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Diffusion barrier layer for semiconductor device and fabrication method thereof

  • US 6,831,362 B2
  • Filed: 10/15/2002
  • Issued: 12/14/2004
  • Est. Priority Date: 01/20/1998
  • Status: Expired due to Term
First Claim
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1. A thin film for a semiconductor device, comprising a diffusion barrier layer as a stuffed layer containing an insulating material bonded to a refractory metal material.

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