Film bulk acoustic resonator (FBAR) device

• US 6,842,089 B2
• Filed: 12/26/2002
• Issued: 01/11/2005
• Est. Priority Date: 05/21/2002
• Status: Expired due to Term

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Lee, Joo Ho
• Primary Examiner(s): Summons, Barbara
• Application Number:
  US10/327,929
• Publication Number:
  US 20030218518A1
• Time in Patent Office: 747 Days
• Field of Search: 333193-196, 333/133, 310/324, 310/349
• US Class Current: 333/189
• CPC Class Codes: H03H 2003/0442 of a non-piezoelectric layer
• CPC Class Codes: H03H 3/04 for obtaining desired frequency or temperature coefficient
• CPC Class Codes: H03H 9/587 Air-gaps
• CPC Class Codes: H03H 9/605 consisting of a ladder configuration
• CPC Class Codes: Y10T 29/42 Piezoelectric device making

Abstract

Disclosed are a film bulk acoustic resonator (FBAR) device and a method for fabricating the film bulk acoustic resonator (FBAR) device. The film bulk acoustic resonator (FBAR) device comprises a membrane layer having a plurality of active regions and provides different resonant frequencies by providing different thicknesses of the active regions of series resonators and shunt resonators, and by controlling the thicknesses, respectively. A plurality of the film bulk acoustic resonator (FBAR) devices having different resonant frequencies are manufactured on a substrate, thereby simultaneously manufacturing a transmission filter and a reception filter on the same substrate. Further, the film bulk acoustic resonator (FBAR) device has a stable structure and excellent characteristics.

Claims

1. A film bulk acoustic resonator (FBAR) device, which is applied to a ladder type filter comprising a plurality of series resonators and a plurality of shunt resonators, said FBAR comprising:

a substrate;

an insulating layer formed on the substrate;

a membrane support layer being formed on the insulating layer and comprising a plurality of air-gaps;

a membrane layer being formed on the membrane support layer and comprising a plurality of active regions to correspond to the air-gaps;

a plurality of lower electrodes, each being formed on the active region;

a plurality of piezoelectric layers, each being formed on the lower electrode; and

a plurality of upper electrodes, each being formed on the piezoelectric layer,

wherein a thickness of the active region corresponding to the series resonator differs from a thickness of the active region corresponding to the shunt resonator.

2. The film bulk acoustic resonator (FBAR) device as set forth in claim 1, wherein the thicknesses of the active regions of the membrane layer are the same as or less than that of other regions of the membrane layer.

3. The film bulk acoustic resonator (FBAR) device as set forth in claim 2, center frequencies of the series resonators and the shunt resonators are controlled by adjusting the thicknesses of the active regions of the membrane layer.

4. The film bulk acoustic resonator (FBAR) device as set forth in claim 2, wherein the thicknesses of the active regions of the membrane layer are in a range of 0.0˜

1.0 μ

m.

5. The film bulk acoustic resonator (FBAR) device as set forth in claim 1, wherein the active regions of the membrane layer have subsided upper surfaces.

6. The film bulk acoustic resonator (FBAR) device as set forth in claim 5, wherein said subsided upper surfaces of the active regions are formed by an etching process.

7. A film bulk acoustic resonator (FBAR) device, which is applied to a ladder type filter comprising a plurality of series resonators and a plurality of shunt resonators, said FBAR comprising:

a substrate;

an insulating layer formed on the substrate;

a membrane support layer being formed on the insulating layer and comprising a plurality of air-gaps;

a membrane layer being formed on the membrane support layer and comprising a plurality of active regions to correspond to the air-gaps;

a plurality of lower electrodes, each being formed on the active region;

a plurality of piezoelectric layers, each being formed on the lower electrode; and

a plurality of upper electrodes, each being formed on the piezoelectric layer,

wherein a thickness of the active region corresponding to the series resonator differs from a thickness of the active region corresponding to the shunt resonator, and center frequencies of the series resonators and the shunt resonators are controlled by adjusting the thicknesses of the active regions of the membrane layer.