Multiple-mode memory and method for forming same
First Claim
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1. A multiple-mode memory comprising:
- an integrated circuit substrate;
a plurality of word lines;
a plurality of bit lines crossing the word lines;
a plurality of memory cells, each memory cell coupled between a respective word line and a respective bit line, the word lines, bit lines and memory cells included in a single integrated circuit carried by the substrate;
the memory cells comprising a plurality of memory cells of a first type and a plurality of memory cells of a second type;
wherein the memory cells of the first type are programmed during manufacturing, and wherein the memory cells of the second type are programmed in the field.
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Abstract
A multiple-mode memory includes a three-dimensional array of word lines, bit lines and memory cells. The memory cells are arranged in multiple vertically stacked layers. In some layers the memory cells are implemented as field-programmable write-once memory cells, and in other layers the memory cells are implemented as field-programmable re-writable memory cells. In this way, both re-writability and permanent data storage are provided in an inexpensive, single-chip solution. Additional types and numbers of types of memory cells can be used.
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Citations
20 Claims
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1. A multiple-mode memory comprising:
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an integrated circuit substrate;
a plurality of word lines;
a plurality of bit lines crossing the word lines;
a plurality of memory cells, each memory cell coupled between a respective word line and a respective bit line, the word lines, bit lines and memory cells included in a single integrated circuit carried by the substrate;
the memory cells comprising a plurality of memory cells of a first type and a plurality of memory cells of a second type;
wherein the memory cells of the first type are programmed during manufacturing, and wherein the memory cells of the second type are programmed in the field. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A multiple-mode memory comprising:
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an integrated circuit substrate;
a plurality of word lines;
a plurality of bit lines crossing the word lines;
a plurality of memory cells, each memory cell coupled between a respective word line and a respective bit line, the word lines, bit lines and memory cells included in a single integrated circuit carried by the substrate;
the memory cells comprising a plurality of memory cells of a first type and a plurality of memory cells of a second type;
wherein the memory cells of the first type store a file system structure, and wherein the memory cells of the second type store a digital media file. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A multiple-mode memory comprising:
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an integrated circuit substrate;
a plurality of word lines;
a plurality of bit lines crossing the word lines;
a plurality of memory cells, each memory cell coupled between a respective word line and a respective bit line, the word lines, bit lines and memory cells included in a single integrated circuit carried by the substrate;
the memory cells comprising a plurality of memory cells of a first type and a plurality of memory cells of a second type;
wherein the memory cells of the first type store a different data type than the memory cells of the second type. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification