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Method of making an icosahedral boride structure

  • US 6,841,456 B2
  • Filed: 04/17/2003
  • Issued: 01/11/2005
  • Est. Priority Date: 04/09/2001
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a semiconductor device, comprising the steps of:

  • providing a SiC substrate; and

    epitaxially growing an icosahedral boride layer on at least one surface of said SIC substrate.

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