Optically confined birefringent chalcopyrite heterostructure devices and operating methods

• US 6,834,149 B1
• Filed: 08/27/2002
• Issued: 12/21/2004
• Est. Priority Date: 02/09/1999
• Status: Expired due to Fees

• Current Assignee: Xoetronics LLC
• Original Assignee: Xoetronics LLC
• Inventors: Krivoshik, David Peter, Madarasz, Frank L., Dietz, Nikolaus
• Primary Examiner(s): Ullah, Akm Enayet
• Application Number:
  US10/228,777
• Time in Patent Office: 847 Days
• Field of Search: 385/120, 385/121.1, 385/22, 385/123, 385/12-15, 385/4, 385/126, 385/128, 385/147, 435/6, 435/91.2, 422/55, 654/09
• US Class Current: 385/122
• CPC Class Codes: G01N 21/7703 using reagent-clad optical fibres or optical waveguides using measurement of total internal reflection or attenuated total reflection G01N21/552; optical fibres or waveguides per se G02B
• CPC Class Codes: G01N 21/774 the reagent being on a grating or periodic structure
• CPC Class Codes: G02B 2006/12147 Coupler
• CPC Class Codes: G02B 6/10 of the optical waveguide type G02B6/02, G02B6/24 take precedence; devices or arrangements for the control of light by electric, magnetic, electro-magnetic or acoustic means G02F1/00; transferring the modulation of modulated light G02F2/00; optical logic elements G02F3/00; optical analogue/digital converters G02F7/00
• CPC Class Codes: G02B 6/125 Bends, branchings or intersections
• CPC Class Codes: G02B 6/42 Coupling light guides with opto-electronic elements

Abstract

An optical quantitative detection device comprising: an optical quantitative detection device comprising: a nonlinear/birefringent waveguide sensor with a top surface for interacting with a target molecule, wherein optical excitation of the sensor enables quantitative, spectral discrimination of the target molecule.

Claims

1. An optical quantitative detection device comprising:

a nonlinear waveguide sensor having a top cladding layer with a top surface for interacting with a target molecule;

a second waveguide;

a second cladding layer optically coupling the nonlinear waveguide sensor to the second waveguide, wherein optical excitation of the sensor and optical excitation of the second waveguide enables quantitative spectral discrimination of a target molecule.

2. The optical quantitative detection device as recited in claim 1 further comprising a molecule specific sensitized surface layer on top of the cladding layer whereby a molecule specific binding of a target molecule is provided.

3. The optical quantitative detection device as recited in claim 1 wherein a nonlinear/birefringent waveguided heterostructure is used for frequency agile infrared wavelength generation.

4. The optical quantitative detection device as recited in claim 1 wherein interface induced phase and amplitude changes are coupled back in the underlying nonlinear waveguide for analysis.

5. The optical quantitative detection device as recited in claim 1 wherein interface/surface induces amplitude and phase shifts of an evanescence wave is coupled nonlinearly to another wave(s) propagating in an adjacent, birefringent waveguide(s).

6. The optical quantitative detection device as recited in claim 1 wherein an evanescence wave is coupled nonlinearly to another wave propagating in an adjacent birefringent waveguide.

7. The optical quantitative detection device as recited in claim 1 wherein adjacent waveguides are coupled nonlinearly between mixed modes between waveguides.

8. The optical quantitative detection device as recited in claim 1 wherein induced spectral amplitude and phase shifts couple nonlinear with adjacent waveguided, birefringent layer(s) and modifies phase matching conditions for frequencies generated in an optical parameter oscillator (OPO) process.

9. The optical quantitative detection device as recited in claim 1 wherein the nonlinear waveguide sensor further comprises a nonlinear waveguided layer composed of a multiple-quantum well (QW) structures containing at least one chalcopyrite compound.

10. The optical quantitative detection device as recited in claim 1 wherein the nonlinear waveguide sensor further comprises a nonlinear waveguided layer composed of ordered and/or disordered nano-composites that result in a nonlinear, birefringent layer, even though the compounds for themselves have linear optical properties.

11. The optical quantitative detection device as recited in claim 1 wherein the nonlinear waveguide sensor further comprises a nonlinear waveguided layer composed of ordered and/or disordered nano-composites containing at least one chalcopyrite compound.

12. The optical quantitative detection device as recited in claim 1 wherein the nonlinear waveguided heterostructures are intentionally doped (nonlinear active medium as well as surrounding cladding layers) to form electrical junctions, which are able to control the NLE and NLO properties of the device structure.

13. The optical quantitative detection device as recited in claim 1 wherein the nonlinear waveguided layers comprise chalcopyrite alloys Zn(Ge_1-xSi_x)P₂ on GaP, or Si, with lattice-matching cladding layers made from compositionally controlled GaP_1-xAl_x or ZnS_1-xSe_x or CdF layers.

14. The optical quantitative detection device as recited in claim 1 wherein the nonlinear waveguided layers comprise chalcopyrite alloys Zn(Ge_1-xSi_x)As₂ or ZnGe(As_2-yP_y) on GaAs, with lattice-matching cladding layers formed by compositionally controlled GaAs_1-xAl_x layers.

15. The optical quantitative detection device as recited in claim 1 wherein the nonlinear waveguided layers comprise birefringent chalcopyrite alloys with cladding layers formed by compositionally controlled dielectric and/or organic layers providing optical guidance.

16. The optical quantitative detection device as recited in claim 1 wherein the nonlinear waveguided layers comprise self-assembled and/or nano-scale engineered chalcopyrite nano-composites containing II-IV-V₂ chalcopyrite compounds such as Zn(Ge_1-xSi_x)P₂, Zn(Ge_1-xSi_x)As₂, ZnGe(As_2-yP_y), or CdGe(As_2-yP_y) on embedded in closely lattice-matching III-V, II-VI or I-VII compounds and covered by optically guiding cladding layer(s).

17. The optical quantitative detection device as recited in claim 1 wherein the nonlinear waveguided layers comprise self-assembled and/or nano-scale engineered chalcopyrite nano-composites containing II-IV-V₂ chalcopyrite compounds embedded in strained multilayers made from III-V, II-VI or I-VII compound semiconductors.

18. The optical quantitative detection device as recited in claim 1 wherein the nonlinear waveguided layers comprise doping/alloying of the nonlinear active medium made up of II-iV-V2 chalcopyrite compounds to engineer the nonlinear electrical (NLE) and nonlinear optical (NLO) properties of the active medium, the doping/alloying being internal by engineered native defect chemistry, external by adding non-active elements, or both internal and external whereby the nonlinear electrical (NLE) and nonlinear optical (NLO) properties can be manipulated.

19. The optical quantitative detection device as recited in claim 1 wherein the nonlinear waveguided layers comprise self-assembled and/or nano-scale engineered III-V and II-VI nano-composites embedded in closely lattice-matching III-V, II-VI or I-VII compounds forming a nonlinear, birefringent layer.

20. The optical quantitative detection device as recited in claim 1 wherein the nonlinear waveguided layers comprise growth of the described waveguided heterostructures (a) through (g) by organometallic chemical vapor deposition (OMCVD or MOCVD), by liquid phase epitaxy (LPE), by chemical beam epitaxy (CBE), and/or by gas source molecular beam epitaxy (MBE).

21. The optical quantitative detection device as recited in claim 2 wherein the molecule specific sensitized surface layer comprises ultra-thin metal layers (4-50 Å

) such as Au, Ag, Pt.

22. The optical quantitative detection device as recited in claim 2 wherein the molecule specific sensitized surface layer comprises Ultra-thin dielectric layers (5-100 Å

) such as Si₃N₄—

SiO₂ Si_xO_2-x.

23. The optical quantitative detection device as recited in claim 2 wherein the molecule specific sensitized surface layer comprises an organic coating deposited on top of the cladding layer and/or the nonlinear layer.

24. The optical quantitative detection device as recited in claim 1 wherein photonic band-gap crystal arrangements enhance birefringent properties.

25. The optical quantitative detection device as recited in claim 1 wherein birefringent property of a photonic band-gap crystal functions as an optical wave filter/detector and/or ray guide.

26. The optical quantitative detection device as recited in claim 1 wherein birefringent property of an ordered or disordered nano-structure of chalcopyrite material embedded in a linear/nonlinear composite generates coherent light over a broad wavelength range.

27. The optical quantitative detection device as recited in claim 1 wherein the nonlinear waveguide sensor further comprises a weak birefringent material and the birefringent effect is enhanced by embedding the material in a photonic band-gap crystal.

28. The optical quantitative detection device as recited in claim 1 wherein the optical quantitative detection device is adapted to detect an air borne indication of the target molecule.

29. The optical quantitative detection device as recited in claim 1 further comprises:

a plurality of sensor elements;

each sensor element sensitized for a particular molecular structure;

an optical waveguide optically coupled to the plurality of sensor elements enabling optical excitation of the plurality of sensor elements; and

a plurality of detectors wherein each one of the plurality of detectors is optically coupled to a corresponding one of the plurality of sensor elements;

wherein optical excitation of the plurality of sensor elements enables discrimination of a target molecule.