Method of reducing in-trench smearing during polishing

• US 6,841,479 B2
• Filed: 04/10/2002
• Issued: 01/11/2005
• Est. Priority Date: 04/12/2001
• Status: Expired due to Fees

• Current Assignee: Cabot Microelectronics Corporation (Entegris Incorporated)
• Original Assignee: Cabot Microelectronics Corporation (Entegris Incorporated)
• Inventors: Feeney, Paul M., Cherian, Isaac K., Moeggenborg, Kevin J.
• Primary Examiner(s): CHEN, KIN CHAN
• Application Number:
  US10/119,862
• Publication Number:
  US 20020151177A1
• Time in Patent Office: 1,007 Days
• Field of Search: 438/690, 438/691, 438/692, 438/693
• US Class Current: 438/690
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers

Abstract

The invention provides a method of reducing in-trench smearing during polishing. The method comprises providing a substrate comprising a first layer comprising an insulating material, a second layer comprising a filling material, and a plurality of field and trench regions. A polymeric material is infiltrated over the substrate, wherein the polymeric material fills the trench regions and covers the field regions. The polymeric material optionally is removed from the field regions, followed by baking of the substrate such that the polymeric material in the trench regions becomes recessed below the insulating material of the field regions. The substrate is then subjected to a temperature of about 100° C. or more for about 30 minutes or longer, such that during polishing of the substrate, smearing of the filling material in the trench regions is reduced as compared to polishing of the substrate under the same conditions except for subjecting the substrate to the temperature of about 100° C. or more for about 30 minutes or longer. When desirable, a layer of additional material can be deposited over the polymeric material such that it forms a layer over the polymeric material in the trench regions and the filling material in the field regions. The substrate is then polished to obtain a substantially planar surface.

Claims

1. A method of polishing a substrate comprising the following sequential steps:

(a) providing a substrate comprising (i) a first layer comprising an insulating material, (ii) a second layer comprising a filling material that differs from the insulating material, and (iii) a plurality of field and trench regions;

(b) infiltrating a polymeric material over the substrate, wherein the polymeric material fills the trench regions and covers the field regions;

(c) removing the polymeric material from the field regions to expose the filling material in the field regions;

(d) subjecting the substrate to a temperature of about 100°

C. or more for about 30 minutes or longer to bake the substrate, such that the polymeric material in the trench regions becomes recessed below the insulating material of the field regions

(e) depositing a layer of additional material with a higher modulus than the polymeric material over the polymeric material in the trench regions and the filling material in the field regions; and

(f) polishing or etching the substrate to remove the additional material and filling material from the field regions of the substrate and to make the additional material in the trench regions substantially planar with or recessed below the insulating material of the field regions.

2. The method of claim 1, wherein the filling material is a high K dielectric material.

3. The method of claim 2, wherein the high K dielectric material is tantalum pentoxide.

4. The method of claim 1, wherein the filling material is a metal.

5. The method of claim 4, wherein the metal is a transition metal or a Group IIIA metal, as represented in the periodic table.

6. The method of claim 5, wherein the metal is selected from the group consisting of copper, aluminum, tantalum, titanium, tungsten, gold, platinum, iridium, ruthenium, cobalt, nickel, chromium, and mixtures thereof.

7. The method of claim 6, wherein the metal is platinum.

8. The method of claim 1, wherein the polymeric material comprises a photoresist, a polyimide, or a mixture thereof.

9. The method of claim 8, wherein the polymeric material comprises a photoresist.

10. The method of claim 1, wherein smearing of the filling material in the trench regions is substantially reduced during polishing.

11. The method of claim 10, wherein smearing of the filling material in the trench regions is eliminated during polishing.

12. The method of claim 1, wherein the layer of additional material comprises a spin on glass, silicon dioxide, or a mixture thereof.

13. The method of claim 12, wherein the layer of additional material comprises a spin on glass.

14. The method of claim 1, wherein the method further comprises, after step (f),

(g) etching the substrate with an etchant such that the layer of additional material is removed, and

(h) ashing the substrate such that the polymeric material in the trench regions is removed.

15. The method of claim 14, wherein the etchant is selected from the group consisting of sodium salts, potassium salts, ammonium salts, quaternary ammonium salts, peroxides, chlorates, perchlorates, permanganates, persulfates, fluorides, and mixtures thereof.

16. The method of claim 15, wherein the etchant is a fluoride.

17. The method of claim 16, wherein the etchant is hydrogen fluoride.