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Selective refractory metal and nitride capping

  • US 6,844,258 B1
  • Filed: 05/09/2003
  • Issued: 01/18/2005
  • Est. Priority Date: 05/09/2003
  • Status: Active Grant
First Claim
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1. A method of forming a capping layer on copper lines of a semiconductor device, the method comprising:

  • (a) providing a partially fabricated semiconductor device having a surface comprising exposed surfaces of the copper lines and dielectric around the copper lines, (b) creating a nucleation refractory metal layer over at least the exposed surfaces of the copper lines;

    (c) depositing a bulk refractory metal layer over at least the nucleation refractory metal layer created in (b); and

    (d) nitriding at least an upper portion of the bulk refractory metal layer deposited in (c) to form a refractory metal nitride layer effective for reducing electromigration of the copper line and for blocking diffusion of copper from the copper conductive lines.

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