Method of fabricating a magneto-resistive random access memory (MRAM) device
First Claim
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1. A method of plasma etching metal layers, comprising:
- (a) providing a substrate having a patterned mask formed on a plurality of metal layers thereon, (b) generating a first plasma comprising a first gas mixture;
(c) etching a first metal layer of the plurality of metal layers using the first plasma, wherein metallic residue is formed on the substrate; and
(d) replacing the first plasma with a second plasma comprising an inert gas;
wherein exposure of the substrate to the second plasma removes the metallic residue formed on the substrate.
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Abstract
A method of etching a multi-layer magnetic stack (e.g., layers of cobalt-iron alloy (CoFe), ruthenium (Ru), platinum-manganese alloy (PtMn), and the like) of a magneto-resistive random access memory (MRAM) device is disclosed. Each layer of the multi-layer magnetic stack is etched using a process sequence including a plasma etch step followed by a plasma treatment step. The plasma treatment step uses a plasma comprising an inert gas to remove residues formed during the plasma etch step.
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Citations
15 Claims
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1. A method of plasma etching metal layers, comprising:
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(a) providing a substrate having a patterned mask formed on a plurality of metal layers thereon, (b) generating a first plasma comprising a first gas mixture;
(c) etching a first metal layer of the plurality of metal layers using the first plasma, wherein metallic residue is formed on the substrate; and
(d) replacing the first plasma with a second plasma comprising an inert gas;
wherein exposure of the substrate to the second plasma removes the metallic residue formed on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A computer-readable medium containing software that when executed by a computer causes a semiconductor wafer processing system to etch a material layer on a substrate using a method, comprising:
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(a) providing a substrate having a patterned mask formed on a plurality of metal layers thereon, (b) generating a first plasma comprising a first gas mixture;
(c) etching a first metal layer of the plurality of metal layers using the first plasma, wherein metallic residue is formed on the substrate; and
(d) replacing the first plasma with a second plasma comprising an inert gas, wherein exposure of the substrate to the second plasma removes the metallic residue formed on the substrate. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification