Semiconductor polysilicon component and method of manufacture thereof

• US 6,838,308 B2
• Filed: 05/14/2001
• Issued: 01/04/2005
• Est. Priority Date: 08/18/2000
• Status: Expired due to Fees

• Current Assignee: Sharp Corporation (Hon Hai Precision Industry Co., Ltd.), Tohoku Techno Arch Co., Ltd.
• Original Assignee: Sharp Corporation (Hon Hai Precision Industry Co., Ltd.), Tohoku Techno Arch Co., Ltd.
• Inventors: Haga, Koichi
• Primary Examiner(s): Everhart, Caridad
• Application Number:
  US10/344,840
• Publication Number:
  US 20040023432A1
• Time in Patent Office: 1,331 Days
• Field of Search: 438/104, 438/30, 438/149, 438/150, 438/785, 257/103, 257/410, 257/613
• US Class Current: 438/104
• CPC Class Codes: C03C 17/3417 all coatings being oxide coatings
• CPC Class Codes: C03C 17/36 at least one coating being a metal
• CPC Class Codes: C03C 17/3605 Coatings of the type glass/metal/inorganic compound
• CPC Class Codes: C03C 17/3615 Coatings of the type glass/metal/other inorganic layers, at least one layer being non-metallic
• CPC Class Codes: C03C 17/3649 made of metals other than silver
• CPC Class Codes: C03C 17/3671 specially adapted for use as electrodes
• CPC Class Codes: C23C 14/025 Metallic sublayers
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/407 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/16 Oxides
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

On a transparent substrate, by use of, for instance, vapor deposition, an Al film is formed. Subsequently, with a DC-bias applied on a surface of the Al film, a first zinc oxide thin film is formed by use of a sputtering method. On a surface of the first zinc oxide thin film, according to an atmospheric MO-CVD method, a second zinc oxide thin film is formed. When the second zinc oxide thin film deposited by use of an MO-CVD method is formed on the first zinc oxide thin film having a-axis orientation, the second zinc oxide thin film becomes to have the a-axis orientation. Since the Al thin film, owing to heat during the deposition by use of the MO-CVD method, is absorbed in the first zinc oxide thin film, the transparency is improved. As a result, a sample having a ZnO/ZnO/Al/glass structure becomes high in the transparency as a whole.

Claims

1. A method of fabricating a polycrystalline transparent semiconductor member, characterized in that the method comprises:

forming a conductive film on a transparent substrate, and with a DC-bias applying to the formed conductive film, forming, according to a sputtering method, a polycrystalline zinc oxide thin film having a-axis orientation; and

forming, by means of a MO-CVD method, a second polycrystalline zinc oxide thin film having a-axis orientation on the polycrystalline zinc oxide thin film;

wherein in the MO-CVD method, hydrative zinc acetyl acetonate is used as a raw material.

2. A method of fabricating a polycrystalline transparent semiconductor member as set forth in claim 1, characterized in that the hydrative zinc acetyl acetonate is preliminarily heated to decompose followed by reacting with an oxygen gas.

3. A method of fabricating a polycrystalline transparent semiconductor member as set forth in claim 1, characterized in that the zinc acetyl acetonate contains an impurity of a I group or III group.

4. A method of fabricating a polycrystalline transparent semiconductor member as set forth in claim 1, characterized in that the conductive film is a metal, and by forming the second polycrystalline zinc oxide thin film by means of the MO-CVD method, a conductive film of the metal is oxidized to improve transparency.

5. A transparent semiconductor, characterized in that the transistor is fabricated according to the method of fabricating a polycrystalline transparent semiconductor member set forth in claim 1, provided with a transparent electrode disposed on the second zinc oxide thin film to form an active element, and has transmittance of 50% or more in the visible region.

8. A transparent semiconductor, characterized in that the transistor is fabricated according to the method of fabricating a polycrystalline transparent semiconductor member set forth in claim 2, provided with a transparent electrode disposed on the second zinc oxide thin film to form an active element, and has transmittance of 50% or more in the visible region.

9. A transparent semiconductor, characterized in that the transistor is fabricated according to the method of fabricating a polycrystalline transparent semiconductor member set forth in claim 3, provided with a transparent electrode disposed on the second zinc oxide thin film to form an active element, and has transmittance of 50% or more in the visible region.

10. A transparent semiconductor, characterized in that the transistor is fabricated according to the method of fabricating a polycrystalline transparent semiconductor member set forth in claim 4, provided with a transparent electrode disposed on the second zinc oxide thin film to form an active element, and has transmittance of 50% or more in the visible region.

6. A transparent semiconductor element, characterized in that the semiconductor element is fabricated by laminating a transparent substrate, a metal oxide film, a first zinc oxide thin film having a-axis orientation, and a second zinc oxide thin film having a-axis orientation, and by disposing, on the second zinc oxide thin film having a-axis orientation, a transparent source electrode and drain electrode, and a transparent gate insulating film and gate electrode, and has transmittance of 50% or more in the visible region.

7. A transparent semiconductor element as set forth in claim 6, characterized in that the metal oxide film is a film of oxide of tungsten or titanium.