Fabrication method of nitride-based semiconductors and nitride-based semiconductor fabricated thereby
First Claim
1. A fabrication method of nitride-based semiconductors comprising the following steps of:
- (a) forming a self-organizing metal layer on a sapphire substrate;
(b) heating the sapphire substrate having the self-organizing metal layer so that self-organizing metal coalesces into nanoscale clusters to irregularly expose an upper surface of the sapphire substrate;
(c) plasma etching exposed portions of the sapphire substrate using the self-organized metal clusters as a mask to form a nanoscale uneven structure on the sapphire substrate; and
(d) wet etching a resultant structure to remove the self-organized metal clusters.
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Abstract
The present invention relates to a fabrication method of nitride-based semiconductors and a nitride-based semiconductor fabricated thereby. In the fabrication method of the invention, a self-organizing metal layer is formed on a sapphire substrate. The sapphire substrate having the self-organizing metal layer is heated so that self-organizing metal coalesces into nanoscale clusters to irregularly expose an upper surface of the sapphire substrate. Exposed portions of the sapphire substrate is plasma etched using the self-organized metal clusters as a mask to form a nanoscale uneven structure on the sapphire substrate. A resultant structure is wet etched to remove the self-organized metal clusters. The nanoscale uneven structure formed on the sapphire substrate decreases the stress and resultant dislocation between the sapphire substrate and a nitride-based semiconductor layer as well as increases the quantum efficiency between the same.
68 Citations
21 Claims
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1. A fabrication method of nitride-based semiconductors comprising the following steps of:
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(a) forming a self-organizing metal layer on a sapphire substrate;
(b) heating the sapphire substrate having the self-organizing metal layer so that self-organizing metal coalesces into nanoscale clusters to irregularly expose an upper surface of the sapphire substrate;
(c) plasma etching exposed portions of the sapphire substrate using the self-organized metal clusters as a mask to form a nanoscale uneven structure on the sapphire substrate; and
(d) wet etching a resultant structure to remove the self-organized metal clusters. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A nitride-based semiconductor for use with a light emitting diode comprising:
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a sapphire substrate;
a nitride nucleation layer, an n-doped GaN layer, an activation layer and a p-doped GaN layer formed in their order on the sapphire substrate; and
an uneven structure of irregular-shaped pores formed on the sapphire substrate, wherein the pores have a width of about 50 to 500 nm and a depth of about 3 to 50 nm. - View Dependent Claims (21)
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Specification