Plasma reactor with overhead RF electrode tuned to the plasma

• US 6,838,635 B2
• Filed: 11/05/2002
• Issued: 01/04/2005
• Est. Priority Date: 03/17/2000
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Hoffman, Daniel J., Yin, Gerald Zheyao
• Primary Examiner(s): PASCHALL, MARK H
• Application Number:
  US10/288,890
• Publication Number:
  US 20030062344A1
• Time in Patent Office: 791 Days
• Field of Search: 219/121.43, 219/121.41, 219/121.4, 219/121.52, 219/121.57, 156/345.48, 118/223.I, 315/111.51, 204/298.06, 204/298.08
• US Class Current: 219/121.43
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32183 Matching circuits

Abstract

In accordance with one aspect of the invention, a plasma reactor has a capacitive electrode driven by an RF power source, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.

Claims

1. A plasma reactor for processing a semiconductor workpiece, comprising:

a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece;

an overhead electrode overlying said workpiece support;

an RE power generator for supplying power at a VHF frequency;

a fixed impedance match element coupled to said RF power generator and said overhead electrode;

a bias power generator; and

,

an impedance match circuit coupled to said bias power generator and said wafer support.

2. The reactor of claim 1 wherein said workpiece support provides an RE return path for VHF power coupled into said chamber from said overhead electrode.

3. The reactor of claim 2 wherein said overhead electrode provides an RF return path for bias power coupled into said chamber from said workpiece support.

4. The reactor of claim 3 wherein the frequency of said bias power generator is an HF frequency.

5. The reactor of claim 4 wherein said HF frequency is on the order of about 13 MHz and said VHF frequency is on the order of about 200 MHz.

6. The reactor of claim 5 wherein said overhead electrode and said workpiece support define planar parallel surfaces facing one another.

7. The reactor of claim 6 further comprising a semiconductive annular ring surrounding the periphery of said wafer, said ring extending an effective return electrode area presented to VHF power coupled into said chamber from said overhead electrode.

8. The reactor of claim 1 wherein said VHF frequency is suitable for capacitively coupling plasma source power.

9. The reactor of claim 1 wherein said fixed impedance match element comprises a coaxial tuning stub.

10. The reactor of claim 1 wherein said fixed impedance match element maintains a voltage standing wave ratio not exceeding 3:

1 over a 9;

1 change in real part of load impedance.

11. The reactor of claim 1 wherein said fixed impedance match element maintains a voltage standing wave ratio not exceeding 3:

1 over a 60;

1 change in real part of load impedance.

12. A plasma reactor for processing a semiconductor workpiece, comprising:

a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece;

an overhead electrode overlying said workpiece support;

an RF power generator for supplying power at a VHF frequency to said overhead electrode;

a bias power generator;

an impedance match circuit coupled to said bias power generator and to said wafer support;

a semiconductive annular ring surrounding the periphery of said wafer, said ring extending an effective return electrode area presented to VHF power coupled into said chamber from said overhead electrode; and

an insulating annulus supporting said ring and electrically insulating said ring from said chamber wall, the dielectric constant of said ring determining apportionment of VHF power return current between said workpiece support and said semiconductor ring.

13. The reactor of claim 12 wherein the effective return electrode area for VHF power coupled into said chamber from said overhead electrode exceeds the area of said overhead electrode.

14. The reactor of claim 13 further comprising a capacitive element between said overhead electrode and said fixed impedance matching element, the capacitive element having a capacitance sufficient to provide DC isolation between said plasma and said fixed impedance matching element.

15. A plasma reactor for processing a semiconductor workpiece, comprising:

a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece;

an overhead electrode overlying said workpiece support;

an RF power generator;

a fixed impedance match element coupled to said RF power generator and said overhead electrode;

a bias power generator; and

,

an impedance match circuit coupled to said bias power generator and said wafer support.

16. The plasma reactor of claim 15 further comprising:

a semiconductive annular ring surrounding the periphery of said wafer, said ring extending an effective return electrode area presented to VHF power coupled into said chamber from said overhead electrode; and

an insulating annulus supporting said ring and insulating said ring from said chamber wall, the dielectric constant of said ring determining apportionment of VHF power return current between said workpiece support and said semiconductor ring.