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Method for making semiconductor device including band-engineered superlattice

  • US 6,830,964 B1
  • Filed: 08/22/2003
  • Issued: 12/14/2004
  • Est. Priority Date: 06/26/2003
  • Status: Active Grant
First Claim
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1. A method for making a semiconductor device comprising:

  • forming a superlattice comprising a plurality of stacked groups of layers; and

    forming regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked groups of layers;

    each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon;

    the energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions so that the superlattice has a higher charge carrier mobility in the parallel direction than would otherwise be present.

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