Imprint lithography template comprising alignment marks

• US 6,842,229 B2
• Filed: 12/29/2003
• Issued: 01/11/2005
• Est. Priority Date: 07/16/2000
• Status: Expired due to Term

• Current Assignee: Board of Regents of the University of Texas System (University of Texas System)
• Original Assignee: Board of Regents of the University of Texas System (University of Texas System)
• Inventors: Sreenivasan, Sidlgata V., Choi, Byung J., Bailey, Todd, Colburn, Matthew
• Primary Examiner(s): Kim, Peter B.
• Application Number:
  US10/747,795
• Publication Number:
  US 20040141168A1
• Time in Patent Office: 379 Days
• Field of Search: 355/75, 355/53, 355/72, 356/399, 356/400, 356/401, 430/22, 430/30, 430/322
• US Class Current: 355/75
• CPC Class Codes: B29C 2035/0827 using UV radiation
• CPC Class Codes: B29C 2043/025 forming a microstructure, i.e. fine patterning
• CPC Class Codes: B29C 35/0888 using transparant moulds
• CPC Class Codes: B29C 37/005 Compensating volume or shape change during moulding, in general
• CPC Class Codes: B29C 37/0053 Moulding articles characterised by the shape of the surface, e.g. ribs, high polish mould construction therefor B29C33/42; surface shaping of articles B29C59/00; by incorporating filler in or near the surface B29C70/64
• CPC Class Codes: B29C 43/003 characterised by the choice of material
• CPC Class Codes: B29C 43/021 characterised by the shape of the surface
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: G03F 9/00 Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically G03F7/22 takes precedence; preparation of photographic masks G03F1/00; within photographic printing apparatus for making copies G03B27/00
• CPC Class Codes: Y10S 101/36 Means for registering or alignment of print plates on print press structure
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

A system of determining and correcting alignment during imprint lithography process is described. During an imprint lithographic process the template may be aligned with the substrate by the use of alignment marks disposed on both the template and substrate. The alignment may be determined and corrected for before the layer is processed.

Claims

1. An imprint lithography template, said template comprising:

template alignment marks that are substantially transparent to a first flux of light and that produce an analyzable mark in response to a second flux of light with said first flux of light differing from said second flux of light.

2. The template as recited in claim 1, wherein said first flux of light includes ultraviolet light.

3. The template as recited in claim 1, wherein said second flux of light includes visible light.

4. The template as recited in claim 1, wherein said template alignment marks comprise SiO_x with x less than 2.

5. The template as recited in claim 1, wherein said template alignment marks comprise SiO_x with x approximately 1.5.

6. The template as recited in claim 1, wherein said template is substantially transparent to said first flux of light.

7. The template as recited in claim 1, wherein said template is substantially transparent to said second flux of light.

8. An imprint lithography template, said template comprising:

template alignment marks, with said template substantially transparent to a first flux of light and said template alignment marks producing an analyzable mark in response to a second flux of light with said first flux of light differing from said second flux of light.

9. The template as recited in claim 8, wherein said first flux of light includes ultraviolet light.

10. The template as recited in claim 8, wherein said second flux of light includes visible light.

11. The template as recited in claim 8, wherein said template alignment marks comprise SiO_x with x less than 2.

12. The template as recited in claim 8, wherein said template alignment marks comprise SiO_x with x approximately 1.5.

13. The template as recited in claim 8, wherein said template is substantially transparent to said second flux of light.

14. The template as recited in claim 8, wherein said template alignment marks are substantially transparent to said first flux of light.

15. An imprint lithography template, said template comprising:

template alignment marks that are substantially transparent to ultraviolet light and that produce an analyzable mark in response to visible light.

16. The template as recited in claim 15, wherein said template alignment marks comprise SiO_x with x less than 2.

17. The template as recited in claim 15, wherein said template alignment marks comprise SiO_x with x approximately 1.5.

18. The template as recited in claim 15, wherein said template is substantially transparent to said first flux of light.

19. The template as recited in claim 15, wherein said template is substantially transparent to said second flux of light.