Semiconductor device and method of manufacturing the same

• US 6,841,420 B2
• Filed: 09/11/2003
• Issued: 01/11/2005
• Est. Priority Date: 03/12/2002
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: Ohuchi, Rieka
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): Maldonado, Julio J.
• Application Number:
  US10/659,383
• Publication Number:
  US 20040087062A1
• Time in Patent Office: 488 Days
• Field of Search: 438/118, 438/112, 438/124, 438/126, 438/127
• US Class Current: 438/118
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/83191 wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/838 Bonding techniques
• CPC Class Codes: H01L 2224/83885 Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/83855 - H01L2224/8388, e.g. for hybrid thermoplastic-thermosetting adhesives
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/90 Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01024 Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]

Abstract

The present invention relates to a semiconductor device in which a semiconductor element and a substrate are disposed face-to-face, the mixture of the thermoplastic resin and the thermosetting resin is provided between the semiconductor element having the electrode formed thereon and the substrate having the wiring pattern formed thereon, the mixture holding in contact the electrode of the semiconductor element and the wiring pattern of the substrate. The semiconductor device of the present invention is obtained by: providing a sealing resin, which is a mixture of a thermoplastic resin and a thermosetting resin, between the semiconductor element and the substrate; heating at a temperature greater than a melting temperature of the thermoplastic resin; applying pressure to the sealing resin so that it spreads through the space between the semiconductor element and the substrate; melt-bonding the semiconductor element and the substrate through a cooling contraction of the thermoplastic resin component; and heating at a temperature less than a melt bond temperature of the thermoplastic resin component to cure the thermosetting resin component.

Claims

1. A method for producing a semiconductor device comprising steps of:

providing a mixture of thermoplastic resin component and thermosetting resin component between constituent parts;

heating at a temperature greater than a melting temperature of said thermoplastic resin component;

applying pressure to said mixture so that it spreads through a space between said constituent parts;

completing a melt bonding of said constituent parts through a cooling contraction of said thermoplastic resin component; and

heating at a temperature less than a melt bond temperature of said thermoplastic resin component to cure said thermosetting resin component.

3. A method for producing a semiconductor device according to claim 1, wherein

a melting temperature of said thermoplastic resin is greater than a glass transition temperature of said thermosetting resin.

5. A method for producing a semiconductor device according to claim 3, wherein

X·

E₁·

α

₁<

(1−

X)·

E₂·

α

₂ holds, where

E₁ is a modulus of elasticity of said thermoplastic resin,

α

₁ is a coefficient of thermal expansion of said thermoplastic resin,

E₂ is a modulus of elasticity of said thermosetting resin,

α

₂ is a coefficient of thermal expansion of said thermosetting resin, and

X is a content by percentage of said thermoplastic resin in said mixture and 0<

X<

1.

7. A method for producing a semiconductor device according to claim 5, wherein

the modulus of elasticity E₁ of said thermoplastic resin is less than the modulus of elasticity E₂ of said thermosetting resin.

9. A method for producing a semiconductor device according to claim 5, wherein

said X is in a range from 0.4 to 0.6.

11. A method for producing a semiconductor device according to claim 1, wherein

said thermoplastic resin is thermoplastic polyimide resin and said thermosetting resin is epoxy resin.

2. A method for producing a semiconductor device comprising steps of:

providing a mixture of thermoplastic resin component and thermosetting resin component between a semiconductor element and a substrate;

heating at a temperature greater than a melting temperature of said thermoplastic resin component;

applying pressure to said mixture so that it spreads through a space between said semiconductor element and said substrate;

completing a melt bonding of said semiconductor element and said substrate through a cooling contraction of said thermoplastic resin component; and

heating at a temperature less than a melt bond temperature of said thermoplastic resin component to cure said thermosetting resin component.

4. A method for producing a semiconductor device according to claim 2, wherein

a melting temperature of said thermoplastic resin is greater than a glass transition temperature of said thermosetting resin.

6. A method for producing a semiconductor device according to claim 4, wherein

X·

E₁·

α

₁<

(1−

X)·

E₂·

α

₂ holds, where

E₁ is a modulus of elasticity of said thermoplastic resin,

α

₁ is a coefficient of thermal expansion of said thermoplastic resin,

E₂ is a modulus of elasticity of said thermosetting resin,

α

₂ is a coefficient of thermal expansion of said thermosetting resin, and

X is a content by percentage of said thermoplastic resin in said mixture and 0<

X<

1.

8. A method for producing a semiconductor device according to claim 6, wherein

the modulus of elasticity E₁ of said thermoplastic resin is less than the modulus of elasticity E₂ of said thermosetting resin.

10. A method for producing a semiconductor device according to claim 6, wherein

said X is in a range from 0.4 to 0.6.

12. A method for producing a semiconductor device according to claim 2, wherein

said thermoplastic resin is thermoplastic polyimide resin and said thermosetting resin is epoxy resin.