Diffusion barrier layer for semiconductor device and fabrication method thereof

• US 6,831,362 B2
• Filed: 10/15/2002
• Issued: 12/14/2004
• Est. Priority Date: 01/20/1998
• Status: Expired due to Term

• Current Assignee: LG Semicon Co Ltd (SK Hynix Inc.)
• Original Assignee: LG Semicon Co Ltd (SK Hynix Inc.)
• Inventors: Lee, Sung-Man, Baik, Hong Koo, Ha, Jae-Hee
• Primary Examiner(s): POTTER, ROY KARL
• Application Number:
  US10/270,351
• Publication Number:
  US 20030047811A1
• Time in Patent Office: 791 Days
• Field of Search: 257/751, 257/700, 295/71, 295/78
• US Class Current: 257/751
• CPC Class Codes: H01L 21/02263 deposition from the gas or vapour phase
• CPC Class Codes: H01L 21/28568 the conductive layers comprising transition metals H01L21/28518 takes precedence
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76864 Thermal treatment
• CPC Class Codes: H01L 23/485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The present invention relates to a diffusion barrier layer for a semiconductor device and fabrication method thereof. The diffusion barrier layer according to the present invention is fabricated by forming a diffusion barrier layer containing a refractory metal material and an insulating material on an insulating layer and in a contact hole, wherein the insulating layer being partially etched to form the contact hole, is formed on a semiconductor substrate; and annealing the diffusion barrier layer. Therefore, an object of the present invention is to provide a diffusion barrier layer for a semiconductor device, which is of an amorphous or microcrystalline state and thermodynamically stable even at a high temperature since an insulating material is bonded to a refractory metal material in the diffusion barrier layer.

Claims

1. A thin film for a semiconductor device, comprising a diffusion barrier layer as a stuffed layer containing an insulating material bonded to a refractory metal material.

2. The thin film of claim 1, wherein the insulating material is formed of at least one of oxide or nitride.

3. The thin film of claim 1 wherein the refractory metal material is formed of at least one of 4B, 5B or 6B groups which include Ti, Ta, Mo and W.

4. The thin film of claim 1 wherein the diffusion barrier layer is in an amorphous or microcrystalline state.

5. The thin film of claim 1, wherein the thin film comprises Ta—

CeO₂.

6. The thin film of claim 1, wherein the thin film has been formed by co-sputtering.

7. The thin film of claim 1, wherein the thin film is thermally stabilized.

8. A thin film for a semiconductor device, comprising a stuffed layer containing an insulating material bonded to a refractory metal material, wherein the insulating material is formed of at least one of oxide or nitride.

9. A thin film for a semiconductor device, comprising an insulating material bonded to a refractory metal material, wherein the thin film comprises Ta—

CeO₂.