Method of producing an integrated circuit with a carbon nanotube

• US 6,835,613 B2
• Filed: 12/06/2002
• Issued: 12/28/2004
• Est. Priority Date: 12/06/2001
• Status: Expired due to Term

• Current Assignee: University of South Florida (State University System of Florida)
• Original Assignee: University of South Florida (State University System of Florida)
• Inventors: Schlaf, Rudiger
• Primary Examiner(s): Whitehead, Jr., Carl
• Assistant Examiner(s): PHAM, THANHHA S
• Application Number:
  US10/313,886
• Publication Number:
  US 20030157744A1
• Time in Patent Office: 753 Days
• Field of Search: 438/20, 438/149, 438/151, 438/197, 438/199, 438/618, 438/99, 438/585, 438/680, 438/681
• US Class Current: 438/199
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C01B 32/162 characterised by catalysts
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C30B 25/00 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
• CPC Class Codes: C30B 29/02 Elements
• CPC Class Codes: C30B 29/605 Products containing multiple oriented crystallites, e.g. columnar crystallites
• CPC Class Codes: G01N 2291/0256 Adsorption, desorption, surface mass change, e.g. on biosensors
• CPC Class Codes: G01N 29/036 by measuring frequency or resonance of acoustic waves
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: G11C 23/00 Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 85/221 Carbon nanotubes
• CPC Class Codes: Y10S 977/938 Field effect transistors, FETS, with nanowire- or nanotube-channel region

Abstract

A method of producing an integrated circuit with a carbon nanotube is disclosed. The integrated circuit includes a source, a drain, and a gate, and the source and the drain are positioned on the gate. A catalytic material is deposited onto the source. The catalytic material is then subjected to chemical vapor deposition. This initiates growth of the carbon nanotube such that the carbon nanotube extends from the source. Next, the carbon nanotube is bent toward the integrated circuit such that the carbon nanotube extends between the source and the drain to render the circuit operable.

Claims

1. A method of producing an integrated circuit with a carbon nanotube, wherein the integrated circuit includes a source, a drain, and a gate, the source and drain being positioned on the gate, said method comprising the steps of:

depositing a catalytic material onto at least one of the source and the drain;

subjecting the catalytic material to chemical vapor deposition to initiate growth of the carbon nanotube such that the carbon nanotube extends from at least one of the source and the drain;

depositing platinum onto at least one of the source and the drain prior to deposition of the catalytic material to increase the rigidity of the carbon nanotube that extends from at least one of the source and the drain; and

bending the carbon nanotube toward the integrated circuit such that the carbon nanotube extends between the source and the drain to render the circuit operable.

2. A method as set forth in claim 1 wherein the step of bending the carbon nanotube is further defined as subjecting the integrated circuit to an electrical charge to create an attractive force between the carbon nanotube and the integrated circuit.

3. A method as set forth in claim 2 wherein the step of subjecting the integrated circuit to the electrical charge comprises the step of positioning at least one electrode on the circuit opposite the carbon nanotube.

4. A method as set forth in claim 3 wherein the step of subjecting the integrated circuit to an electrical charge further comprises the step of applying a voltage between the carbon nanotube and the at least one electrode to create the attractive force between the carbon nanotube and the integrated circuit.

5. A method as set forth in claim 1 wherein the step of depositing the catalytic material onto at least one of the source and the drain is further defined as depositing the catalytic material onto the source.

6. A method as set forth in claim 5 wherein the step of subjecting the catalytic material to chemical vapor deposition is further defined as subjecting the catalytic material to chemical vapor deposition to initiate growth of the carbon nanotube such that the carbon nanotube extends from the source.

7. A method as set forth in claim 1 wherein the step of depositing the catalytic material onto at least one of the source and the drain is further defined as depositing the catalytic material onto the drain.

8. A method as set forth in claim 7 wherein the step of subjecting the catalytic material to chemical vapor deposition is further defined as subjecting the catalytic material to chemical vapor deposition to initiate growth of the carbon nanotube such that the carbon nanotube extends from the drain.

9. A method as set forth in claim 1 wherein the step of depositing the catalytic material onto at least one of the source and the drain is further defined as depositing a catalytic material selected from the group consisting of nickel, cobalt, iron, and combinations thereof.

10. A method as set forth in claim 1 wherein the step of subjecting the catalytic material to chemical vapor deposition comprises the step of transforming a gaseous precursor selected from the group consisting of hydrides, halides, metal-organics, and combinations thereof into a solid material.

11. A method as set forth in claim 1 wherein the step of subjecting the catalytic material to chemical vapor deposition is further defined as subjecting the catalytic material to plasma enhanced chemical vapor deposition.

12. A method as set forth in claim 1 wherein the step of depositing the catalytic material onto at least one of the source and the drain is further defined as depositing the catalytic material onto at least one of the source and the drain using focused ion beam deposition.

13. A method as set forth in claim 1 further comprising the step of controlling an angle that the carbon nanotube grows at relative to at least one of the source and the drain.

14. A method as set forth in claim 13 wherein the step of controlling the angle that the carbon nanotube grows at is further defined as applying an electric field as the catalytic material is subjected to chemical vapor deposition.

15. A method as set forth in claim 1 wherein the step of depositing the catalytic material onto at least one of the source and the drain comprises the step of controlling an amount of the catalytic material that is deposited onto at least one of the source and the drain to vary at least one of a diameter of the carbon nanotube and a number of walls present in the carbon nanotube.

16. A method as set forth in claim 1 wherein the step of subjecting the catalytic material to chemical vapor deposition comprises the step of controlling a duration of the chemical vapor deposition to vary a length of the carbon nanotube.

17. A method as set forth in claim 1 wherein the step of depositing platinum onto at least one of the source and the drain is further defined as depositing platinum onto at least one of the source and the drain using focused ion beam deposition.