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Method of forming a barrier layer of a tunneling magnetoresistive sensor

  • US 6,841,395 B2
  • Filed: 11/25/2002
  • Issued: 01/11/2005
  • Est. Priority Date: 11/25/2002
  • Status: Expired due to Fees
First Claim
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1. A method of forming a barrier layer of a tunneling magnetoresistive (TMR) sensor, comprising the acts of:

  • depositing a metallic film over a ferromagnetic (FM) layer;

    depositing an oxygen-doped metallic film over the metallic film; and

    performing an oxygen treatment on the oxygen-doped metallic film.

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