Method of making an icosahedral boride structure
First Claim
1. A method for fabricating a semiconductor device, comprising the steps of:
- providing a SiC substrate; and
epitaxially growing an icosahedral boride layer on at least one surface of said SIC substrate.
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Accused Products
Abstract
A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (B12P2) or boron arsenide (B12As2). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of B12P2 with a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of B12As2 with a base layer or substrate of SiC is provided. In yet another aspect, thin films of B12P2 or B12As2 are formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050° C., more preferably in the range of 1100° C. to 1400° C., and still more preferably approximately 1150° C.
12 Citations
20 Claims
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1. A method for fabricating a semiconductor device, comprising the steps of:
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providing a SiC substrate; and
epitaxially growing an icosahedral boride layer on at least one surface of said SIC substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for fabricating a semiconductor device, comprising the steps of:
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providing a SiC substrate; and
depositing an icosahedral boride layer on at least one surface of said SiC substrate. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification