Method for forming gate electrode of semiconductor device
First Claim
1. A method for forming a gate electrode of a semiconductor device, the method comprising the steps:
- i) forming a gate oxide film, a doped-silicon film, a tungsten nitride film, a tungsten film, and a hard mask film sequentially on a semiconductor substrate;
ii) patterning the hard mask film;
iii) etching the tungsten film and the tungsten nitride film using the patterned hard mask film as an etching barrier in order to expose the doped-silicon film;
iv) implanting predetermined oxidation-accelerating ions into a portion of the exposed doped-silicon film;
v) etching the exposed doped-silicon film; and
vi) re-oxidizing the substrate resulting object to form a re-oxidation film at a side of the etched doped-silicon film.
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Abstract
Disclosed is a method for a gate electrode of a semiconductor device, which forms a re-oxidation film of a sufficient thickness by a low temperature re-oxidation process. Gate oxide film, doped-silicon film, tungsten nitride film, tungsten film, and hard mask film are sequentially formed on semiconductor substrate. Hard mask film is patterned. Tungsten film and tungsten nitride film are etched using patterned hard mask film as an etching barrier in order to expose doped-silicon film. Predetermined oxidation-accelerating ions are implanted into a portion and a side of exposed doped-silicon film. A portion of exposed doped-silicon film is etched. Substrate resulting object is re-oxidized to form a re-oxidation film at a side of etched doped-silicon film.
13 Citations
6 Claims
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1. A method for forming a gate electrode of a semiconductor device, the method comprising the steps:
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i) forming a gate oxide film, a doped-silicon film, a tungsten nitride film, a tungsten film, and a hard mask film sequentially on a semiconductor substrate;
ii) patterning the hard mask film;
iii) etching the tungsten film and the tungsten nitride film using the patterned hard mask film as an etching barrier in order to expose the doped-silicon film;
iv) implanting predetermined oxidation-accelerating ions into a portion of the exposed doped-silicon film;
v) etching the exposed doped-silicon film; and
vi) re-oxidizing the substrate resulting object to form a re-oxidation film at a side of the etched doped-silicon film. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification
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- Resources
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Current AssigneeHynix Semiconductor Incorporated (SK Hynix Inc.)
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Original AssigneeHynix Semiconductor Incorporated (SK Hynix Inc.)
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InventorsPyi, Seung Ho
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Primary Examiner(s)Picardat, Kevin M.
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Application NumberUS10/701,327Publication NumberTime in Patent Office434 DaysField of Search438/585, 438/586, 438/587, 438/588, 438/589, 438/590, 438/591, 438/592, 438/593, 438/594, 438/595, 438/596US Class Current438/585CPC Class CodesH01L 21/26506 in group IV semiconductorsH01L 21/266 using masks H01L21/26586 ta...H01L 21/28061 the conductor comprising a ...H01L 21/28247 passivation or protection o...H01L 21/32155 Doping polycristalline - or...H01L 29/4941 with a barrier layer betwee...
