Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device fabrication

• US 6,842,657 B1
• Filed: 07/21/2000
• Issued: 01/11/2005
• Est. Priority Date: 04/09/1999
• Status: Expired due to Fees

• Current Assignee: E Ink Corporation (E Ink Holdings Incorporated)
• Original Assignee: E Ink Corporation (E Ink Holdings Incorporated)
• Inventors: Drzaic, Paul S., Wang, Jianna
• Primary Examiner(s): Picard, Leo
• Assistant Examiner(s): Rapp, Chad
• Application Number:
  US09/621,000
• Time in Patent Office: 1,635 Days
• Field of Search: 700119-121, 700/123, 700/124, 700/125, 700/117, 700/118, 438/99, 438/499, 257/17, 257/40, 257/24, 345/87, 345/92, 345/107, 430/20
• US Class Current: 700/120
• CPC Class Codes: G02F 1/1334 based on polymer dispersed liquid crystals, e.g. microencapsulated liquid crystals
• CPC Class Codes: G02F 1/1345 Conductors connecting electrodes to cell terminals
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/468 characterised by the gate dielectrics
• CPC Class Codes: H10K 10/481 characterised by the gate conductors
• CPC Class Codes: H10K 71/10 Deposition of organic active material
• CPC Class Codes: H10K 71/211 by selective transformation of an existing layer

Abstract

In one embodiment of the invention, a method of manufacturing a semiconductor device comprises the steps of: a) providing an organic semiconductor layer; b) depositing a reactive species on a portion of the organic semiconductor layer; and c) reacting the reactive species with the portion of the organic layer to form a dielectric layer.

Claims

1. A method of manufacturing a semiconductor device comprising the steps of:

a) providing an organic semiconductor layer;

b) depositing a reactive species on a portion of the organic semiconductor layer; and

c) reacting the reactive species with the portion of the organic layer to form a dielectric layer.

2. The method of claim 1 wherein reacting comprises one of oxidizing, reducing or isomerizing.

3. The method of claim 1 wherein the dielectric layer is a gate dielectric layer.

4. The method of claim 3 wherein step a) further comprises the steps of a1) providing a gate electrode and a2) providing the reactive species on the gate electrode.

5. The method of claim 1 wherein the reactive species comprises one of a liquid, a solid, or a suspension.

6. The method of claim 1 wherein the dielectric layer comprises an insulating layer of a thin film transistor.

7. The method of claim 1 wherein the semiconductor device is part of a circuit for addressing an electronic display.