Method for making semiconductor device including band-engineered superlattice
First Claim
1. A method for making a semiconductor device comprising:
- forming a superlattice comprising a plurality of stacked groups of layers; and
each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon;
the groups of layers arranged in an alternating pattern of first and second groups of layers, with each first group of layers comprising three base semiconductor monolayers, and each second group of layers comprising five base semiconductor monolayers;
the energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
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Abstract
A method is for making a semiconductor device by forming a superlattice that, in turn, includes a plurality of stacked groups of layers. The method may also include forming regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions so that the superlattice may have a higher charge carrier mobility in the parallel direction than would otherwise occur. The superlattice may also have a common energy band structure therein.
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Citations
28 Claims
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1. A method for making a semiconductor device comprising:
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forming a superlattice comprising a plurality of stacked groups of layers; and
each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon;
the groups of layers arranged in an alternating pattern of first and second groups of layers, with each first group of layers comprising three base semiconductor monolayers, and each second group of layers comprising five base semiconductor monolayers;
the energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for making a semiconductor device comprising:
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forming a superlattice comprising a plurality of stacked groups of layers; and
each group of layers of the superlattice comprising a plurality of stacked silicon atomic layers defining a silicon portion and an energy band-modifying layer thereon;
the groups of layers arranged in an alternating pattern of first and second groups of layers, with each first group of layers comprising three base silicon monolayers, and each second group of layers comprising five base silicon monolayers;
the energy-band modifying layer comprising at least one oxygen atomic layer constrained within a crystal lattice of adjacent silicon portions. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification
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- Resources
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Current AssigneeAtomera Incorporated
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Original AssigneeRJ Mears LLC (Atomera Incorporated)
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InventorsDukovski, Ilija, Hytha, Marek, Yiptong, Jean Augustin Chan Sow Fook, Kreps, Scott A., Mears, Robert J.
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Primary Examiner(s)Mulpuri, Savitri
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Application NumberUS10/716,783Publication NumberTime in Patent Office398 DaysField of Search438/149, 438/151-153, 438/162, 438/217, 438/22-228, 438/299-301, 438/479-508, 438/47, 438/787US Class Current438/162CPC Class CodesH01L 21/823807 with a particular manufactu...H01L 29/1054 with a variation of the com...H01L 29/155 Comprising only semiconduct...H01L 29/7833 with lightly doped drain or...
