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Method of manufacturing semiconductor device having gate electrode with expanded upper portion

  • US 6,835,610 B2
  • Filed: 06/03/2003
  • Issued: 12/28/2004
  • Est. Priority Date: 09/04/2002
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • forming a gate insulating film on a semiconductor substrate and forming a polysilicon layer on said gate insulating film;

    implanting ions into said polysilicon layer;

    patterning said polysilicon layer to form a gate electrode;

    annealing said gate electrode; and

    siliciding an upper portion of said gate electrode to form a silicide layer that has a lower portion facing said gate electrode and an upper portion opposite to said lower portion, said upper portion of said silicide layer being wider than said lower portion, wherein a total dose of said ions to be implanted in said implanting is 6×

    1015/cm2 or larger.

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