Magnetic sensor having adjusted specific resistance distribution of first magnetic layer of free magnetic layer of multi-layered ferri-structure

• US 6,831,817 B2
• Filed: 10/09/2002
• Issued: 12/14/2004
• Est. Priority Date: 10/09/2001
• Status: Active Grant

• Current Assignee: TDK Corporation
• Original Assignee: ALPS Electric Company Limited (Alps Alpine Co., Ltd.)
• Inventors: Hasegawa, Naoya, Umetsu, Eiji
• Primary Examiner(s): HEINZ, ALLEN J
• Application Number:
  US10/267,201
• Publication Number:
  US 20030072111A1
• Time in Patent Office: 797 Days
• Field of Search: 360/324.12
• US Class Current: 360/324.12
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/0008 Magnetic conditionning of heads, e.g. biasing
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction

Abstract

A first magnetic layer includes an area which contains an element X (e.g., Cr) and is present in position toward the side of a nonmagnetic intermediate layer from the side near an opposite surface of the first magnetic layer away from an interface between the first magnetic layer and the nonmagnetic intermediate layer, and an area which is partly located in a region from the interface between the first magnetic layer and the nonmagnetic intermediate layer toward the opposite surface of the first magnetic layer and which does not contain the element X. Such an arrangement is able to improve a resistance change rate, to increase a coupling magnetic field based on the RKKY interaction, and to realize satisfactory control of magnetization of a free magnetic layer.

Claims

1. A magnetic sensor including a laminate comprising an antiferromagnetic layer, a pinned magnetic layer formed in contact with said antiferromagnetic layer, and a free magnetic layer formed in an opposing relation to said pinned magnetic layer with a nonmagnetic material layer interposed between said free magnetic layer and said pinned magnetic layer,

said free magnetic layer being of a multilayered ferri-structure comprising a second magnetic layer formed in contact with an interface between said free magnetic layer and said nonmagnetic material layer, and a first magnetic layer formed in an opposing relation to said second magnetic layer with a nonmagnetic intermediate layer interposed therebetween,

said first magnetic layer including an area which contains an element X wherein X represents at least one element selected from among Cr, Ti, V, Zr, Nb, Mo, Hf, Ta and W and which is present in position toward a side of said nonmagnetic intermediate layer from a side near a surface of said first magnetic layer away from an interface between said first magnetic layer and said nonmagnetic intermediate layer, and an area which is partly located in a region from the interface between said first magnetic layer and said nonmagnetic intermediate layer toward the surface of said first magnetic layer away from the interface and which does not contain the element X.

2. A magnetic sensor according to claim 1, wherein said first magnetic layer is formed primarily of a CoFe alloy, said area containing the element X is formed of a CoFeX alloy, and said area not containing the element X is formed of a CoFe alloy.

3. A magnetic sensor according to claim 1, wherein said first magnetic layer is formed primarily of a CoFeNi alloy, said area containing the element X is formed of a CoFeNiX alloy, and said area not containing the element X is formed of a CoFeNi alloy.

8. A magnetic sensor according to claim 1, wherein said first magnetic layer includes an area in which a content of the element X gradually decreases toward the interface between said first magnetic layer and said nonmagnetic intermediate layer from the side near the surface of said first magnetic layer away from the interface between said first magnetic layer and said nonmagnetic intermediate layer.

12. A magnetic sensor according to claim 2, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is larger than 0 but not larger than 0.61.

13. A magnetic sensor according to claim 2, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is larger than 0 but not larger than 0.36.

14. A magnetic sensor according to claim 2, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.26 but not larger than 0.82.

15. A magnetic sensor according to claim 2, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.12 but not larger than 0.61.

16. A magnetic sensor according to claim 2, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.26 but not larger than 0.61.

17. A magnetic sensor according to claim 2, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.26 but not larger than 0.36.

18. A magnetic sensor according to claim 1, wherein a composition ratio of the element X is not smaller than 3 at % but not larger than 15 at %.

19. A magnetic sensor according to claim 2, wherein the CoFe and CoFeX alloys contain Co_Y Fe_100-Y and an atomic percentage Y of Co_Y and Fe_100-Y is not smaller than 85% but not larger than 96%.

20. A magnetic sensor according to claim 3, wherein a composition ratio of Ni is not smaller than 0.5 at % but not larger than 5 at %.

21. A magnetic sensor according to claim 1, wherein second antiferromagnetic layers are disposed on the side near the surface of said first magnetic layer away from the interface between said first magnetic layer and said nonmagnetic intermediate layer with a predetermined spacing left between said second antiferromagnetic layers in a track-width direction.

22. A magnetic sensor according to claim 1, wherein bias layers are disposed on both sides of said free magnetic layer in a track-width direction.

23. A magnetic sensor according to claim 21, wherein an electrode layer is disposed on a side near a surface of each of said second antiferromagnetic layers away from an interface between said second antiferromagnetic layer and said first magnetic layer, and an electrical current flows in a direction parallel to a film surface of each layer of said laminate.

24. A magnetic sensor according to claim 22, wherein electrode layers are disposed on said bias layers and an electrical current flows in a direction parallel to a film surface of each layer of said laminate.

25. A magnetic sensor according to claim 1, wherein electrode layers are disposed on and under said magnetic sensor, and an electrical current flows in a direction perpendicular to a film surface of each layer of said laminate.

26. A magnetic sensor according to claim 25, wherein said upper electrode layer disposed on said laminate is an upper shield layer formed of a magnetic material.

27. A magnetic sensor according to claim 25, wherein said free magnetic layer is formed on an upper side of said antiferromagnetic layer and second antiferromagnetic layers are disposed on said first magnetic layer constituting said free magnetic layer with a predetermined spacing left between said second antiferromagnetic layers in a track-width direction;

first insulating layers are disposed on said second antiferromagnetic layers and second insulating layers are disposed on inner end surfaces of both said second antiferromagnetic layers and said first insulating layers; and

said upper electrode layer is formed to cover said first insulating layers and said second insulating layers and to fill the spacing left between said second antiferromagnetic layers.

28. A magnetic sensor according to claim 27, wherein said first insulating layers and said second insulating layers are formed separately from each other.

29. A magnetic sensor according to claim 25, wherein said lower electrode layer disposed under said laminate is a lower shield layer formed of a magnetic material.

30. A magnetic sensor according to claim 25, wherein said free magnetic layer is formed on an upper side of said antiferromagnetic layer and second antiferromagnetic layers are disposed on said first magnetic layer constituting said free magnetic layer with a predetermined spacing left between said second antiferromagnetic layers in a track-width direction;

and

a projection projecting in a multilayered direction of said laminate is formed at a center of said lower electrode layer in the track-width direction, said projection having an upper surface contacting a lower surface of said laminate, and insulating layers are disposed between both end portions of said lower electrode layer in the track-width direction and said laminate.

31. A magnetic sensor according to claim 30, wherein the upper surface of said projection and upper surfaces of said insulating layers disposed on both the end portions of said lower electrode layer are flush with each other.

32. A magnetic sensor according to claim 1, wherein said nonmagnetic material layer is formed of a nonmagnetic electrically conductive material.

33. A magnetic sensor according to claim 25, wherein said nonmagnetic material layer is formed of an insulating material.

34. A magnetic sensor according to claim 3, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is larger than 0 but not larger than 0.61.

35. A magnetic sensor according to claim 3, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is larger than 0 but not larger than 0.36.

36. A magnetic sensor according to claim 3, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.26 but not larger than 0.82.

37. A magnetic sensor according to claim 3, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.12 but not larger than 0.61.

38. A magnetic sensor according to claim 3, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.26 but not larger than 0.61.

39. A magnetic sensor according to claim 3, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.26 but not larger than 0.36.

40. A magnetic sensor according to claim 3, wherein a composition ratio of the element X is not smaller than 3 at % but not larger than 15 at %.

41. A magnetic sensor according to claim 3, wherein the CoFe and CoFeX alloys contain Co_YFe_100-Y and an atomic percentage Y of Co_Y and Fe_100-Y is not smaller than 85% but not larger than 96%.

51. A magnetic sensor according to claim 12, wherein a composition ratio of Ni is not smaller than 0.5 at % but not larger than 5 at %.

4. A magnetic sensor including a laminate comprising an antiferromagnetic layer, a pinned magnetic layer formed in contact with said antiferromagnetic layer, and a free magnetic layer formed in an opposing relation to said pinned magnetic layer with a nonmagnetic material layer interposed between said free magnetic layer and said pinned magnetic layer,

said free magnetic layer being of a multilayered ferri-structure comprising a second magnetic layer formed in contact with an interface between said free magnetic layer and said nonmagnetic material layer, and a first magnetic layer formed in an opposing relation to said second magnetic layer with a nonmagnetic intermediate layer interposed therebetween,

said first magnetic layer containing an element X wherein X represents at least one element selected from among Cr, Ti, V, Zr, Nb, Mo, Hf, Ta and W,

a content of the element X being larger on a side near an a surface of said first magnetic layer away from an interface between said first magnetic layer and said nonmagnetic intermediate layer than on a side near the interface between said first magnetic layer and said nonmagnetic intermediate layer.

5. A magnetic sensor according to claim 4, wherein said first magnetic layer is formed of a magnetic material made of a CoFe alloy and containing the element X.

6. A magnetic sensor according to claim 4, wherein said first magnetic layer is formed of a magnetic material made of a CoFeNi alloy and containing the element X.

7. A magnetic sensor according to claim 4, wherein the content of the element X on the side near the surface of said first magnetic layer away from the interface between said first magnetic layer and said nonmagnetic intermediate layer is not smaller than 3 at % but not larger than 15at %.

42. A magnetic sensor according to claim 6, wherein a composition ratio of Ni is not smaller than 0.5 at % but not larger than 5 at %.

61. A magnetic sensor according to claim 5, wherein the CoFe and CoFeX alloys contain Co_YFe_100-Y and an atomic percentage Y of Co_Y and Fe_100-Y is not smaller than 85% but not larger than 96%.

62. A magnetic sensor according to claim 6, wherein the CoFe and CoFeX alloys contain Co_YFe_100-Y and an atomic percentage Y of Co_Y and Fe_100-Y is not smaller than 85% but not larger than 96%.

9. A magnetic sensor including a laminate comprising an antiferromagnetic layer, a pinned magnetic layer formed in contact with said antiferromagnetic layer, and a free magnetic layer formed in an opposing relation to said pinned magnetic layer with a nonmagnetic material layer interposed between said free magnetic layer and said pinned magnetic layer,

said free magnetic layer being of a multilayered ferri-structure comprising a second magnetic layer formed in contact with an interface between said free magnetic layer and said nonmagnetic material layer, and a first magnetic layer formed in an opposing relation to said second magnetic layer with a nonmagnetic intermediate layer interposed therebetween,

said first magnetic layer being made up of at least two magnetic layers, one of said two magnetic layers, which is positioned on a side near a surface of said first magnetic layer away from an interface between said first magnetic layer and said nonmagnetic intermediate layer, being formed of a magnetic material containing an element X wherein X represents at least one element selected from among Cr, Ti, V, Zr, Nb, Mo, Hf, Ta and W, the other of said two magnetic layers, which is positioned on a side contacting the interface between said first magnetic layer and said nonmagnetic intermediate layer, being formed of a magnetic material not containing the element X.

10. A magnetic sensor according to claim 9, wherein, of said two magnetic layers, the one positioned on the side near the surface of said first magnetic layer away from the interface between said first magnetic layer and said nonmagnetic intermediate layer is formed of a CoFeX alloy, and the other positioned on the side contacting the interface between said first magnetic layer and said nonmagnetic intermediate layer is formed of a CoFe alloy.

11. A magnetic sensor according to claim 9, wherein, of said two magnetic layers, the one positioned on the side near the surface of said first magnetic layer away from the interface between said first magnetic layer and said nonmagnetic intermediate layer is formed of a CoFeNiX alloy, and the other positioned on the side contacting the interface between said first magnetic layer and said nonmagnetic intermediate layer is formed of a CoFeNi alloy.

43. A magnetic sensor according to claim 10, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is larger than 0 but not larger than 0.61.

44. A magnetic sensor according to claim 10, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is larger than 0 but not larger than 0.36.

45. A magnetic sensor according to claim 10, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.26 but not larger than 0.82.

46. A magnetic sensor according to claim 10, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.12 but not larger than 0.61.

47. A magnetic sensor according to claim 10, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.26 but not larger than 0.61.

48. A magnetic sensor according to claim 10, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.26 but not larger than 0.36.

49. A magnetic sensor according to claim 10, wherein a composition ratio of the element X is not smaller than 3 at % but not larger than 15 at %.

50. A magnetic sensor according to claim 10, wherein the CoFe and CoFeX alloys contain Co_YFe_100-Y and an atomic percentage Y of Co_Y and Fe_100-Y is not smaller than 85% but not larger than 96%.

52. A magnetic sensor according to claim 11, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is larger than 0 but not larger than 0.61.

53. A magnetic sensor according to claim 11, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is larger than 0 but not larger than 0.36.

54. A magnetic sensor according to claim 11, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.26 but not larger than 0.82.

55. A magnetic sensor according to claim 11, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.12 but not larger than 0.61.

56. A magnetic sensor according to claim 11, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.26 but not larger than 0.61.

57. A magnetic sensor according to claim 11, wherein when said area containing the element X is formed of a CoFeX alloy or a CoFeNiX alloy and said area not containing the element X is formed of a CoFe alloy or a CoFeNi alloy, a film thickness ratio of (film thickness of the CoFeX alloy/film thickness of said first magnetic layer) or of (film thickness of the CoFeNiX alloy/film thickness of said first magnetic layer) is not smaller than 0.26 but not larger than 0.36.

58. A magnetic sensor according to claim 11, wherein a composition ratio of the element X is not smaller than 3 at % but not larger than 15 at %.

59. A magnetic sensor according to claim 11, wherein the CoFe and CoFeX alloys contain Co_YFe_100-Y and an atomic percentage Y of CO_Y and Fe_100-Y is not smaller than 85% but not larger than 96%.

60. A magnetic sensor according to claim 11, wherein a composition ratio of Ni is not smaller than 0.5 at % but not larger than 5 at %.