Method of forming semiconductor wiring structures

• US 6,838,376 B2
• Filed: 11/05/1998
• Issued: 01/04/2005
• Est. Priority Date: 11/05/1997
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Otsuki, Hayashi, Matsuse, Kimihiro
• Primary Examiner(s): QUACH, TUAN N
• Application Number:
  US09/530,588
• Publication Number:
  US 20030034560A1
• Time in Patent Office: 2,252 Days
• Field of Search: 438/643, 438/648, 438/649, 438/653, 438/655, 438/656, 438/680, 257/412, 257/413, 257/754, 257/755, 257/756, 257/764, 257/751
• US Class Current: 438/653
• CPC Class Codes: H01L 21/28061 the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction H01L21/28052 takes precedence
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28568 the conductive layers comprising transition metals H01L21/28518 takes precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76856 by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/53228 the principal metal being copper
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 29/4941 with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method of forming a barrier metal film formed of a nitride film including tungsten by thermal CVD. The method includes positioning a substrate in a processing vessel and forming a WSi film on one side of the substrate by supplying a process gas including WF₆ gas and at least one of SiR₄ gas, SiH₂Cl₂ gas and Si₂H₆ gas into the processing vessel while a processing pressure in the processing vessel is maintained. The method also includes shutting off the supplying of the process gas into the processing vessel and completely removing the process gas from the processing vessel by supplying a purging gas into the processing vessel after the shutting off the supplying. The WSi film is nitrided by supplying NH₃ gas or MMH gas into the processing vessel from which the process gas has been removed, to form a WSixNy film.

Claims

1. A method of forming a barrier metal film formed of a nitride film including tungsten by thermal CVD, comprising:

(a) positioning a substrate in a processing vessel;

(b) forming a WSi film on one side of the substrate by supplying a process gas including WF₆ gas and at least one of SiH₄ gas, SiH₂Cl₂ gas and Si₂H₆ gas into the processing vessel while a processing pressure in the processing vessel is maintained;

(c) shutting off the supplying of the process gas into the processing vessel;

(d) completely removing the process gas from the processing vessel by supplying a purging gas into the processing vessel after the shutting off the supplying; and

(e) nitriding the WSi film by supplying NH₃ gas or MMH gas into the processing vessel from which the process gas has been removed, to form a WSixNy film.

2. The method according to claim 1, wherein the nitriding of the WSi film is performed in another processing vessel.

3. The method according to claim 1, wherein the WSi film is formed at a temperature of about 300 to 450°

C. and on a pressure of about 0.5 to 80 Torr.

4. The method according to claim 1, wherein the nitriding of the WSi film is performed by under the following process conditions:

temperature;

about 300-450°

C., and

pressure;

about 0.5-10 Torr.

5. A method of forming a barrier metal film by thermal CVD, comprising:

(a) positioning a substrate in a processing vessel;

(b) forming a film containing tungsten on one side of the substrate by supplying a process gas including a gas containing tungsten and a gas containing hydrogen into the processing vessel, while a processing pressure in the processing vessel is maintained;

(c) shutting off the supplying of the process gas into the processing vessel;

(d) removing the process gas from the processing vessel by supplying an inert gas as a purging gas into the processing vessel after the shutting off the supplying; and

(e) nitriding the film containing tungsten by supplying NH₃ gas or MMH gas into the processing vessel from which the process gas has been removed, to form a nitrided film.

6. The method according to claim 5, wherein the nitriding of the film is performed by generating plasma.

7. The method according to claim 5, wherein the gas containing hydrogen includes at least one of H₂ gas, SiH₄ gas, Si₂H₆ gas, and SiH₂Cl₂ gas.

8. A method of forming a barrier metal film by thermal CVD comprising:

(a) positioning a substrate in a processing vessel;

(b) forming a W film on one side of the substrate by supplying a process gas including WF₆ gas and H₂ gas into the processing vessel while a processing pressure in the processing vessel is maintained;

(c) shutting off the supplying of the process gas into the processing vessel;

(d) removing the process gas from the processing vessel by supplying an inert gas as a purging gas into the processing vessel, after the shutting off the supplying; and

(e) nitriding the W film by supplying a gas containing NH₃ gas or MMH gas into the processing vessel from which the process gas has been removed, to form a WNx film.

9. The method according to claim 8, wherein the film containing tungsten is formed at a temperature of about 300 to 450°

C.

10. The method according to claim 8, wherein the W film is formed at a temperature of about 300 to 450°

C.

11. The method according to claim 8, wherein the nitride of the W film is performed by using MMH gas under the following process conditions:

temperature;

about 300-450°

C., and

pressure;

about 0.5-10 Torr.

12. The method according to claim 8, wherein the W film is formed on a pressure of about 1 to 80 Torr.

13. A method of forming a barrier metal film by thermal CVD, comprising:

(a) positioning a substrate in a processing vessel;

(b) forming a film containing metal on one side of the substrate by supplying a process gas including a gas containing metal and a gas containing hydrogen into the processing vessel, while a processing pressure in the processing vessel is maintained by using plasma-less thermal CVD method;

(c) shutting off the supplying of the process gas into the processing vessel;

(d) removing the process gas from the processing vessel by supplying an inert gas as a purging gas into the processing vessel, after the shutting off the supplying; and

(e) nitriding the film containing metal by supplying NH₃ gas into the processing vessel from which the process gas has been removed to form a nitrided film including metal.

14. The method according to claim 13, wherein the nitriding of the film containing metal is performed in another processing vessel.

15. The method according to claim 13, wherein said nitriding comprises supplying at least one of MMH and N₂.

16. The method according to claim 13, wherein the film containing metal is formed of a metal film or metal-silicide film.