Method of forming field effect transistor comprising at least one of a conductive metal or metal compound in electrical connection with transistor gate semiconductor material
First Claim
1. A method of forming a line of field effect transistors respectively having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material, the method comprising:
- forming transistor gate semiconductive material into an elongated continuous gate line over a semiconductive material channel region, the gate line comprising elongated continuous semiconductive material sidewalls of the line of field effect transistors being formed;
oxidizing the elongated continuous semiconductive material sidewalls of the gate line; and
after the oxidizing, forming at least one of a conductive metal or metal compound in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the elongated continuous gate line of the field effect transistors being formed, the coextensive elongated portion comprising both the transistor gate semiconductive material and the at least one of the conductive metal or metal compound.
8 Assignments
0 Petitions
Accused Products
Abstract
The invention includes methods of forming field effect transistors. In one implementation, a method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material includes forming transistor gate semiconductive material into a gate line over a semiconductive material channel region. The gate line includes semiconductive material sidewalls. The semiconductive material sidewalls of the gate line are oxidized. After the oxidizing, at least one of a conductive metal or metal compound is formed in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed.
-
Citations
32 Claims
-
1. A method of forming a line of field effect transistors respectively having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material, the method comprising:
-
forming transistor gate semiconductive material into an elongated continuous gate line over a semiconductive material channel region, the gate line comprising elongated continuous semiconductive material sidewalls of the line of field effect transistors being formed;
oxidizing the elongated continuous semiconductive material sidewalls of the gate line; and
after the oxidizing, forming at least one of a conductive metal or metal compound in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the elongated continuous gate line of the field effect transistors being formed, the coextensive elongated portion comprising both the transistor gate semiconductive material and the at least one of the conductive metal or metal compound. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A method of forming a line of floating gate field effect transistors comprising:
-
forming floating gate semiconductive material over a semiconductive material channel region;
forming dielectric material over the floating gate semiconductive material;
forming control gate semiconductive material over the dielectric material;
in a common masking step, patterning the floating gate semiconductive material and the control gate semiconductive material into a desired elongated final gate line shape comprising floating gate semiconductive material sidewalls and elongated continuous control gate line semiconductive material sidewalls of the line of floating gate field effect transistors being formed;
after the patterning, oxidizing the floating gate semiconductive material sidewalls and the elongated continuous control gate line semiconductive material sidewalls in a common oxidizing step; and
after the oxidizing, forming at least one of a conductive metal or metal compound in electrical connection with the patterned elongated continuous gate line shape of the control gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of a control gate line of the line of floating gate field effect transistors being formed, the coextensive elongated portion comprising both the control gate semiconductive material and the at least one of the conductive metal or metal compound. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
-
-
21. A method of forming a line of field effect transistors respectively having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material, the method comprising:
-
forming transistor gate semiconductive material over a semiconductive material channel region;
forming masking material over the transistor gate semiconductive material;
patterning the transistor gate semiconductive material and the masking material into an elongated continuous gate line comprising elongated continuous semiconductive material sidewalls of the line of field effect transistors being formed;
after the patterning, oxidizing the elongated continuous semiconductive material sidewalls of the gate line;
after the oxidizing, depositing insulative material over the gate line including the patterned masking material;
after the depositing, exposing the masking material of the gate line through the insulative material;
after the exposing, removing the masking material effective to form a trough line within the insulative material that is substantially coextensive with and over the transistor gate semiconductive material of the line of field effect transistors being formed; and
after the removing, forming at least one of a conductive metal or metal compound in electrical connection with the transistor gate semiconductive material within the trough line to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistors being formed. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
-
Specification