Method of fabricating and repairing ceramic components for semiconductor fabrication using plasma spray process

• US 6,833,279 B2
• Filed: 12/04/2002
• Issued: 12/21/2004
• Est. Priority Date: 12/07/2001
• Status: Active Grant

• Current Assignee: KoMiCo Ltd.
• Original Assignee: Komico Co., Ltd.
• Inventors: Choi, Jin-Sik
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US10/309,325
• Publication Number:
  US 20030129772A1
• Time in Patent Office: 748 Days
• Field of Search: 438/4, 438/763, 438/778, 438/974
• US Class Current: 438/4
• CPC Class Codes: H01L 21/481 Insulating layers on insulating parts, with or without metallisation
• CPC Class Codes: Y10S 438/974 Substrate surface preparation

Abstract

Provided is a method of fabricating and repairing ceramic components for semiconductor fabrication, through which erosion and polymer deposition occurring on ceramic components for semiconductor fabrication are decreased by modifying the dielectric surface of a component having an electrical insulation characteristic so that the ceramic components can be repaired after being used. The method includes activating a surface layer of a component, which is manufactured by sintering a ceramic, and depositing a dielectric coating layer on the surface layer of the ceramic component using a plasma spray process; when the dielectric coating layer is damaged as the ceramic component is used for semiconductor fabrication, removing the dielectric coating layer; and repairing the ceramic component by depositing a dielectric coating layer on the surface layer of the ceramic component from which the damaged dielectric coating layer has been removed.

Claims

1. A method of manufacturing and repairing a ceramic component for semiconductor fabrication, the method comprising:

activating a surface layer of a ceramic component, which is manufactured by sintering a ceramic, and depositing a dielectric coating layer on the surface layer of the ceramic component using a plasma spray process, wherein the step of depositing the dielectric coating layer on the surface layer of the ceramic component comprises depositing one material selected from the group consisting of alumina, zirconia, yttria, and YAG on the surface layer of the ceramic component;

when the dielectric coating layer is damaged as the ceramic component is used for semiconductor fabrication, removing the dielectric coating layer; and

repairing the ceramic component by depositing a dielectric coating layer on the surface layer of the ceramic component from which the damaged dielectric coating layer has been removed.

2. The method of claim 1, wherein the repairing the ceramic component comprises depositing one material selected from the group consisting of alumina, zirconia, yttria, and YAG on the surface layer of the ceramic component.