Method and apparatus for mechanochemical polishing
First Claim
Patent Images
1. A method for mechanochemical polishing, comprising:
- preparing a chemical solution that includes hydrogen peroxide water and abrasive grains made of chromium (III) oxide;
polishing a surface of a SiC wafer by mechanochemical polishing to remove SiC from the surface of the wafer using the chemical solution and a polishing cloth with a processing pressure having a range of approximately 0.1-3.0 kgf/cm2; and
increasing oxygen concentration on the surface of the SiC wafer to promote the formation of an oxide of the SiC wafer by performing the polishing in the presence of the hydrogen peroxide water, wherein the oxide of the SiC wafer is formed by catalysis of the chromium (III) oxide, and the oxygen concentration around the polishing surface of the SiC wafer is increased by supplying the hydrogen peroxide water to the polishing surface to promote the formation of the oxide of the SiC wafer.
1 Assignment
0 Petitions
Accused Products
Abstract
In a mechanochemical polishing apparatus, a SiC wafer is held on a wafer holding table. The surface of the wafer to be polished is pressed against a polishing cloth applied to a polishing platen with a predetermined processing pressure. The wafer holding table and polishing platen are then rotated to perform polishing with chemical liquid dropped on the polishing cloth. The chemical liquid includes chromium (III) oxide as abrasive grains and hydrogen peroxide water (oxidizing agent) for improving polishing efficiency.
50 Citations
17 Claims
-
1. A method for mechanochemical polishing, comprising:
-
preparing a chemical solution that includes hydrogen peroxide water and abrasive grains made of chromium (III) oxide;
polishing a surface of a SiC wafer by mechanochemical polishing to remove SiC from the surface of the wafer using the chemical solution and a polishing cloth with a processing pressure having a range of approximately 0.1-3.0 kgf/cm2; and
increasing oxygen concentration on the surface of the SiC wafer to promote the formation of an oxide of the SiC wafer by performing the polishing in the presence of the hydrogen peroxide water, wherein the oxide of the SiC wafer is formed by catalysis of the chromium (III) oxide, and the oxygen concentration around the polishing surface of the SiC wafer is increased by supplying the hydrogen peroxide water to the polishing surface to promote the formation of the oxide of the SiC wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
-
Specification