Magnetic differential field sensor using hysteresis field in AMR films
First Claim
1. A method for detecting a magnetic field utilizing a magnetoresistor of a magnetic sensor, said method comprising the steps of:
- calculating a normalized magnetoresistance associated with said magnetoresistor, wherein said magnetoresistor comprises an initial magnetization direction thereof;
permitting said magnetic field to exceed an ability of said magnetoresistor to remain pointed in said initial magnetization direction, thereby enabling said magnetoresistor to experience a magnetization reversal thereof; and
placing said normalized resistance into a new state in response to said magnetization reversal thereof, thereby permitting said normalized resistance to be utilized as a switch thereof and allowing said magnetic sensor to detect changes in said magnetic field associated with said magnetoresistor.
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Accused Products
Abstract
A method and system for detecting a magnetic field utilizing a magnetoresistor of a magnetic sensor is disclosed. A normalized magnetoresistance associated with the magnetoresistor can be calculated such that the magnetoresistor comprises an initial magnetization direction thereof. The magnetic field is generally permitted to exceed an ability of the magnetoresistor to remain pointed in the initial magnetization direction, thereby enabling the magnetoresistor to experience a magnetization reversal thereof. The normalized resistance can be placed into a new state in response to the magnetization reversal thereof, thereby permitting the normalized resistance to be utilized as a switch thereof and allowing the magnetic sensor to detect changes in the magnetic field associated with the magnetoresistor.
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Citations
23 Claims
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1. A method for detecting a magnetic field utilizing a magnetoresistor of a magnetic sensor, said method comprising the steps of:
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calculating a normalized magnetoresistance associated with said magnetoresistor, wherein said magnetoresistor comprises an initial magnetization direction thereof;
permitting said magnetic field to exceed an ability of said magnetoresistor to remain pointed in said initial magnetization direction, thereby enabling said magnetoresistor to experience a magnetization reversal thereof; and
placing said normalized resistance into a new state in response to said magnetization reversal thereof, thereby permitting said normalized resistance to be utilized as a switch thereof and allowing said magnetic sensor to detect changes in said magnetic field associated with said magnetoresistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for detecting a magnetic field utilizing a magnetoresistor of a magnetic sensor, said method comprising the steps of:
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calculating a normalized magnetoresistance associated with said magnetoresistor, wherein said magnetoresistor comprises an initial magnetization direction thereof;
permitting said magnetic field to exceed an ability of said magnetoresistor to remain pointed in said initial magnetization direction, thereby enabling said magnetoresistor to experience a magnetization reversal thereof;
altering said normalized resistance in response to a change in said magnetic field, wherein said magnetic field comprises a one-dimensional zero crossing magnetic field;
placing said normalized resistance into a new state in response to said magnetization reversal thereof, thereby permitting said normalized resistance to be utilized as a switch thereof and allowing said magnetic sensor to detect changes in said magnetic field associated with said magnetoresistor; and
identifying a switching field associated with said magnetization reversal thereof.
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12. A magnetic sensor for detecting a magnetic field, said magnetic sensor comprising:
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a magnetoresistor comprising an initial magnetization direction thereof, such that a normalized magnetoresistance associated with said magnetoresistor is calculable thereof;
a magnetic field altering mechanism which permits said magnetic field to exceed an ability of said magnetoresistor to remain pointed in said initial magnetization direction, thereby enabling said magnetoresistor to experience a magnetization reversal thereof; and
wherein said normalized resistance is placed into a new state in response to said magnetization reversal thereof, thereby permitting said normalized resistance to be utilized by the magnetic sensor as a switch thereof and allowing the magnetic sensor to detect changes in said magnetic field associated with said magnetoresistor. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A magnetic sensor for detecting a magnetic field, said magnetic sensor comprising:
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a magnetoresistor comprising an initial magnetization direction thereof, such that a normalized magnetoresistance associated with said magnetoresistor is calculable thereof;
a magnetic field altering mechanism which permits said magnetic field to exceed an ability of said magnetoresistor to remain pointed in said initial magnetization direction, thereby enabling said magnetoresistor to experience a magnetization reversal thereof;
wherein said normalized resistance is alterable in response to a change in said magnetic field, such that said magnetic field comprises a one-dimensional zero crossing magnetic field;
wherein said magnetic field associated with said magnetoresistor comprises a sinusoidally varying field; and
wherein said normalized resistance is placed into a new state in response to said magnetization reversal thereof, thereby permitting said normalized resistance to be utilized as a switch thereof and allowing said magnetic sensor to detect changes in said magnetic field associated with said magnetoresistor.
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23. A sensor for detecting a magnetic field, said sensor comprising:
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a permalloy magnetoresistor comprising an initial magnetization direction thereof, such that a normalized magnetoresistance associated with said permalloy magnetoresistor is calculable thereof;
a magnetic field altering mechanism that permits said magnetic field to exceed an ability of said permalloy magnetoresistor to remain pointed in said initial magnetization direction, thereby enabling said permalloy magnetoresistor to experience a magnetization reversal thereof;
a converter for converting a sinusoidally varying field into a pulse train; and
wherein said normalized resistance is automatically placed into a new state in response to said magnetization reversal thereof, thereby permitting said normalized resistance to be utilized as a switch thereof which permits said sensor to detect changes in said magnetic field associated with said magnetoresistor via said pulse train.
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Specification