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Method of fabricating flip chip semiconductor device utilizing polymer layer for reducing thermal expansion coefficient differential

  • US 6,830,999 B2
  • Filed: 06/17/2002
  • Issued: 12/14/2004
  • Est. Priority Date: 09/12/1997
  • Status: Expired due to Term
First Claim
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1. A method of preparing a semiconductor chip for mounting to a circuit substrate having a first thermal expansion coefficient, the method comprising the steps of:

  • (a) providing a semiconductor chip having at least one bond pad disposed on its active side and a second thermal expansion coefficient different from the first thermal expansion coefficient;

    (b) monolithically applying a polymer over the surface of the active side of the chip and the at least one bond pad to form a polymer layer;

    (c) removing the polymer layer from the bond pad, the layer abutting the bond pad;

    (d) depositing an interconnect metallic layer over a portion of the surface of the polymer layer for coupling the bond pad to the surface of the polymer layer; and

    (e) disposing at least one solder bump on the polymer layer, the solder bump being in registration with the metallic layer for coupling the solder bump to the bond pad, wherein the step of monolithically applying the polymer is controlled to provide the polymer layer with a particular thickness that causes the at least one solder bump to have an effective thermal expansion coefficient, as modified by the polymer layer, between the first thermal expansion coefficient and the second thermal expansion coefficient.

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