Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a non-single crystalline semiconductor film on an insulating surface;
introducing ions of an element which is inert with respect to said semiconductor film into a selected portion of said semiconductor film using a first mask covering a first portion of said semiconductor film provided over said semiconductor film;
disposing a crystallization promoting material in contact with said semiconductor film;
crystallizing said semiconductor film by heating wherein said crystallization promoting material segregates in said selected region during the crystallization;
forming a second mask over said semiconductor film; and
etching a part of said first portion of said semiconductor film and said selected portion of said semiconductor film using said second mask after said heating to form an active layer of said semiconductor device.
1 Assignment
0 Petitions
Accused Products
Abstract
In a method for manufacturing a crystalline silicon film by utilizing a metal element that promotes the crystallization of silicon, an influence of this metal element can be suppressed.
A nickel element 104 is retained in contact with a surface of an amorphous silicon film 103 patterned to form a predetermined pattern in such a manner that the metal element is brought into contact with the amorphous silicon film 103 patterned to form a predetermined pattern. Next, the crystalline silicon film 105 is formed by a heat treatment. At this time, the nickel element is segregated in the edge region of the pattern. Further, a crystalline silicon film 100 having no region to which the metal element concentrated by patterning using a mask 107. By using this crystalline silicon film 100 as an active layer, the thin film transistor is fabricated.
98 Citations
71 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a non-single crystalline semiconductor film on an insulating surface;
introducing ions of an element which is inert with respect to said semiconductor film into a selected portion of said semiconductor film using a first mask covering a first portion of said semiconductor film provided over said semiconductor film;
disposing a crystallization promoting material in contact with said semiconductor film;
crystallizing said semiconductor film by heating wherein said crystallization promoting material segregates in said selected region during the crystallization;
forming a second mask over said semiconductor film; and
etching a part of said first portion of said semiconductor film and said selected portion of said semiconductor film using said second mask after said heating to form an active layer of said semiconductor device. - View Dependent Claims (2)
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3. A method for manufacturing a semiconductor device comprising the steps of:
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forming a non-single crystalline semiconductor film on an insulating surface provided over a quartz substrate;
introducing ions of an element which is inert with respect to said semiconductor film into a selected portion of said semiconductor substrate using a first mask covering a first portion of said semiconductor film provided over said semiconductor film;
disposing a crystallization promoting material in contact with said semiconductor film;
crystallizing said semiconductor film by heating at a temperature of 800 to 1100°
C. wherein said crystallization promoting material segregates in said selected region during the crystallizing;
forming a second mask over said semiconductor film; and
etching a part of said first portion of said semiconductor film and said selected portion of said semiconductor film using said second mask after said heating to form an active layer of said semiconductor device. - View Dependent Claims (4)
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5. A method for manufacturing a semiconductor device comprising:
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providing a semiconductor film with a crystallization promoting material;
introducing phosphorus into a selected portion of said semiconductor film using a first mask covering a first portion of said semiconductor film provided over said semiconductor film;
crystallizing said semiconductor film with said selected region of said semiconductor film containing said phosphorus to getter said crystallization promoting material during said crystallizing;
forming a second mask over said semiconductor film; and
etching a part of said first portion of said semiconductor film and said selected portion of said semiconductor film using said second mask after said heating to form an active layer of said semiconductor device. - View Dependent Claims (6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device comprising:
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providing a semiconductor film with a crystallization promoting material;
introducing phosphorus into a selected portion of said semiconductor film using a first mask covering a first portion of said semiconductor film provided over said semiconductor film;
crystallizing said semiconductor film by heating with said selected region of said semiconductor film containing said phosphorus to getter said crystallization promoting material during said crystallizing;
forming a second mask over said semiconductor film; and
etching a part of said first portion of said semiconductor film and said selected portion of said semiconductor film using said second mask after said heating to form an active layer of said semiconductor device. - View Dependent Claims (11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device comprising:
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providing a semiconductor film with a crystallization promoting material;
introducing phosphorus into a selected portion of said semiconductor film using a first mask covering a first portion of said semiconductor film provided over said semiconductor film;
crystallizing said semiconductor film with said selected region of said semiconductor film containing said phosphorus to getter said crystallization promoting material during said crystallizing;
forming a second mask over said semiconductor film; and
etching a part of said first portion of said semiconductor film and said selected portion of said semiconductor film using said second mask after said heating to form an active layer of said semiconductor device. - View Dependent Claims (16, 17, 18, 19)
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20. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor film comprising silicon over a substrate;
providing said semiconductor film with a crystallization promoting material;
introducing an argon ion into a selected portion of said semiconductor film using a first mask covering a first portion of said semiconductor film provided over said semiconductor film;
heating said semiconductor film to getter said crystallization promoting material into said selected portion of said semiconductor film forming a second mask over said semiconductor film; and
etching a part of said first portion of said semiconductor film and said selected portion of said semiconductor film using said second mask after said heating to form an active layer of said semiconductor device. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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27. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor film comprising silicon over a substrate;
providing said semiconductor film with a crystallization promoting material;
introducing an argon ion into a selected portion of said semiconductor film using a first mask covering a first portion of said semiconductor film provided over said semiconductor film;
heating said semiconductor film to crystallize said semiconductor film using said crystallization promoting material and to getter said crystallization promoting material into said selected portion of said semiconductor film forming a second mask over said semiconductor film; and
etching a part of said first portion of said semiconductor film and said selected portion of said semiconductor film using said second mask after said heating to form an active layer of said semiconductor device. - View Dependent Claims (28, 29, 30, 31, 32, 33)
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34. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor island comprising silicon over a substrate;
providing said semiconductor island with a crystallization promoting material;
introducing an argon ion into a selected portion of said semiconductor island;
heating said semiconductor island to getter said crystallization promoting material into said selected portion of said semiconductor island removing said selected portion of said semiconductor island and a part of said semiconductor island adjacent to said selected portion in order to form an active layer of said semiconductor device. - View Dependent Claims (35, 36, 37, 38, 39, 41)
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40. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor island comprising silicon over a substrate;
providing said semiconductor island with a crystallization promoting material;
introducing an argon ion into a selected portion of said semiconductor island;
heating said semiconductor island to crystallize said semiconductor island using said crystallization promoting material and to getter said crystallization promoting material into said selected portion of said semiconductor island removing said selected portion of said semiconductor island and a part of said semiconductor island adjacent to said selected portion in order to form an active layer of said semiconductor device. - View Dependent Claims (42, 43, 44, 45)
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46. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor film comprising silicon over a substrate;
providing said semiconductor film with a crystallization promoting material;
introducing an argon ion into a selected portion of said semiconductor film using a mask provided over said semiconductor film;
heating said semiconductor film to getter said crystallization promoting material into said selected portion of said semiconductor film; and
etching said selected portion of said semiconductor film and a part of said semiconductor film covered with said mask in said introducing step after said heating to form an active layer of the semiconductor device, wherein said part of said semiconductor film covered with said mask in said introducing step is adjacent to said selected portion. - View Dependent Claims (47, 48, 49, 50, 51)
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52. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor film comprising silicon over a substrate;
providing said semiconductor film with a crystallization promoting material;
introducing an argon ion into a selected portion of said semiconductor film using a mask provided over said semiconductor film;
heating said semiconductor film to crystallize said semiconductor film using said crystallization promoting material and to getter said crystallization promoting material into said selected portion of said semiconductor film; and
etching said selected portion of said semiconductor film and a part of said semiconductor film covered with said mask in said introducing step after said heating to form an active layer of the semiconductor device, wherein said part of said semiconductor film covered with said mask in said introducing step is adjacent to said selected portion. - View Dependent Claims (53, 54, 55, 56, 57)
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58. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor film comprising silicon over a substrate;
providing said semiconductor film with a crystallization promoting material;
introducing an argon ion into a selected portion of said semiconductor film using a first mask covering a first portion of said semiconductor film provided over said semiconductor film;
heating said semiconductor film to getter said crystallization promoting material into said selected portion of said semiconductor film;
forming a second mask over said semiconductor film;
etching a part of said first portion of said semiconductor film and said selected portion of said semiconductor film using said second mask after said heating to form an active layer of the semiconductor device. - View Dependent Claims (59, 60, 61, 62, 63, 64)
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65. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor film comprising silicon over a substrate;
providing said semiconductor film with a crystallization promoting material;
introducing an argon ion into a selected portion of said semiconductor film using a first mask covering a first portion of said semiconductor film provided over said semiconductor film;
heating said semiconductor film to crystallize said semiconductor film using said crystallization promoting material and to getter said crystallization promoting material into said selected portion of said semiconductor film;
forming a second mask over said semiconductor film;
etching a part of said first portion of said semiconductor film and said selected portion of said semiconductor film using said second mask after said heating to form an active layer of the semiconductor device. - View Dependent Claims (66, 67, 68, 69, 70, 71)
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Specification