Parallel and selective growth method of carbon nanotube on the substrates for electronic-spintronic device applications

• US 6,833,558 B2
• Filed: 08/22/2001
• Issued: 12/21/2004
• Est. Priority Date: 08/23/2000
• Status: Expired due to Fees

• Current Assignee: Korea Advanced Institute of Science and Technology
• Original Assignee: Korea Advanced Institute of Science and Technology
• Inventors: Lee, Yun Hi, Jang, Yoon Taek, Ju, Byeong Kwon
• Primary Examiner(s): HENDRICKSON, STUART L
• Application Number:
  US09/933,833
• Publication Number:
  US 20020025374A1
• Time in Patent Office: 1,217 Days
• Field of Search: 423/447.3, 257/49, 257/12
• US Class Current: 257/49
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C01B 2202/08 Aligned nanotubes
• CPC Class Codes: C01B 32/162 characterised by catalysts
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C30B 25/00 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/605 Products containing multiple oriented crystallites, e.g. columnar crystallites
• CPC Class Codes: D01F 9/12 Carbon filaments; Apparatus specially adapted for the manufacture thereof
• CPC Class Codes: H10K 10/00 Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers integrated devices or assemblies of multiple devices H10K19/00
• CPC Class Codes: H10K 10/701 Organic molecular electronic devices
• CPC Class Codes: H10K 85/221 Carbon nanotubes
• CPC Class Codes: Y10S 977/842 for carbon nanotubes or fullerenes

Abstract

A selective and parallel growth method of carbon nanotube for electronic-spintronic device applications which directly grows a carbon nanotube on a wanted position toward a horizontal direction comprises the steps of: forming an insulating film on a board; forming fine patterns of catalyst metal layer including a contact electrode pad on the insulating film, forming a growth barrier layer for preventing vertical growth on upper part of the catalyst metal layer; and directly growing the carbon nanotube between the catalyst patterns.

Claims

1. A parallel and selective growth method of carbon nanotube on the substrates for electronic-spintronic device applications comprising:

forming an insulating film on a substrate;

forming patterns of catalyst metal layer including a contact electrode pad on the insulating film;

forming a growth barrier layer for vertical growth on upper part of the catalyst metal layer; and

directly growing a carbon nanotube which joins catalyst patterns,

wherein the contact electrode pad is formed before growing the carbon nanotube.

2. The method according to claim 1, wherein the insulating film is formed by using an oxidation method and CVD (Chemical Vapor Deposition) method in an electric furnace of 1100°

C.

3. The method according to claim 1, wherein the insulating film is formed to have thickness of 50˜

500 nm.

4. The method according to claim 1, wherein the catalyst metal uses at least one among Ni, Ni/Ti (or Nb), Co, Co/Ti (or Nb), Fe, Fe/Ti (or Nb), (Ni/Co)n, (Co/Ni)n, and (Co/Ni/Co)n, (Ni/Co/Ni)n wherein n is a positive integer, and Co/MgO.

5. The method according to claim 1, wherein the catalyst metal has a purity higher than 99.9%, and is formed to have 80˜

400 nm thickness in the temperature range of normal temperature ˜

150°

C.

6. The method according to claim 1, wherein the CNT is grown in C₂H₂ (or C₂H₄)/N₂(He, Ar), H₂, NH₃ atmosphere with 10˜

5000 torr of gas pressure for 10˜

3000 seconds.

7. The method according to claim 1, wherein the CNT is grown using a thermochemistry gas phase deposition process (or a plasma process), and the temperature of a processing chamber wherein the CNT is grown is to be 500˜

900°

C. (error range ±

10°

C. at both ends).

8. The method according to claim 1, wherein the CNT growth uses an amorphous carbon thin film and a graphite as a self-catalyst, and the growth speed is 100 nm/minute.

9. The method according to claim 1, wherein a clearance between the catalyst metal patterns is within 50 nm˜

10 μ

m.

10. The method according to claim 1, wherein a diameter of the CNT is within 1˜

50 nm.

11. The method according to claim 1, wherein the contact electrode uses normal metals, superconductive metals, or magnetic metals.

12. The method according to claim 1, wherein one among an oxide film, a nitride film, a layered structure of the oxide film and the nitride film, or SiO₂, Si₃N₄, SiO₂—

Si₃N₄, Al₂O₃ is used as the growth barrier layer for vertical growth.

13. The method according to claim 1, wherein as the growth barrier layer for vertical growth, Ti, Pt, W, Nb, V, Au or a compound metal of combinations thereof is used.

14. The method according to claim 12, wherein thickness of the growth barrier layer is varied within 20˜

30 nm in order to embody a top gate device.

15. The method according to claim 13, wherein the growth barrier layer comprises an electrode for eletronic- and spintronic devices.

16. The method of claim 1, wherein the catalyst metal layer including the contact electrode pad and the growth barrier layer are formed in one step.