Organic electroluminescence device and display device

• US 6,831,408 B2
• Filed: 03/24/2003
• Issued: 12/14/2004
• Est. Priority Date: 07/29/1999
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Yamada, Jiro, Hirano, Takashi, Asano, Mitsuru, Chiba, Yasuhiro
• Primary Examiner(s): Patel, Nimeshkumar D.
• Assistant Examiner(s): Santiago, Mariceli
• Application Number:
  US10/395,550
• Publication Number:
  US 20030171060A1
• Time in Patent Office: 631 Days
• Field of Search: 45/24, 45/25, 313/504, 313/506, 313/509, 313/500, 428/690
• US Class Current: 313/504
• CPC Class Codes: G09G 2300/0842 forming a memory circuit, e.g. a dynamic memory with one capacitor
• CPC Class Codes: G09G 3/3233 with pixel circuitry controlling the current through the light-emitting element
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/818 Reflective anodes, e.g. ITO combined with thick metallic layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/80518 Reflective anodes, e.g. ITO combined with thick metallic layers

Abstract

An organic electroluminescence device having an anode structure on the lower surface which is effective for taking out light efficiently from the cathode on the upper surface in which the organic electroluminescence device comprises an anode, a cathode and an organic layer put between both of them. The organic layer contains an organic light emitting layer that emits light by re-combination of holes supplied from the cathode A and electrons supplied from the cathode. The cathode comprises a laminate structure of an electron injecting metal layer, and a transparent conductive layer ultra thin film which is basically light permeable. The anode contains a metal belonging to the group V or group VI of the periodical table to at least a portion in contact with the organic layer and is basically light reflective. The anode metal is selected from chromium, molybdenum, tungsten, tantalum and niobium. The anode metal has a work function of 4.8 eV or lower.

Claims

1. A method of manufacturing an electroluminescence device, the method comprising the steps of:

forming a first electrode having a metal belonging to the group V or the group VI of the periodic table on a substrate;

forming an organic light emitting layer so as to be in contact with the metal; and

forming a second electrode on the organic light emitting layer,

wherein the first electrode has a reflectance of 40% or higher, and

wherein the metal includes at least one of niobium, tantalum, and molybdenum.

2. A manufacturing method as claimed in claim 1, wherein the first electrode is in a tapered type.

3. A manufacturing method as claimed in claim 1, wherein the metal has a work function of 4.8 eV or lower.

4. A manufacturing method as claimed in claim 1, wherein first electrode has a higher reflectance than the second electrode.

5. A manufacturing method as claimed in claim 1, wherein the first electrode comprises an alloy.

6. A manufacturing method as claimed in claim 1, wherein the organic light remitting layer has a hole transporting layer for transporting holes injected from the first electrode.

7. A manufacturing method as claimed in claim 1, wherein the second electrode comprises a layer comprising a metal and a transparent material.

8. A method of manufacturing an electroluminescence device, the method comprising the steps of:

forming a first electrode having a metal belonging to the group V or group VI of the periodic table on a substrate;

forming an insulative film on the first electrode;

forming an opening in the insulative film and exposing the metal;

forming an organic light emitting layer so as to be in contact with the metal through the opening; and

forming a second electrode on the organic light emitting layer,

wherein the first electrode has a reflectance of 40% or higher, and

wherein the metal includes at least one of niobium, tantalum, and molybdenum.

9. A manufacturing method as claimed in claim 8, wherein the first electrode is in a tapered type.

10. A manufacturing method as claimed in claim 8, wherein the a metal has work function of 4.8 eV or lower.

11. A manufacturing method as claimed in claim 8, wherein the first electrode has a higher reflectance than the second electrode.

12. A manufacturing method as claimed in claim 8, wherein the first electrode comprises an alloy.

13. A manufacturing method as claimed in claim 8, wherein the organic light remitting layer has a hole transporting layer for transporting holes injected from the first electrode.

14. A manufacturing method as claimed in claim 8, wherein the second electrode comprises a layer comprising a metal and a transparent material.

15. A method of manufacturing an electroluminescence device, the method comprising the steps of:

forming a gate electrode on a substrate;

forming a gate insulative film on the gate electrode;

forming a semiconductor layer on the gate insulative film;

forming an insulative film on the semiconductor layer;

forming a first electrode having a metal belonging to the group V or group VI of the periodic table on the insulative film;

forming an organic light emitting layer so as to be in contact with the metal; and

forming a second electrode on the organic light emitting layer,

wherein the first electrode has a reflectance of 40% or higher, and

wherein the metal includes at least one niobium, tantalum, and molybdenum.

16. A manufacturing method as claimed in claim 15, wherein the first electrode is in a tapered type.

17. A manufacturing method as claimed in claim 15, wherein the metal has a work function of 4.8 eV or lower.

18. A manufacturing method as claimed in claim 15, wherein the first electrode has a higher reflectance than the second electrode.

19. A manufacturing method as claimed in claim 15, wherein the first electrode comprises an alloy.

20. A manufacturing method as claimed in claim 15, wherein the organic light remitting layer has a hole transporting layer for transporting holes injected from the first electrode.

21. A manufacturing method as claimed in claim 15, wherein the second electrode comprises a layer comprising a metal and a transparent material.

22. A manufacturing method as claimed in claim 15, wherein the substrate comprises glass and the gate insulative film has a thickness less than that of the insulative film.