Methods of forming semiconductor constructions
First Claim
1. A method of forming a semiconductor construction, comprising:
- forming a first semiconductor substrate comprising a first monocrystalline base and having a first transistor supported on the first monocrystalline base;
the first transistor having source/drain regions associated therewith;
the first substrate also having an insulative material formed over the base and semiconductor-material-containing plugs extending through the insulative material and to the source/drain regions;
the semiconductor-material-containing plugs being separated from one another by the insulative material and defining a planarized upper surface above the first monocrystalline base;
providing a second semiconductor substrate comprising a second monocrystalline base and bonding the second semiconductor substrate to the semiconductor-material-containing plugs at the planarized upper surface above the first monocrystalline base; and
forming a second transistor supported over the second substrate.
7 Assignments
0 Petitions
Accused Products
Abstract
The invention includes a method of forming a semiconductor construction. A first substrate is provided which comprises silicon-containing structures separated from one another by an insulative material. The silicon-containing structures define an upper surface. A second semiconductor substrate is provided which comprises a monocrystalline material having a damage region therein. The second semiconductor substrate is bonded to the silicon-containing structures of the first substrate at the upper surface. The monocrystalline material is then cleaved along the damage region. The invention also encompasses a semiconductor construction comprising a first substrate having silicon-containing structures separated from one another by an insulative material, and a second substrate comprising a monocrystalline material. The silicon-containing structures of the first substrate define an upper surface, and the monocrystalline material of the second substrate is bonded over the silicon-containing structures at the upper surface.
240 Citations
16 Claims
-
1. A method of forming a semiconductor construction, comprising:
-
forming a first semiconductor substrate comprising a first monocrystalline base and having a first transistor supported on the first monocrystalline base;
the first transistor having source/drain regions associated therewith;
the first substrate also having an insulative material formed over the base and semiconductor-material-containing plugs extending through the insulative material and to the source/drain regions;
the semiconductor-material-containing plugs being separated from one another by the insulative material and defining a planarized upper surface above the first monocrystalline base;
providing a second semiconductor substrate comprising a second monocrystalline base and bonding the second semiconductor substrate to the semiconductor-material-containing plugs at the planarized upper surface above the first monocrystalline base; and
forming a second transistor supported over the second substrate. - View Dependent Claims (2, 3, 4)
-
-
5. A method of forming a semiconductor construction, comprising:
-
forming a first substrate comprising semiconductor-material-containing structures separated from one another by an insulative material;
the semiconductor-material-containing structures defining an upper surface;
bonding a second semiconductor substrate to the semiconductor-material-containing structures at the upper surface;
the second semiconductor substrate comprising a monocrystalline material which is bonded to the semiconductor-material-containing structures; and
forming at least one doped semiconductor-material-containing region extending through the monocrystalline material and electrically contacting at least one of the semiconductor-material-containing structures. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
-
Specification