distributed bragg layers.

24. A method as defined in claim 22, wherein forming a lower mirror layer on a substrate further comprises:

forming a lower photonic crystal on the one or more distributed bragg layers; and

forming a cavity structure in the lower photonic crystal, wherein the cavity structure of the lower photonic crystal is substantially the same as the cavity structure of the upper photonic crystal.

25. A method as defined in claim 22, further comprising:

forming an additional photonic crystal on either the upper photonic crystal or the lower photonic crystal; and

forming a cavity structure in the additional photonic crystal.

26. A method as defined in claim 24, further comprising changing an index of either the lower photonic crystal or the upper photonic crystal by filling cavities with a material whose refractive index is different than a refractive index of either the lower photonic crystal or the upper photonic crystal.

27. A method as defined in claim 22, wherein light with a wavelength of at least 1.3 microns is emitted by the vertical cavity surface emitting laser.